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Class Information
Number: 257/76
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Specified wide band gap (1.5ev) semiconductor material other than gaasp or gaalas
Description: Subject matter including a semiconductor material with a band gap (between its valance and conduction bands) greater that 1.5 electron volts which is not gallium arsenide phosphide or gallium aluminum arsenide.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 5831286 |
High mobility p-type transition metal tri-antimonide and related skutterudite compounds and alloys for power semiconducting devices |
Nov. 3, 1998 |
| 5831287 |
Bipolar semiconductor device having semiconductor layers of SiC and a method for producing a semiconductor device of SiC |
Nov. 3, 1998 |
| 5807765 |
Processing of Sb-based lasers |
Sep. 15, 1998 |
| 5796122 |
Method for planarizing wide bandgap semiconductor devices |
Aug. 18, 1998 |
| 5793109 |
Structure of ohmic electrode for semiconductor by atomic layer doping |
Aug. 11, 1998 |
| 5789764 |
Antifuse with improved antifuse material |
Aug. 4, 1998 |
| 5777350 |
Nitride semiconductor light-emitting device |
Jul. 7, 1998 |
| 5776323 |
Diamond electrode |
Jul. 7, 1998 |
| 5770887 |
Gan single crystal |
Jun. 23, 1998 |
| 5767540 |
Hetero-junction bipolar transistor having AlGaAsP emitter layer underneath a base electrode |
Jun. 16, 1998 |
| 5767581 |
Gallium nitride-based III-V group compound semiconductor |
Jun. 16, 1998 |
| 5764673 |
Semiconductor light emitting device |
Jun. 9, 1998 |
| 5751013 |
Semiconductor light-emitting device and production method thereof |
May. 12, 1998 |
| 5744822 |
Semiconductor device/circuit having at least partially crystallized semiconductor layer |
Apr. 28, 1998 |
| 5726462 |
Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer |
Mar. 10, 1998 |
| 5726463 |
Silicon carbide MOSFET having self-aligned gate structure |
Mar. 10, 1998 |
| 5698888 |
Compound semiconductor field effect transistor free from piezoelectric effects regardless of orientation of gate electrode |
Dec. 16, 1997 |
| 5670798 |
Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same |
Sep. 23, 1997 |
| 5663595 |
Diamond heat sink comprising synthetic diamond film |
Sep. 2, 1997 |
| 5656828 |
Electronic component with a semiconductor composite structure |
Aug. 12, 1997 |
| 5656827 |
Chemical sensor utilizing a chemically sensitive electrode in combination with thin diamond layers |
Aug. 12, 1997 |
| 5652434 |
Gallium nitride-based III-V group compound semiconductor |
Jul. 29, 1997 |
| 5652551 |
Method for high frequency device operation with high temperature and radiation hard characteristics |
Jul. 29, 1997 |
| 5641975 |
Aluminum gallium nitride based heterojunction bipolar transistor |
Jun. 24, 1997 |
| 5625202 |
Modified wurtzite structure oxide compounds as substrates for III-V nitride compound semiconductor epitaxial thin film growth |
Apr. 29, 1997 |
| 5610410 |
III-V compound semiconductor device with Schottky electrode of increased barrier height |
Mar. 11, 1997 |
| 5569932 |
Porous silicon carbide (SIC) semiconductor device |
Oct. 29, 1996 |
| 5563422 |
Gallium nitride-based III-V group compound semiconductor device and method of producing the same |
Oct. 8, 1996 |
| 5541423 |
Monocrystalline diamond semiconductor device and several electronic components employing same |
Jul. 30, 1996 |
| 5536952 |
Heterojunction bipolar transistor |
Jul. 16, 1996 |
| 5536953 |
Wide bandgap semiconductor device including lightly doped active region |
Jul. 16, 1996 |
| 5530267 |
Article comprising heteroepitaxial III-V nitride semiconductor material on a substrate |
Jun. 25, 1996 |
| 5510631 |
Non-monocrystalline silicon carbide semiconductor and semiconductor device employing the same |
Apr. 23, 1996 |
| 5479028 |
III-V system compound semiconductor device and method for manufacturing the semiconductor device |
Dec. 26, 1995 |
| 5455432 |
Diamond semiconductor device with carbide interlayer |
Oct. 3, 1995 |
| 5453628 |
Microelectronic diamond capacitive transducer |
Sep. 26, 1995 |
| 5432357 |
Diamond film electronic devices |
Jul. 11, 1995 |
| 5422500 |
Ohmic contact electrodes for N-type semiconductor cubic boron nitride |
Jun. 6, 1995 |
| 5416342 |
Blue light-emitting diode with high external quantum efficiency |
May. 16, 1995 |
| 5414279 |
cBN semiconductor device having an ohmic electrode and a method of making the same |
May. 9, 1995 |
| 5408120 |
Light-emitting device of gallium nitride compound semiconductor |
Apr. 18, 1995 |
| 5391895 |
Double diamond mesa vertical field effect transistor |
Feb. 21, 1995 |
| 5382812 |
Diamond and II-VI heterojunction semiconductor light emitting device |
Jan. 17, 1995 |
| 5382822 |
Metal-insulator semiconductor field-effect transistor |
Jan. 17, 1995 |
| 5378921 |
Heterojunction multicollector transistor |
Jan. 3, 1995 |
| 5373172 |
Semiconducting diamond light-emitting element |
Dec. 13, 1994 |
| 5365477 |
Dynamic random access memory device |
Nov. 15, 1994 |
| 5363395 |
Blue-green injection laser structure utilizing II-VI compounds |
Nov. 8, 1994 |
| 5362975 |
Diamond-based chemical sensors |
Nov. 8, 1994 |
| 5352908 |
Diamond Schottky diode with oxygen |
Oct. 4, 1994 |
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