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Class Information
Number: 257/76
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Specified wide band gap (1.5ev) semiconductor material other than gaasp or gaalas
Description: Subject matter including a semiconductor material with a band gap (between its valance and conduction bands) greater that 1.5 electron volts which is not gallium arsenide phosphide or gallium aluminum arsenide.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 6265289 |
Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby |
Jul. 24, 2001 |
| 6255198 |
Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby |
Jul. 3, 2001 |
| 6252261 |
GaN crystal film, a group III element nitride semiconductor wafer and a manufacturing process therefor |
Jun. 26, 2001 |
| 6246077 |
Semiconductor device |
Jun. 12, 2001 |
| 6225672 |
High-gain and high-temperature applicable phototransistor with multiple mono-crystalline silicon-carbide layers on a silicon substrate |
May. 1, 2001 |
| 6221788 |
Semiconductor and a method for manufacturing an oxide film on the surface of a semiconductor substrate |
Apr. 24, 2001 |
| 6218771 |
Group III nitride field emitters |
Apr. 17, 2001 |
| 6188137 |
Ohmic electrode structure, semiconductor device including such ohmic electrode structure, and method for producing such semiconductor device |
Feb. 13, 2001 |
| 6180956 |
Thin film transistors with organic-inorganic hybrid materials as semiconducting channels |
Jan. 30, 2001 |
| 6177292 |
Method for forming GaN semiconductor single crystal substrate and GaN diode with the substrate |
Jan. 23, 2001 |
| 6177688 |
Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates |
Jan. 23, 2001 |
| 6177685 |
Nitride-type III-V HEMT having an InN 2DEG channel layer |
Jan. 23, 2001 |
| 6153894 |
Group-III nitride semiconductor light-emitting device |
Nov. 28, 2000 |
| 6147364 |
Compound semiconductor device formed of nitrogen-containing gallium compound such as gan, algan or ingan |
Nov. 14, 2000 |
| 6147363 |
Nitride semiconductor light-emitting device and manufacturing method of the same |
Nov. 14, 2000 |
| 6133618 |
Semiconductor device having an anti-reflective layer and a method of manufacture thereof |
Oct. 17, 2000 |
| 6111275 |
Gallium nitride group compound semiconductor light-emitting device and method for fabricating the same |
Aug. 29, 2000 |
| 6093952 |
Higher power gallium nitride schottky rectifier |
Jul. 25, 2000 |
| 6093965 |
Gallium nitride-based III-V group compound semiconductor |
Jul. 25, 2000 |
| 6091081 |
Insulating film comprising amorphous carbon fluoride, a semiconductor device comprising such an insulating film |
Jul. 18, 2000 |
| 6091083 |
Gallium nitride type compound semiconductor light-emitting device having buffer layer with non-flat surface |
Jul. 18, 2000 |
| RE36747 |
Light-emitting device of gallium nitride compound semiconductor |
Jun. 27, 2000 |
| 6072198 |
Electroluminescent alkaline-earth sulfide phosphor thin films with multiple coactivator dopants |
Jun. 6, 2000 |
| 6072196 |
semiconductor light emitting devices |
Jun. 6, 2000 |
| 6064078 |
Formation of group III-V nitride films on sapphire substrates with reduced dislocation densities |
May. 16, 2000 |
| 6051849 |
Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer |
Apr. 18, 2000 |
| 6043514 |
Group III-V type nitride semiconductor device |
Mar. 28, 2000 |
| 6030849 |
Methods of manufacturing semiconductor, semiconductor device and semiconductor substrate |
Feb. 29, 2000 |
| 6025609 |
Laser synthesized ceramic electronic devices and circuits and method for making |
Feb. 15, 2000 |
| 6020600 |
Silicon carbide semiconductor device with trench |
Feb. 1, 2000 |
| 6011278 |
Lateral silicon carbide semiconductor device having a drift region with a varying doping level |
Jan. 4, 2000 |
| 6005263 |
Light emitter with lowered heterojunction interface barrier |
Dec. 21, 1999 |
| 5990531 |
Methods of making high voltage GaN-AlN based semiconductor devices and semiconductor devices made |
Nov. 23, 1999 |
| 5990551 |
Bonding of silicon carbide chip with a semiconductor |
Nov. 23, 1999 |
| 5969414 |
Semiconductor package with molded plastic body |
Oct. 19, 1999 |
| 5932894 |
SiC semiconductor device comprising a pn junction |
Aug. 3, 1999 |
| 5925897 |
Optoelectronic semiconductor diodes and devices comprising same |
Jul. 20, 1999 |
| 5923058 |
Aluminum gallium nitride heterojunction bipolar transistor |
Jul. 13, 1999 |
| 5920086 |
Light emitting device |
Jul. 6, 1999 |
| 5912477 |
High efficiency light emitting diodes |
Jun. 15, 1999 |
| 5905275 |
Gallium nitride compound semiconductor light-emitting device |
May. 18, 1999 |
| 5903017 |
Compound semiconductor device formed of nitrogen-containing gallium compound such as GaN, AlGaN or InGaN |
May. 11, 1999 |
| 5900647 |
Semiconductor device with SiC and GaAlInN |
May. 4, 1999 |
| 5900648 |
Semiconductor device having an insulated gate |
May. 4, 1999 |
| 5886367 |
Epitaxial wafer device including an active layer having a two-phase structure and light-emitting device using the wafer |
Mar. 23, 1999 |
| 5880485 |
Semiconductor device including Gallium nitride layer |
Mar. 9, 1999 |
| 5877558 |
Gallium nitride-based III-V group compound semiconductor |
Mar. 2, 1999 |
| 5877516 |
Bonding of silicon carbide directly to a semiconductor substrate by using silicon to silicon bonding |
Mar. 2, 1999 |
| 5877515 |
SiC semiconductor device |
Mar. 2, 1999 |
| 5838029 |
GaN-type light emitting device formed on a silicon substrate |
Nov. 17, 1998 |
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