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Class Information
Number: 257/76
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Specified wide band gap (1.5ev) semiconductor material other than gaasp or gaalas
Description: Subject matter including a semiconductor material with a band gap (between its valance and conduction bands) greater that 1.5 electron volts which is not gallium arsenide phosphide or gallium aluminum arsenide.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 6856005 |
Semiconductor device having a nitride-based hetero-structure and method of manufacturing the same |
Feb. 15, 2005 |
| 6835966 |
Method for manufacturing gallium nitride compound semiconductor |
Dec. 28, 2004 |
| 6833562 |
Silicon carbide semiconductor device and its manufacturing method |
Dec. 21, 2004 |
| 6825505 |
Phase-shifted distributed feedback type semiconductor laser diode capable of improving wavelength chirping and external reflection return light characteristics |
Nov. 30, 2004 |
| 6818926 |
Method for manufacturing gallium nitride compound semiconductor |
Nov. 16, 2004 |
| 6803602 |
Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures |
Oct. 12, 2004 |
| 6768135 |
Dual process semiconductor heterostructures |
Jul. 27, 2004 |
| 6767769 |
Metal-to-metal antifuse employing carbon-containing antifuse material |
Jul. 27, 2004 |
| 6765291 |
IC package with dual heat spreaders |
Jul. 20, 2004 |
| 6762435 |
Semiconductor device with boron containing carbon doped silicon oxide layer |
Jul. 13, 2004 |
| 6750480 |
Bipolar transistor with lattice matched base layer |
Jun. 15, 2004 |
| 6680489 |
Amorphous silicon carbide thin film coating |
Jan. 20, 2004 |
| 6674103 |
HBT with nitrogen-containing current blocking base collector interface and method for current blocking |
Jan. 6, 2004 |
| 6657518 |
Notch filter circuit apparatus |
Dec. 2, 2003 |
| 6657232 |
Defect reduction in GaN and related materials |
Dec. 2, 2003 |
| 6653658 |
Semiconductor wafers with integrated heat spreading layer |
Nov. 25, 2003 |
| 6639925 |
Optical information processing equipment and semiconductor light emitting device suitable therefor |
Oct. 28, 2003 |
| 6633056 |
Hetero-integration of dissimilar semiconductor materials |
Oct. 14, 2003 |
| 6614095 |
Diamond component with rear side contact and a method for the production thereof |
Sep. 2, 2003 |
| 6611004 |
Gallium nitride based light emitting element |
Aug. 26, 2003 |
| 6610999 |
Multiple stage high power diode |
Aug. 26, 2003 |
| 6608327 |
Gallium nitride semiconductor structure including laterally offset patterned layers |
Aug. 19, 2003 |
| 6597023 |
Semiconductor light-detecting element |
Jul. 22, 2003 |
| 6580098 |
Method for manufacturing gallium nitride compound semiconductor |
Jun. 17, 2003 |
| 6580096 |
Window for light-emitting diode |
Jun. 17, 2003 |
| 6573530 |
Multiple quantum well optoelectronic devices |
Jun. 3, 2003 |
| 6573534 |
Silicon carbide semiconductor device |
Jun. 3, 2003 |
| 6559467 |
P-n heterojunction-based structures utilizing HVPE grown III-V compound layers |
May. 6, 2003 |
| 6534791 |
Epitaxial aluminium-gallium nitride semiconductor substrate |
Mar. 18, 2003 |
| 6533874 |
GaN-based devices using thick (Ga, Al, In)N base layers |
Mar. 18, 2003 |
| 6534790 |
Compound semiconductor field effect transistor |
Mar. 18, 2003 |
| 6524932 |
Method of fabricating group-III nitride-based semiconductor device |
Feb. 25, 2003 |
| 6518637 |
Cubic (zinc-blende) aluminum nitride |
Feb. 11, 2003 |
| 6515303 |
Method of forming vias in silicon carbide and resulting devices and circuits |
Feb. 4, 2003 |
| 6495385 |
Hetero-integration of dissimilar semiconductor materials |
Dec. 17, 2002 |
| 6462355 |
Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates |
Oct. 8, 2002 |
| 6459098 |
Window for light emitting diode |
Oct. 1, 2002 |
| 6445006 |
Microelectronic and microelectromechanical devices comprising carbon nanotube components, and methods of making same |
Sep. 3, 2002 |
| 6433364 |
Semiconductor light emitting device capable of increasing light emitting efficiency |
Aug. 13, 2002 |
| 6373076 |
Passivated silicon carbide devices with low leakage current and method of fabricating |
Apr. 16, 2002 |
| 6365918 |
Method and device for interconnected radio frequency power SiC field effect transistors |
Apr. 2, 2002 |
| 6362494 |
Semiconductor device and method and apparatus for manufacturing semiconductor device |
Mar. 26, 2002 |
| 6355874 |
Semiconductor device and solar cell |
Mar. 12, 2002 |
| 6350666 |
Method and apparatus for producing group-III nitrides |
Feb. 26, 2002 |
| 6342411 |
Electronic component and method for manufacture |
Jan. 29, 2002 |
| 6339030 |
Fabrication of photonic band gap materials |
Jan. 15, 2002 |
| 6297521 |
Graded anti-reflective coating for IC lithography |
Oct. 2, 2001 |
| 6291838 |
Gas sensing diode comprising SiC |
Sep. 18, 2001 |
| 6288417 |
Light-emitting devices including polycrystalline gan layers and method of forming devices |
Sep. 11, 2001 |
| 6287889 |
Diamond thin film or the like, method for forming and modifying the thin film, and method for processing the thin film |
Sep. 11, 2001 |
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