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Class Information
Number: 257/76
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Specified wide band gap (1.5ev) semiconductor material other than gaasp or gaalas
Description: Subject matter including a semiconductor material with a band gap (between its valance and conduction bands) greater that 1.5 electron volts which is not gallium arsenide phosphide or gallium aluminum arsenide.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7432531 |
Semiconductor device |
Oct. 7, 2008 |
| 7378684 |
Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates |
May. 27, 2008 |
| 7372078 |
Vertical gallium-nitride based light emitting diode |
May. 13, 2008 |
| 7309959 |
Light-emitting device with improved brightness control and narrow frame and electronic apparatus with the light-emitting device |
Dec. 18, 2007 |
| 7274040 |
Contact and omnidirectional reflective mirror for flip chipped light emitting devices |
Sep. 25, 2007 |
| 7271416 |
Strain compensated semiconductor structures |
Sep. 18, 2007 |
| 7265388 |
Semiconductor device |
Sep. 4, 2007 |
| 7250630 |
Electronic devices formed of high-purity molybdenum oxide |
Jul. 31, 2007 |
| 7230273 |
Semiconductor device with a plurality of semiconductor elements each including a wide band-gap semiconductor |
Jun. 12, 2007 |
| 7227189 |
Vapor-phase growth method for a nitride semiconductor and a nitride semiconductor device |
Jun. 5, 2007 |
| 7220680 |
Method for photolithography in semiconductor manufacturing |
May. 22, 2007 |
| 7198970 |
Technique for perfecting the active regions of wide bandgap semiconductor nitride devices |
Apr. 3, 2007 |
| 7176497 |
Group III nitride compound semiconductor |
Feb. 13, 2007 |
| 7173285 |
Lithographic methods to reduce stacking fault nucleation sites |
Feb. 6, 2007 |
| 7170095 |
Semi-insulating GaN and method of making the same |
Jan. 30, 2007 |
| 7170096 |
Antimonide-based optical devices |
Jan. 30, 2007 |
| 7166865 |
Semiconductor light emitting device and method for manufacturing same |
Jan. 23, 2007 |
| 7138668 |
Heterojunction diode with reduced leakage current |
Nov. 21, 2006 |
| 7119400 |
Isotopically pure silicon-on-insulator wafers and method of making same |
Oct. 10, 2006 |
| 7105932 |
Power semiconductor module |
Sep. 12, 2006 |
| 7105875 |
Lateral power diodes |
Sep. 12, 2006 |
| 7075111 |
Nitride semiconductor substrate and its production method |
Jul. 11, 2006 |
| 7061024 |
Light-emitting device comprising an EU(II)-activated phosphor |
Jun. 13, 2006 |
| 7053548 |
Light-emitting device with improved brightness control and narrow frame and electronic apparatus with the light-emitting device |
May. 30, 2006 |
| 7048872 |
Codoped direct-gap semiconductor scintillators |
May. 23, 2006 |
| 7030417 |
Semiconductor light emitting device and fabrication method thereof |
Apr. 18, 2006 |
| 7026669 |
Lateral channel transistor |
Apr. 11, 2006 |
| 7023010 |
Si/C superlattice useful for semiconductor devices |
Apr. 4, 2006 |
| 7005678 |
Silicon carbide semiconductor device having junction field effect transistor and method for manufacturing the same |
Feb. 28, 2006 |
| 7002179 |
ZnO system semiconductor device |
Feb. 21, 2006 |
| 6998690 |
Gallium nitride based III-V group compound semiconductor device and method of producing the same |
Feb. 14, 2006 |
| 6998693 |
Chemical sensor using chemically induced electron-hole production at a schottky barrier |
Feb. 14, 2006 |
| 6992317 |
Full color display structures using pseudomorphic cladded quantum dot nanophosphor thin films |
Jan. 31, 2006 |
| 6982435 |
Group III nitride compound semiconductor device and method for producing the same |
Jan. 3, 2006 |
| 6965123 |
Transistor with variable electron affinity gate and methods of fabrication and use |
Nov. 15, 2005 |
| 6965156 |
Amorphous carbon metal-to-metal antifuse with adhesion promoting layers |
Nov. 15, 2005 |
| 6949769 |
Suppression of MOSFET gate leakage current |
Sep. 27, 2005 |
| 6946372 |
Method of manufacturing gallium nitride based semiconductor light emitting device |
Sep. 20, 2005 |
| 6936849 |
Silicon carbide gate transistor |
Aug. 30, 2005 |
| 6936863 |
Boron phosphide-based semiconductor light-emitting device, production method thereof and light-emitting diode |
Aug. 30, 2005 |
| 6933531 |
Heat sink material and method of manufacturing the heat sink material |
Aug. 23, 2005 |
| 6930329 |
Method for manufacturing gallium nitride compound semiconductor |
Aug. 16, 2005 |
| 6927417 |
Photoelectric conversion element and method of manufacturing the same |
Aug. 9, 2005 |
| 6927421 |
Heat sink material |
Aug. 9, 2005 |
| 6894346 |
Semiconductor device |
May. 17, 2005 |
| 6878962 |
Semiconductor device |
Apr. 12, 2005 |
| 6878976 |
Carbon-modulated breakdown voltage SiGe transistor for low voltage trigger ESD applications |
Apr. 12, 2005 |
| 6864517 |
Bipolar structure with two base-emitter junctions in the same circuit |
Mar. 8, 2005 |
| 6864510 |
Nitride semiconductor field effect transistor (FET) and method of fabricating the same |
Mar. 8, 2005 |
| 6856005 |
Semiconductor device having a nitride-based hetero-structure and method of manufacturing the same |
Feb. 15, 2005 |
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