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Class Information
Number: 257/76
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Specified wide band gap (1.5ev) semiconductor material other than gaasp or gaalas
Description: Subject matter including a semiconductor material with a band gap (between its valance and conduction bands) greater that 1.5 electron volts which is not gallium arsenide phosphide or gallium aluminum arsenide.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7619257 |
Devices including graphene layers epitaxially grown on single crystal substrates |
Nov. 17, 2009 |
| 7615787 |
Photo-semiconductor device and method of manufacturing the same |
Nov. 10, 2009 |
| 7615804 |
Superlattice nitride semiconductor LD device |
Nov. 10, 2009 |
| 7601985 |
Semiconductor light-emitting device |
Oct. 13, 2009 |
| 7601986 |
Epitaxial semiconductor structures having reduced stacking fault nucleation sites |
Oct. 13, 2009 |
| 7598520 |
Semiconductor device including active layer of zinc oxide with controlled crystal lattice spacing and manufacturing method thereof |
Oct. 6, 2009 |
| 7598576 |
Environmentally robust passivation structures for high-voltage silicon carbide semiconductor devices |
Oct. 6, 2009 |
| 7595507 |
Semiconductor devices having gallium nitride epilayers on diamond substrates |
Sep. 29, 2009 |
| 7573075 |
Compound semiconductor device, production method of compound semiconductor device and diode |
Aug. 11, 2009 |
| 7564061 |
Field effect transistor and production method thereof |
Jul. 21, 2009 |
| 7550821 |
Nitride semiconductor device |
Jun. 23, 2009 |
| 7544249 |
Large-diameter SiC wafer and manufacturing method thereof |
Jun. 9, 2009 |
| 7538352 |
Semiconductor device and power converter, driving inverter, general-purpose inverter and high-power high-frequency communication device using same |
May. 26, 2009 |
| 7538340 |
Low side emitting light source and method of making the same |
May. 26, 2009 |
| 7525122 |
Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides |
Apr. 28, 2009 |
| 7514349 |
Semiconductor optical device and manufacturing method thereof |
Apr. 7, 2009 |
| 7504679 |
Enhancement mode GaN FET with piezoelectric gate |
Mar. 17, 2009 |
| 7452814 |
Method of polishing GaN substrate |
Nov. 18, 2008 |
| 7432531 |
Semiconductor device |
Oct. 7, 2008 |
| 7378684 |
Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates |
May. 27, 2008 |
| 7372078 |
Vertical gallium-nitride based light emitting diode |
May. 13, 2008 |
| 7309959 |
Light-emitting device with improved brightness control and narrow frame and electronic apparatus with the light-emitting device |
Dec. 18, 2007 |
| 7274040 |
Contact and omnidirectional reflective mirror for flip chipped light emitting devices |
Sep. 25, 2007 |
| 7271416 |
Strain compensated semiconductor structures |
Sep. 18, 2007 |
| 7265388 |
Semiconductor device |
Sep. 4, 2007 |
| 7250630 |
Electronic devices formed of high-purity molybdenum oxide |
Jul. 31, 2007 |
| 7230273 |
Semiconductor device with a plurality of semiconductor elements each including a wide band-gap semiconductor |
Jun. 12, 2007 |
| 7227189 |
Vapor-phase growth method for a nitride semiconductor and a nitride semiconductor device |
Jun. 5, 2007 |
| 7220680 |
Method for photolithography in semiconductor manufacturing |
May. 22, 2007 |
| 7198970 |
Technique for perfecting the active regions of wide bandgap semiconductor nitride devices |
Apr. 3, 2007 |
| 7176497 |
Group III nitride compound semiconductor |
Feb. 13, 2007 |
| 7173285 |
Lithographic methods to reduce stacking fault nucleation sites |
Feb. 6, 2007 |
| 7170096 |
Antimonide-based optical devices |
Jan. 30, 2007 |
| 7170095 |
Semi-insulating GaN and method of making the same |
Jan. 30, 2007 |
| 7166865 |
Semiconductor light emitting device and method for manufacturing same |
Jan. 23, 2007 |
| 7138668 |
Heterojunction diode with reduced leakage current |
Nov. 21, 2006 |
| 7119400 |
Isotopically pure silicon-on-insulator wafers and method of making same |
Oct. 10, 2006 |
| 7105875 |
Lateral power diodes |
Sep. 12, 2006 |
| 7105932 |
Power semiconductor module |
Sep. 12, 2006 |
| 7075111 |
Nitride semiconductor substrate and its production method |
Jul. 11, 2006 |
| 7061024 |
Light-emitting device comprising an EU(II)-activated phosphor |
Jun. 13, 2006 |
| 7053548 |
Light-emitting device with improved brightness control and narrow frame and electronic apparatus with the light-emitting device |
May. 30, 2006 |
| 7048872 |
Codoped direct-gap semiconductor scintillators |
May. 23, 2006 |
| 7030417 |
Semiconductor light emitting device and fabrication method thereof |
Apr. 18, 2006 |
| 7026669 |
Lateral channel transistor |
Apr. 11, 2006 |
| 7023010 |
Si/C superlattice useful for semiconductor devices |
Apr. 4, 2006 |
| 7005678 |
Silicon carbide semiconductor device having junction field effect transistor and method for manufacturing the same |
Feb. 28, 2006 |
| 7002179 |
ZnO system semiconductor device |
Feb. 21, 2006 |
| 6998690 |
Gallium nitride based III-V group compound semiconductor device and method of producing the same |
Feb. 14, 2006 |
| 6998693 |
Chemical sensor using chemically induced electron-hole production at a schottky barrier |
Feb. 14, 2006 |
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