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Class Information
Number: 257/76
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Specified wide band gap (1.5ev) semiconductor material other than gaasp or gaalas
Description: Subject matter including a semiconductor material with a band gap (between its valance and conduction bands) greater that 1.5 electron volts which is not gallium arsenide phosphide or gallium aluminum arsenide.










Sub-classes under this class:

Class Number Class Name Patents
257/77 Diamond or silicon carbide 1,294
257/78 Ii-vi compound 226


Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13

Patent Number Title Of Patent Date Issued
8709925 Method for conductivity control of (Al,In,Ga,B)N Apr. 29, 2014
8704268 Semiconductor light emitting device Apr. 22, 2014
8691606 Method for manufacturing a light emitting diode with smooth surface for reflective electrode Apr. 8, 2014
8692244 Semiconductor device Apr. 8, 2014
8692260 Method of forming a composite laser substrate Apr. 8, 2014
8686431 Gallium and nitrogen containing trilateral configuration for optical devices Apr. 1, 2014
8686473 Apparatus and method for reducing the interface resistance in GaN heterojunction FETs Apr. 1, 2014
8686433 Light emitting device and light emitting device package Apr. 1, 2014
8686432 Semiconductor light emitting device with laser scribed end faces Apr. 1, 2014
8686430 Buffer layer for GaN-on-Si LED Apr. 1, 2014
8686429 LED structure with enhanced mirror reflectivity Apr. 1, 2014
8686396 Non-polar ultraviolet light emitting device and method for fabricating same Apr. 1, 2014
8685772 Method of manufacturing light emitting diode and light emitting diode manufactured thereby Apr. 1, 2014
8680570 Gallium nitride devices with vias Mar. 25, 2014
8680537 Nitride semiconductor element and nitride semiconductor wafer Mar. 25, 2014
8680536 Non-uniform two dimensional electron gas profile in III-Nitride HEMT devices Mar. 25, 2014
8680535 High electron mobility transistor structure with improved breakdown voltage performance Mar. 25, 2014
8680534 Vertical light emitting diodes (LED) having metal substrate and spin coated phosphor layer for producing white light Mar. 25, 2014
8680533 Light-emitting device having light-emitting elements with a shared electrode Mar. 25, 2014
8680580 Field effect transistor and process for manufacturing same Mar. 25, 2014
8674372 HEMT with integrated low forward bias diode Mar. 18, 2014
8674340 Nitride semiconductor light emitting device and fabrication method thereof Mar. 18, 2014
8673709 FinFETs with multiple fin heights Mar. 18, 2014
8669560 Light-emitting device, light-emitting device package and lighting system Mar. 11, 2014
8669591 E-mode HFET device Mar. 11, 2014
8664663 Nitride semiconductor template and light-emitting diode including oxygen-doped layer and silicon-doped layer formed on the oxygen-doped layer Mar. 4, 2014
8659031 Method of producing template for epitaxial growth and nitride semiconductor device Feb. 25, 2014
8659030 III-nitride heterojunction devices having a multilayer spacer Feb. 25, 2014
8659029 Low contact resistance semiconductor structure and method of fabricating the same Feb. 25, 2014
8658451 Activating GaN LEDs by laser spike annealing and flash annealing Feb. 25, 2014
8653502 Group III nitride semiconductor light-emitting device Feb. 18, 2014
8653563 Semiconductor device Feb. 18, 2014
8648460 Thermal interface material with epoxidized nutshell oil Feb. 11, 2014
8648351 Epitaxial substrate and method for manufacturing epitaxial substrate Feb. 11, 2014
8648350 Gallium nitride compound semiconductor light-emitting device Feb. 11, 2014
8648349 Semiconductor device Feb. 11, 2014
8648348 Light emitting device, light emitting device package, and lighting system Feb. 11, 2014
8648342 Waveguide-integrated graphene photodetectors Feb. 11, 2014
8648329 Light-emitting device and projector Feb. 11, 2014
8648328 Light emitting diode (LED) using three-dimensional gallium nitride (GaN) pillar structures with planar surfaces Feb. 11, 2014
8643025 Semiconductor device and method of manufacturing same Feb. 4, 2014
8643024 In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In)N Feb. 4, 2014
8643023 Light emitting diode, light emitting diode lamp, and lighting apparatus Feb. 4, 2014
8643022 Light emitting diodes and method for manufacturing the same Feb. 4, 2014
8637850 Transport conduits for contacts to graphene Jan. 28, 2014
8637873 Package and high frequency terminal structure for the same Jan. 28, 2014
8637895 Semiconductor light emitting device having a high resistive layer Jan. 28, 2014
8633569 AlN inter-layers in III-N material grown on REO/silicon substrate Jan. 21, 2014
8633517 Compound semiconductor device and method of manufacturing the same Jan. 21, 2014
8633494 Semiconductor device and method for manufacturing semiconductor device Jan. 21, 2014

1 2 3 4 5 6 7 8 9 10 11 12 13










 
 
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