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Class Information
Number: 257/759
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Combined with electrical contact or lead > Of specified material other than unalloyed aluminum > Layered > Multiple metal levels on semiconductor, separated by insulating layer (e.g., multiple level metallization for integrated circuit) > Including organic insulating material between metal levels
Description: Subject matter wherein there is at least one layer of organic insulating material between different layers of metal. An organic compound is one which fulfills the requirements of the Class 260 definition, i.e., has a molecule characterized by two carbon atoms bonded together, one atom of carbon being bonded to at least one atom of hydrogen or a halogen, or one atom or carbon bonded to at least one atom of nitrogen by a single or double bond, certain compounds such as HCN, CN-CN, HNCO, HNCS, cyanogen halides, cyanamide, fulminic acid and metal carbides, being exceptions to this rule.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7459761 |
High performance system-on-chip using post passivation process |
Dec. 2, 2008 |
| 7459389 |
Method of forming a semiconductor device having air gaps and the structure so formed |
Dec. 2, 2008 |
| 7452802 |
Method of forming metal wiring for high voltage element |
Nov. 18, 2008 |
| 7449408 |
Method for manufacturing semiconductor device |
Nov. 11, 2008 |
| 7446418 |
Semiconductor device for preventing defective filling of interconnection and cracking of insulating film |
Nov. 4, 2008 |
| 7436064 |
Laser process for reliable and low-resistance electrical contacts |
Oct. 14, 2008 |
| 7429793 |
Semiconductor device having an electronic circuit disposed therein |
Sep. 30, 2008 |
| 7425764 |
Top layers of metal for high performance IC's |
Sep. 16, 2008 |
| 7425735 |
Multi-layer phase-changeable memory devices |
Sep. 16, 2008 |
| 7423346 |
Post passivation interconnection process and structures |
Sep. 9, 2008 |
| 7422975 |
Composite inter-level dielectric structure for an integrated circuit |
Sep. 9, 2008 |
| 7423300 |
Single-mask phase change memory element |
Sep. 9, 2008 |
| 7420279 |
Carbon containing silicon oxide film having high ashing tolerance and adhesion |
Sep. 2, 2008 |
| 7420276 |
Post passivation structure for semiconductor chip or wafer |
Sep. 2, 2008 |
| 7417326 |
Semiconductor device and manufacturing method of the same |
Aug. 26, 2008 |
| 7413978 |
Substrate, electro-optical device, electronic apparatus, method of forming substrate, method of forming electro-optical device, and method of forming electronic apparatus |
Aug. 19, 2008 |
| 7408260 |
Microelectronic assemblies having compliant layers |
Aug. 5, 2008 |
| 7402513 |
Method for forming interlayer insulation film |
Jul. 22, 2008 |
| 7402846 |
Electrostatic discharge (ESD) protection structure and a circuit using the same |
Jul. 22, 2008 |
| 7397135 |
Top layers of metal for high performance IC's |
Jul. 8, 2008 |
| 7394156 |
Semiconductor integrated circuit device and method of producing the same |
Jul. 1, 2008 |
| 7391114 |
Electrode pad section for external connection |
Jun. 24, 2008 |
| 7388291 |
Semiconductor device and method of fabricating the same |
Jun. 17, 2008 |
| 7388292 |
Top layers of metal for high performance IC's |
Jun. 17, 2008 |
| 7384866 |
Methods of forming metal interconnections of semiconductor devices by treating a barrier metal layer |
Jun. 10, 2008 |
| 7385241 |
Vertical-type capacitor structure |
Jun. 10, 2008 |
| 7385291 |
Top layers of metal for high performance IC's |
Jun. 10, 2008 |
| 7385292 |
Top layers of metal for high performance IC's |
Jun. 10, 2008 |
| 7382058 |
Top layers of metal for high performance IC's |
Jun. 3, 2008 |
| 7378738 |
Method for producing self-aligned mask, articles produced by same and composition for same |
May. 27, 2008 |
| 7378740 |
Dual damascene structure for the wiring-line structures of multi-level interconnects in integrated circuit |
May. 27, 2008 |
| 7372154 |
Semiconductor device |
May. 13, 2008 |
| 7372155 |
Top layers of metal for high performance IC's |
May. 13, 2008 |
| 7372143 |
Printed circuit board including via contributing to superior characteristic impedance |
May. 13, 2008 |
| 7372085 |
Top layers of metal for high performance IC's |
May. 13, 2008 |
| 7361991 |
Closed air gap interconnect structure |
Apr. 22, 2008 |
| 7361992 |
Semiconductor device including interconnects formed by damascene process and manufacturing method thereof |
Apr. 22, 2008 |
| 7358170 |
Methods of forming conductive interconnects, and methods of depositing nickel |
Apr. 15, 2008 |
| 7358610 |
Top layers of metal for high performance IC's |
Apr. 15, 2008 |
| 7355255 |
Nickel silicide including indium and a method of manufacture therefor |
Apr. 8, 2008 |
| 7352065 |
Semiconductor devices having amorphous silicon-carbon dielectric and conducting layers |
Apr. 1, 2008 |
| 7352061 |
Flexible core for enhancement of package interconnect reliability |
Apr. 1, 2008 |
| 7348593 |
Thin film transistor and method of fabricating the same |
Mar. 25, 2008 |
| 7345303 |
Organic thin-film transistors |
Mar. 18, 2008 |
| 7342314 |
Device having a useful structure and an auxiliary structure |
Mar. 11, 2008 |
| 7338884 |
Interconnecting substrate for carrying semiconductor device, method of producing thereof and package of semiconductor device |
Mar. 4, 2008 |
| 7335992 |
Semiconductor apparatus with improved yield |
Feb. 26, 2008 |
| 7329953 |
Structure for reducing leakage currents and high contact resistance for embedded memory and method for making same |
Feb. 12, 2008 |
| 7327022 |
Assembly, contact and coupling interconnection for optoelectronics |
Feb. 5, 2008 |
| 7319270 |
Multi-layer electrode and method of forming the same |
Jan. 15, 2008 |
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