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Class Information
Number: 257/759
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Combined with electrical contact or lead > Of specified material other than unalloyed aluminum > Layered > Multiple metal levels on semiconductor, separated by insulating layer (e.g., multiple level metallization for integrated circuit) > Including organic insulating material between metal levels
Description: Subject matter wherein there is at least one layer of organic insulating material between different layers of metal. An organic compound is one which fulfills the requirements of the Class 260 definition, i.e., has a molecule characterized by two carbon atoms bonded together, one atom of carbon being bonded to at least one atom of hydrogen or a halogen, or one atom or carbon bonded to at least one atom of nitrogen by a single or double bond, certain compounds such as HCN, CN-CN, HNCO, HNCS, cyanogen halides, cyanamide, fulminic acid and metal carbides, being exceptions to this rule.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7612453 |
Semiconductor device having an interconnect structure and a reinforcing insulating film |
Nov. 3, 2009 |
| 7605471 |
Semiconductor devices and methods for manufacturing the same |
Oct. 20, 2009 |
| 7602048 |
Semiconductor device and semiconductor wafer having a multi-layered insulation film |
Oct. 13, 2009 |
| 7602062 |
Package substrate with dual material build-up layers |
Oct. 13, 2009 |
| 7592710 |
Bond pad structure for wire bonding |
Sep. 22, 2009 |
| 7586132 |
Power FET with low on-resistance using merged metal layers |
Sep. 8, 2009 |
| RE40887 |
Semiconductor chip with redistribution metal layer |
Sep. 1, 2009 |
| 7582970 |
Carbon containing silicon oxide film having high ashing tolerance and adhesion |
Sep. 1, 2009 |
| 7579272 |
Methods of forming low-k dielectric layers containing carbon nanostructures |
Aug. 25, 2009 |
| 7566575 |
Mounting circuit and method for producing semiconductor-chip-mounting circuit |
Jul. 28, 2009 |
| 7563707 |
Laser process for reliable and low-resistance electrical contacts |
Jul. 21, 2009 |
| 7554200 |
Semiconductor devices including porous insulators |
Jun. 30, 2009 |
| 7554168 |
Semiconductor acceleration sensor device |
Jun. 30, 2009 |
| 7550788 |
Semiconductor device having fuse element arranged between electrodes formed in different wiring layers |
Jun. 23, 2009 |
| 7550824 |
Low k interconnect dielectric using surface transformation |
Jun. 23, 2009 |
| 7547971 |
Semiconductor integrated circuit device |
Jun. 16, 2009 |
| 7544966 |
Three-terminal electrical bistable devices |
Jun. 9, 2009 |
| 7541646 |
Thin film transistor device and method of manufacturing the same |
Jun. 2, 2009 |
| 7541679 |
Exposed pore sealing post patterning |
Jun. 2, 2009 |
| 7538434 |
Copper interconnection with conductive polymer layer and method of forming the same |
May. 26, 2009 |
| 7521802 |
Semiconductor device having a refractory metal containing film and method for manufacturing the same |
Apr. 21, 2009 |
| 7521381 |
Method for producing silicon wafer and silicon wafer |
Apr. 21, 2009 |
| 7518245 |
Contact structure of a semiconductor device |
Apr. 14, 2009 |
| 7518244 |
Reducing line to line capacitance using oriented dielectric films |
Apr. 14, 2009 |
| 7514779 |
Multilayer build-up wiring board |
Apr. 7, 2009 |
| 7511296 |
Organic semiconductor device, field-effect transistor, and their manufacturing methods |
Mar. 31, 2009 |
| 7504709 |
Electronic device, method of manufacturing an electronic device, and electronic apparatus |
Mar. 17, 2009 |
| 7504699 |
Fabrication of a semiconductor device with air gaps for ultra-low capacitance interconnections |
Mar. 17, 2009 |
| 7504719 |
Printed wiring board having a roughened surface formed on a metal layer, and method for producing the same |
Mar. 17, 2009 |
| 7504727 |
Semiconductor interconnect structure utilizing a porous dielectric material as an etch stop layer between adjacent non-porous dielectric materials |
Mar. 17, 2009 |
| 7489038 |
Design of BEOL patterns to reduce the stresses on structures below chip bondpads |
Feb. 10, 2009 |
| 7485964 |
Dielectric material |
Feb. 3, 2009 |
| 7485915 |
Semiconductor device and method having capacitor and capacitor insulating film that includes preset metal element |
Feb. 3, 2009 |
| 7485569 |
Printed circuit board including embedded chips and method of fabricating the same |
Feb. 3, 2009 |
| 7482624 |
Organic electronic circuit and method for making the same |
Jan. 27, 2009 |
| 7479671 |
Thin film phase change memory cell formed on silicon-on-insulator substrate |
Jan. 20, 2009 |
| 7474002 |
Semiconductor device having dielectric film having aperture portion |
Jan. 6, 2009 |
| 7470988 |
Chip structure and process for forming the same |
Dec. 30, 2008 |
| 7465656 |
Semiconductor device and method for fabricating the same |
Dec. 16, 2008 |
| 7466028 |
Semiconductor contact structure |
Dec. 16, 2008 |
| 7462900 |
Phase changeable memory devices including nitrogen and/or silicon |
Dec. 9, 2008 |
| 7459761 |
High performance system-on-chip using post passivation process |
Dec. 2, 2008 |
| 7459389 |
Method of forming a semiconductor device having air gaps and the structure so formed |
Dec. 2, 2008 |
| 7452802 |
Method of forming metal wiring for high voltage element |
Nov. 18, 2008 |
| 7449408 |
Method for manufacturing semiconductor device |
Nov. 11, 2008 |
| 7446418 |
Semiconductor device for preventing defective filling of interconnection and cracking of insulating film |
Nov. 4, 2008 |
| 7436064 |
Laser process for reliable and low-resistance electrical contacts |
Oct. 14, 2008 |
| 7429793 |
Semiconductor device having an electronic circuit disposed therein |
Sep. 30, 2008 |
| 7425735 |
Multi-layer phase-changeable memory devices |
Sep. 16, 2008 |
| 7425764 |
Top layers of metal for high performance IC's |
Sep. 16, 2008 |
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