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Class Information
Number: 257/757
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Combined with electrical contact or lead > Of specified material other than unalloyed aluminum > Layered > At least one layer of silicide or polycrystalline silicon > Silicide of refractory or platinum group metal
Description: Subject matter wherein a layered electrical contact or lead includes a silicide of a metal found in groups IVA, VA, VIA or VIIIA (other than iron (Fe), nickel (Ni) or cobalt (Co)) of the periodic table of the elements.










Patents under this class:
1 2 3 4 5 6 7

Patent Number Title Of Patent Date Issued
8648464 Semiconductor device and manufacturing method thereof Feb. 11, 2014
8643182 Semiconductor film, method for manufacturing the same, and power storage device Feb. 4, 2014
8629561 Air gap-containing interconnect structure having photo-patternable low k material Jan. 14, 2014
8546945 Pillar structure having a non-planar surface for semiconductor devices Oct. 1, 2013
8518819 Semiconductor device contact structures and methods for making the same Aug. 27, 2013
8513807 Semiconductor devices including a ruthenium film Aug. 20, 2013
8507996 Block contact plugs for MOS devices Aug. 13, 2013
8455044 Semiconductor film, method for manufacturing the same, and power storage device Jun. 4, 2013
8456007 Chemical vapor deposition of titanium Jun. 4, 2013
8395265 Metal silicide nanowires and methods of their production Mar. 12, 2013
8378490 Semiconductor apparatus including a metal alloy between a first contact and a second contact Feb. 19, 2013
8368219 Buried silicide local interconnect with sidewall spacers and method for making the same Feb. 5, 2013
8349730 Transitional interface between metal and dielectric in interconnect structures Jan. 8, 2013
8344511 Method for manufacturing a semiconductor device having a silicide region comprised of a silicide of a nickel alloy Jan. 1, 2013
8334574 Semiconductor contact structure and method of fabricating the same Dec. 18, 2012
8330234 Semiconductor device and manufacturing process therefor Dec. 11, 2012
8299549 Layer structure for electrical contacting of semiconductor components Oct. 30, 2012
8288828 Via contact structure having dual silicide layers Oct. 16, 2012
8247323 Semiconductor device Aug. 21, 2012
8129844 Method of forming a metal silicide layer, devices incorporating metal silicide layers and design structures for the devices Mar. 6, 2012
8101871 Aluminum bond pads with enhanced wire bond stability Jan. 24, 2012
8049334 Buried silicide local interconnect with sidewall spacers and method for making the same Nov. 1, 2011
8039391 Method of forming a contact in a semiconductor device with engineered plasma treatment profile of barrier metal layer Oct. 18, 2011
8039378 Method of manufacturing a semiconductor device Oct. 18, 2011
8021944 Method for fabricating semiconductor device Sep. 20, 2011
8022482 Device configuration of asymmetrical DMOSFET with schottky barrier source Sep. 20, 2011
7919845 Formation of a hybrid integrated circuit device Apr. 5, 2011
7884477 Air gap structure having protective metal silicide pads on a metal feature Feb. 8, 2011
7875976 Semiconductor device including a silicide layer and a dielectric layer Jan. 25, 2011
7875939 Semiconductor device including an ohmic layer Jan. 25, 2011
7863191 Manufacturing method of semiconductor device Jan. 4, 2011
7861406 Method of forming CMOS transistors with dual-metal silicide formed through the contact openings Jan. 4, 2011
7858518 Method for forming a selective contact and local interconnect in situ Dec. 28, 2010
7847401 Methods, systems and structures for forming semiconductor structures incorporating high-temperature processing steps Dec. 7, 2010
7847410 Interconnect of group III-V semiconductor device and fabrication method for making the same Dec. 7, 2010
7799682 Transistor having a locally provided metal silicide region in contact areas and a method of forming the transistor Sep. 21, 2010
7800226 Integrated circuit with metal silicide regions Sep. 21, 2010
7795690 Thin film transistor substrate and method of fabricating the same Sep. 14, 2010
7786004 Method of treating an exposed conductive film prior to forming a silicide Aug. 31, 2010
7777344 Transitional interface between metal and dielectric in interconnect structures Aug. 17, 2010
7755191 Semiconductor device and method of manufacturing the same Jul. 13, 2010
7750471 Metal and alloy silicides on a single silicon wafer Jul. 6, 2010
7737557 Semiconductor apparatus Jun. 15, 2010
7719035 Low contact resistance CMOS circuits and methods for their fabrication May. 18, 2010
7704871 Integration of thin film resistors having different TCRs into single die Apr. 27, 2010
7701059 Low resistance metal silicide local interconnects and a method of making Apr. 20, 2010
7679192 Semiconductor device including cover layer Mar. 16, 2010
7649263 Semiconductor device Jan. 19, 2010
7649232 P-channel MOS transistor, semiconductor integrated circuit device and fabrication process thereof Jan. 19, 2010
7638433 Semiconductor device and method of fabricating the same Dec. 29, 2009

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