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Class Information
Number: 257/751
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Combined with electrical contact or lead > Of specified material other than unalloyed aluminum > Layered > At least one layer forms a diffusion barrier
Description: Subject matter wherein at least one layer forms a barrier to the diffusion of the contact material into the semiconductor or into another contact layer.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7459788 |
Ohmic electrode structure of nitride semiconductor device |
Dec. 2, 2008 |
| 7459786 |
Semiconductor device |
Dec. 2, 2008 |
| 7459763 |
Reprogrammable metal-to-metal antifuse employing carbon-containing antifuse material |
Dec. 2, 2008 |
| 7459738 |
Ferroelectric memory element and method for manufacturing the same |
Dec. 2, 2008 |
| 7456501 |
Semiconductor structure having recess with conductive metal |
Nov. 25, 2008 |
| 7456490 |
Sealing porous dielectrics with silane coupling reagents |
Nov. 25, 2008 |
| 7453149 |
Composite barrier layer |
Nov. 18, 2008 |
| 7446416 |
Barrier material formation in integrated circuit structures |
Nov. 4, 2008 |
| 7446415 |
Method for filling electrically different features |
Nov. 4, 2008 |
| 7443020 |
Minimizing number of masks to be changed when changing existing connectivity in an integrated circuit |
Oct. 28, 2008 |
| 7439176 |
Semiconductor device multilayer structure, fabrication method for the same, semiconductor device having the same, and semiconductor device fabrication method |
Oct. 21, 2008 |
| 7435670 |
Bit line barrier metal layer for semiconductor device and process for preparing the same |
Oct. 14, 2008 |
| 7432192 |
Post ECP multi-step anneal/H.sub.2 treatment to reduce film impurity |
Oct. 7, 2008 |
| 7423345 |
Semiconductor constructions comprising a layer of metal over a substrate |
Sep. 9, 2008 |
| 7422977 |
Copper adhesion improvement device and method |
Sep. 9, 2008 |
| 7420275 |
Boron-doped SIC copper diffusion barrier films |
Sep. 2, 2008 |
| 7417264 |
Top-emitting nitride-based light emitting device and method of manufacturing the same |
Aug. 26, 2008 |
| 7414314 |
Semiconductor device and manufacturing method thereof |
Aug. 19, 2008 |
| 7411301 |
Semiconductor integrated circuit device |
Aug. 12, 2008 |
| 7411300 |
Agglomeration control using early transition metal alloys |
Aug. 12, 2008 |
| 7411299 |
Passivation film of semiconductor device |
Aug. 12, 2008 |
| 7411214 |
High performance FET devices and methods thereof |
Aug. 12, 2008 |
| 7405481 |
Glue layer for adhesion improvement between conductive line and etch stop layer in an integrated circuit chip |
Jul. 29, 2008 |
| 7404247 |
Method for making a pressure sensor |
Jul. 29, 2008 |
| 7402883 |
Back end of the line structures with liner and noble metal layer |
Jul. 22, 2008 |
| 7400043 |
Semiconductor constructions |
Jul. 15, 2008 |
| 7394157 |
Integrated circuit and seed layers |
Jul. 1, 2008 |
| 7394154 |
Embedded barrier for dielectric encapsulation |
Jul. 1, 2008 |
| 7390739 |
Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region |
Jun. 24, 2008 |
| 7388290 |
Spacer patterned, high dielectric constant capacitor and methods for fabricating the same |
Jun. 17, 2008 |
| 7388289 |
Local multilayered metallization |
Jun. 17, 2008 |
| 7385294 |
Semiconductor device having nickel silicide and method of fabricating nickel silicide |
Jun. 10, 2008 |
| 7385259 |
Method of manufacturing a multilayered doped conductor for a contact in an integrated circuit device |
Jun. 10, 2008 |
| 7381643 |
Wiring structure forming method and semiconductor device |
Jun. 3, 2008 |
| 7372160 |
Barrier film deposition over metal for reduction in metal dishing after CMP |
May. 13, 2008 |
| 7372153 |
Integrated circuit package bond pad having plurality of conductive members |
May. 13, 2008 |
| 7372152 |
Copper interconnect systems |
May. 13, 2008 |
| 7365430 |
Semiconductor device and method of manufacturing the same |
Apr. 29, 2008 |
| 7361992 |
Semiconductor device including interconnects formed by damascene process and manufacturing method thereof |
Apr. 22, 2008 |
| 7361991 |
Closed air gap interconnect structure |
Apr. 22, 2008 |
| 7358589 |
Amorphous carbon metal-to-metal antifuse with adhesion promoting layers |
Apr. 15, 2008 |
| 7352053 |
Insulating layer having decreased dielectric constant and increased hardness |
Apr. 1, 2008 |
| 7348676 |
Semiconductor device having a metal wiring structure |
Mar. 25, 2008 |
| 7348648 |
Interconnect structure with a barrier-redundancy feature |
Mar. 25, 2008 |
| 7348590 |
Phase change memory cell with high read margin at low power operation |
Mar. 25, 2008 |
| 7341908 |
Semiconductor device and method of manufacturing the same |
Mar. 11, 2008 |
| 7335990 |
Process of forming a composite diffusion barrier in copper/organic low-k damascene technology |
Feb. 26, 2008 |
| 7335989 |
Semiconductor device and production method therefor |
Feb. 26, 2008 |
| 7332813 |
Semiconductor device |
Feb. 19, 2008 |
| 7332428 |
Metal interconnect structure and method |
Feb. 19, 2008 |
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