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Class Information
Number: 257/745
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Combined with electrical contact or lead > Of specified material other than unalloyed aluminum > For compound semiconductor material > Contact for iii-v material
Description: Subject matter in which the compound semiconductor material is a group III-V compound, i.e., one component is from periodic table group III and the other is from periodic table group V.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7456445 |
Group III nitride semiconductor light emitting device |
Nov. 25, 2008 |
| 7436045 |
Gallium nitride-based semiconductor device |
Oct. 14, 2008 |
| 7420227 |
Cu-metalized compound semiconductor device |
Sep. 2, 2008 |
| 7417264 |
Top-emitting nitride-based light emitting device and method of manufacturing the same |
Aug. 26, 2008 |
| 7402841 |
Gallium nitride-based compound semiconductor light-emitting device and electrode for the same |
Jul. 22, 2008 |
| 7335924 |
High-brightness light emitting diode having reflective layer |
Feb. 26, 2008 |
| 7329956 |
Dual damascene cleaning method |
Feb. 12, 2008 |
| 7285857 |
GaN-based III--V group compound semiconductor device and p-type electrode for the same |
Oct. 23, 2007 |
| 7253015 |
Low doped layer for nitride-based semiconductor device |
Aug. 7, 2007 |
| 7247891 |
Semiconductor device and method for fabricating the same |
Jul. 24, 2007 |
| 7193249 |
Nitride-based light emitting device and method of manufacturing the same |
Mar. 20, 2007 |
| 7193247 |
Gallium nitride compound semiconductor device |
Mar. 20, 2007 |
| 7193322 |
Sacrificial shallow trench isolation oxide liner for strained-silicon channel CMOS devices |
Mar. 20, 2007 |
| 7190076 |
Electrode for p-type Group III nitride compound semiconductor layer and method for producing the same |
Mar. 13, 2007 |
| 7154180 |
Electronic device, method of manufacture of the same, and sputtering target |
Dec. 26, 2006 |
| 7145237 |
Electrode employing nitride-based semiconductor of III-V group compound, and producing method thereof |
Dec. 5, 2006 |
| 7135772 |
Nitride semiconductor laser |
Nov. 14, 2006 |
| 7109529 |
Light-emitting semiconductor device using group III nitride compound |
Sep. 19, 2006 |
| 7061110 |
Ohmic contact to semiconductor devices and method of manufacturing the same |
Jun. 13, 2006 |
| 7057210 |
Electrode for light-emitting semiconductor devices and method of producing the electrode |
Jun. 6, 2006 |
| 7042089 |
Group III nitride compound semiconductor device |
May. 9, 2006 |
| 7019336 |
Semiconductor device and method for manufacturing the same |
Mar. 28, 2006 |
| 7018915 |
Group III nitride compound semiconductor device and method for forming an electrode |
Mar. 28, 2006 |
| 7005680 |
Semiconductor light-emitting device including a divided electrode having a plurality of spaced apart conductive members |
Feb. 28, 2006 |
| 7005684 |
Group III nitride based semiconductor luminescent element |
Feb. 28, 2006 |
| 6998649 |
Semiconductor light-emitting device |
Feb. 14, 2006 |
| 6998690 |
Gallium nitride based III-V group compound semiconductor device and method of producing the same |
Feb. 14, 2006 |
| 6992334 |
Multi-layer highly reflective ohmic contacts for semiconductor devices |
Jan. 31, 2006 |
| 6946685 |
Light emitting semiconductor method and device |
Sep. 20, 2005 |
| 6933545 |
Hetero-bipolar transistor having the base interconnection provided on the normal mesa surface of the collector mesa |
Aug. 23, 2005 |
| 6921927 |
System and method for enhanced LED thermal conductivity |
Jul. 26, 2005 |
| 6919583 |
End surface light-emitting element having increased external light emission efficiency and self-scanning light-emitting element array using the same |
Jul. 19, 2005 |
| 6903392 |
Semiconductor device and its manufacturing method |
Jun. 7, 2005 |
| 6894391 |
Electrode structure on P-type III group nitride semiconductor layer and formation method thereof |
May. 17, 2005 |
| 6891268 |
Nitride semiconductor laser |
May. 10, 2005 |
| 6888245 |
Semiconductor device |
May. 3, 2005 |
| 6872986 |
Nitride semiconductor device |
Mar. 29, 2005 |
| 6858878 |
Light-emitting device and electric apparatus |
Feb. 22, 2005 |
| 6822307 |
Semiconductor triode device having a compound-semiconductor channel layer |
Nov. 23, 2004 |
| 6812570 |
Organic packages having low tin solder connections |
Nov. 2, 2004 |
| 6809352 |
Palladium silicide (PdSi) schottky electrode for gallium nitride semiconductor devices |
Oct. 26, 2004 |
| 6806571 |
III nitride compound semiconductor element an electrode forming method |
Oct. 19, 2004 |
| 6781158 |
Light emitting element and method for manufacturing thereof |
Aug. 24, 2004 |
| 6777805 |
Group-III nitride compound semiconductor device |
Aug. 17, 2004 |
| 6747297 |
Semiconductor device |
Jun. 8, 2004 |
| 6740914 |
FET circuit block with reduced self-heating |
May. 25, 2004 |
| 6734515 |
Semiconductor light receiving element |
May. 11, 2004 |
| 6727531 |
Indium gallium nitride channel high electron mobility transistors, and method of making the same |
Apr. 27, 2004 |
| 6717182 |
Edge-emitting light-emitting device having improved external luminous efficiency and self-scanning light-emitting device array comprising the same |
Apr. 6, 2004 |
| 6683332 |
Heterojunction bipolar transistor and manufacturing method therefor including electrode alloyed reaction layers |
Jan. 27, 2004 |
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