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Class Information
Number: 257/744
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Combined with electrical contact or lead > Of specified material other than unalloyed aluminum > For compound semiconductor material
Description: Subject matter in which the electrical contact material contacts a semiconductor material which is a chemical compound, as contrasted to an elemental semiconductor.

Sub-classes under this class:

Class Number Class Name Patents
257/745 Contact for iii-v material 245

Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
7135772 Nitride semiconductor laser Nov. 14, 2006
7115991 Method for creating barriers for copper diffusion Oct. 3, 2006
7088003 Structures and methods for integration of ultralow-k dielectrics with improved reliability Aug. 8, 2006
7061110 Ohmic contact to semiconductor devices and method of manufacturing the same Jun. 13, 2006
7057210 Electrode for light-emitting semiconductor devices and method of producing the electrode Jun. 6, 2006
7023030 MISFET Apr. 4, 2006
7018915 Group III nitride compound semiconductor device and method for forming an electrode Mar. 28, 2006
7012332 Semiconductor device having sealing structure for wide gap type semiconductor chip Mar. 14, 2006
6961231 Interposer providing low-inductance decoupling capacitance for a packaged integrated circuit Nov. 1, 2005
6921970 Package for electronic parts, lid thereof, material for the lid and method for producing the lid material Jul. 26, 2005
6894391 Electrode structure on P-type III group nitride semiconductor layer and formation method thereof May. 17, 2005
6891268 Nitride semiconductor laser May. 10, 2005
6878959 Group III-V semiconductor devices including semiconductor materials made by spatially-selective intermixing of atoms on the group V sublattice Apr. 12, 2005
6858878 Light-emitting device and electric apparatus Feb. 22, 2005
6853013 Light-emitting element and method of producing the same Feb. 8, 2005
6825559 Group III nitride based flip-chip intergrated circuit and method for fabricating Nov. 30, 2004
6809352 Palladium silicide (PdSi) schottky electrode for gallium nitride semiconductor devices Oct. 26, 2004
6806571 III nitride compound semiconductor element an electrode forming method Oct. 19, 2004
6798068 MOCVD formation of Cu2S Sep. 28, 2004
6784543 External connection terminal and semiconductor device Aug. 31, 2004
6780768 Bonding pad for optical semiconductor device and fabrication method thereof Aug. 24, 2004
6747291 Ohmic contacts on p-type silicon carbide using carbon films Jun. 8, 2004
6737748 Stacked via with specially designed landing pad for integrated semiconductor structures May. 18, 2004
6734515 Semiconductor light receiving element May. 11, 2004
6717191 Aluminum-beryllium alloys for air bridges Apr. 6, 2004
6693352 Contact structure for group III-V semiconductor devices and method of producing the same Feb. 17, 2004
6664570 P-type contact electrode device and light-emitting device Dec. 16, 2003
6649939 Light-emitting diode with a structured surface Nov. 18, 2003
6603145 High temperature circuit apparatus Aug. 5, 2003
6583455 Fabrication of low resistance, non-alloyed, OHMIC contacts to INP using non-stoichiometric INP layers Jun. 24, 2003
6548898 External connection terminal and semiconductor device Apr. 15, 2003
6515310 Light-emitting device and electric apparatus Feb. 4, 2003
6509590 Aluminum-beryllium alloys for air bridges Jan. 21, 2003
6469319 Ohmic contact to a II-VI compound semiconductor device and a method of manufacturing the same Oct. 22, 2002
6452228 Silicon carbide semiconductor device Sep. 17, 2002
6452262 Layout of Vdd and Vss balls in a four layer PBGA Sep. 17, 2002
6448648 Metalization of electronic semiconductor devices Sep. 10, 2002
6448652 Interconnect structure with a dielectric layer conforming to the perimeter of a wiring layer Sep. 10, 2002
6410944 Epitaxial structure for low ohmic contact resistance in p-type GaN-based semiconductors Jun. 25, 2002
6388323 Electrode material and electrode for III-V group compound semiconductor May. 14, 2002
6388272 W/WC/TAC ohmic and rectifying contacts on SiC May. 14, 2002
6365969 Ohmic electrode, method of manufacturing the same and semiconductor device Apr. 2, 2002
6344665 Electrode structure of compound semiconductor device Feb. 5, 2002
6297555 Method to obtain a low resistivity and conformity chemical vapor deposition titanium film Oct. 2, 2001
6281526 Nitride compound light emitting device and method for fabricating same Aug. 28, 2001
6268618 Electrode for light-emitting semiconductor devices and method of producing the electrode Jul. 31, 2001
6265731 Ohmic contacts for p-type wide bandgap II-VI semiconductor materials Jul. 24, 2001
6239490 P-contact for a Group III-nitride semiconductor device and method of making same May. 29, 2001
6229203 Semiconductor interconnect structure for high temperature applications May. 8, 2001
6222271 Method of using hydrogen gas in sputter deposition of aluminum-containing films and aluminum-containing films derived therefrom Apr. 24, 2001

1 2 3 4

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