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Class Information
Number: 257/744
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Combined with electrical contact or lead > Of specified material other than unalloyed aluminum > For compound semiconductor material
Description: Subject matter in which the electrical contact material contacts a semiconductor material which is a chemical compound, as contrasted to an elemental semiconductor.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7420227 |
Cu-metalized compound semiconductor device |
Sep. 2, 2008 |
| 7402845 |
Cascoded rectifier package |
Jul. 22, 2008 |
| 7402841 |
Gallium nitride-based compound semiconductor light-emitting device and electrode for the same |
Jul. 22, 2008 |
| 7368822 |
Copper metalized ohmic contact electrode of compound device |
May. 6, 2008 |
| 7335924 |
High-brightness light emitting diode having reflective layer |
Feb. 26, 2008 |
| 7329956 |
Dual damascene cleaning method |
Feb. 12, 2008 |
| 7285842 |
Siloxane epoxy polymers as metal diffusion barriers to reduce electromigration |
Oct. 23, 2007 |
| 7242034 |
Method for fabricating a component having an electrical contact region, and component having an electrical contact region |
Jul. 10, 2007 |
| 7190076 |
Electrode for p-type Group III nitride compound semiconductor layer and method for producing the same |
Mar. 13, 2007 |
| 7145237 |
Electrode employing nitride-based semiconductor of III-V group compound, and producing method thereof |
Dec. 5, 2006 |
| 7145184 |
Nitride semiconductor element |
Dec. 5, 2006 |
| 7135772 |
Nitride semiconductor laser |
Nov. 14, 2006 |
| 7115991 |
Method for creating barriers for copper diffusion |
Oct. 3, 2006 |
| 7088003 |
Structures and methods for integration of ultralow-k dielectrics with improved reliability |
Aug. 8, 2006 |
| 7061110 |
Ohmic contact to semiconductor devices and method of manufacturing the same |
Jun. 13, 2006 |
| 7057210 |
Electrode for light-emitting semiconductor devices and method of producing the electrode |
Jun. 6, 2006 |
| 7023030 |
MISFET |
Apr. 4, 2006 |
| 7018915 |
Group III nitride compound semiconductor device and method for forming an electrode |
Mar. 28, 2006 |
| 7012332 |
Semiconductor device having sealing structure for wide gap type semiconductor chip |
Mar. 14, 2006 |
| 6961231 |
Interposer providing low-inductance decoupling capacitance for a packaged integrated circuit |
Nov. 1, 2005 |
| 6921970 |
Package for electronic parts, lid thereof, material for the lid and method for producing the lid material |
Jul. 26, 2005 |
| 6894391 |
Electrode structure on P-type III group nitride semiconductor layer and formation method thereof |
May. 17, 2005 |
| 6891268 |
Nitride semiconductor laser |
May. 10, 2005 |
| 6878959 |
Group III-V semiconductor devices including semiconductor materials made by spatially-selective intermixing of atoms on the group V sublattice |
Apr. 12, 2005 |
| 6858878 |
Light-emitting device and electric apparatus |
Feb. 22, 2005 |
| 6853013 |
Light-emitting element and method of producing the same |
Feb. 8, 2005 |
| 6825559 |
Group III nitride based flip-chip intergrated circuit and method for fabricating |
Nov. 30, 2004 |
| 6809352 |
Palladium silicide (PdSi) schottky electrode for gallium nitride semiconductor devices |
Oct. 26, 2004 |
| 6806571 |
III nitride compound semiconductor element an electrode forming method |
Oct. 19, 2004 |
| 6798068 |
MOCVD formation of Cu2S |
Sep. 28, 2004 |
| 6784543 |
External connection terminal and semiconductor device |
Aug. 31, 2004 |
| 6780768 |
Bonding pad for optical semiconductor device and fabrication method thereof |
Aug. 24, 2004 |
| 6747291 |
Ohmic contacts on p-type silicon carbide using carbon films |
Jun. 8, 2004 |
| 6737748 |
Stacked via with specially designed landing pad for integrated semiconductor structures |
May. 18, 2004 |
| 6734515 |
Semiconductor light receiving element |
May. 11, 2004 |
| 6717191 |
Aluminum-beryllium alloys for air bridges |
Apr. 6, 2004 |
| 6693352 |
Contact structure for group III-V semiconductor devices and method of producing the same |
Feb. 17, 2004 |
| 6664570 |
P-type contact electrode device and light-emitting device |
Dec. 16, 2003 |
| 6649939 |
Light-emitting diode with a structured surface |
Nov. 18, 2003 |
| 6603145 |
High temperature circuit apparatus |
Aug. 5, 2003 |
| 6583455 |
Fabrication of low resistance, non-alloyed, OHMIC contacts to INP using non-stoichiometric INP layers |
Jun. 24, 2003 |
| 6548898 |
External connection terminal and semiconductor device |
Apr. 15, 2003 |
| 6515310 |
Light-emitting device and electric apparatus |
Feb. 4, 2003 |
| 6509590 |
Aluminum-beryllium alloys for air bridges |
Jan. 21, 2003 |
| 6469319 |
Ohmic contact to a II-VI compound semiconductor device and a method of manufacturing the same |
Oct. 22, 2002 |
| 6452262 |
Layout of Vdd and Vss balls in a four layer PBGA |
Sep. 17, 2002 |
| 6452228 |
Silicon carbide semiconductor device |
Sep. 17, 2002 |
| 6448652 |
Interconnect structure with a dielectric layer conforming to the perimeter of a wiring layer |
Sep. 10, 2002 |
| 6448648 |
Metalization of electronic semiconductor devices |
Sep. 10, 2002 |
| 6410944 |
Epitaxial structure for low ohmic contact resistance in p-type GaN-based semiconductors |
Jun. 25, 2002 |
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