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Class Information
Number: 257/743
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Combined with electrical contact or lead > Of specified material other than unalloyed aluminum > With a semiconductor conductivity substitution type dopant (e.g., germanium in the case of a gallium arsenide semiconductor) in a contact metal) > For compound semiconductor material
Description: Subject matter in which the electrical contact material contacts and contains a dopant for a semiconductor material which is a chemical compound, as contrasted to an elemental semiconductor.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8669600 Liquid crystal display device Mar. 11, 2014
8564129 Low resistivity contact Oct. 22, 2013
8169077 Dielectric interconnect structures and methods for forming the same May. 1, 2012
8125082 Reduction of silicide formation temperature on SiGe containing substrates Feb. 28, 2012
7999346 Semiconductor device and method of manufacturing the same Aug. 16, 2011
7923837 Microelectronic device patterned by ablating and subsequently sintering said microelectronic device Apr. 12, 2011
7671469 SiGe device with SiGe-embedded dummy pattern for alleviating micro-loading effect Mar. 2, 2010
7638820 Contact method for thin silicon carbide epitaxial layer and semiconductor devices formed by those methods Dec. 29, 2009
7368822 Copper metalized ohmic contact electrode of compound device May. 6, 2008
7187014 Semiconductor device and method for fabricating the same Mar. 6, 2007
7129579 Semiconductor apparatus and method for fabricating the same Oct. 31, 2006
7012332 Semiconductor device having sealing structure for wide gap type semiconductor chip Mar. 14, 2006
6989598 Thin film electrode for forming ohmic contact in light emitting diodes and laser diodes using nickel-based solid solution for manufacturing high performance gallium nitride-based optical devic Jan. 24, 2006
6921970 Package for electronic parts, lid thereof, material for the lid and method for producing the lid material Jul. 26, 2005
6894325 Fabrication of low resistance, non-alloyed, ohmic contacts to InP using non-stoichiometric InP layers May. 17, 2005
6894391 Electrode structure on P-type III group nitride semiconductor layer and formation method thereof May. 17, 2005
6806572 Structure for contact formation using a silicon-germanium alloy Oct. 19, 2004
6759683 Formulation and fabrication of an improved Ni based composite Ohmic contact to n-SiC for high temperature and high power device applications Jul. 6, 2004
6753606 Method and structure for reduction of contact resistance of metal silicides using a metal-germanium alloy Jun. 22, 2004
6693352 Contact structure for group III-V semiconductor devices and method of producing the same Feb. 17, 2004
6664631 Apparatus for self-doping contacts to a semiconductor Dec. 16, 2003
6664570 P-type contact electrode device and light-emitting device Dec. 16, 2003
6657303 Integrated circuit with low solubility metal-conductor interconnect cap Dec. 2, 2003
6583455 Fabrication of low resistance, non-alloyed, OHMIC contacts to INP using non-stoichiometric INP layers Jun. 24, 2003
6541859 Methods and structures for silver interconnections in integrated circuits Apr. 1, 2003
6541863 Semiconductor device having a reduced signal processing time and a method of fabricating the same Apr. 1, 2003
6507057 Cross under metal wiring structure for self-scanning light-emitting device Jan. 14, 2003
6479897 Semiconductor device having fluorine-added carbon dielectric film and method of fabricating the same Nov. 12, 2002
6468890 Semiconductor device with ohmic contact-connection and method for the ohmic contact-connection of a semiconductor device Oct. 22, 2002
6452228 Silicon carbide semiconductor device Sep. 17, 2002
6429471 Compound semiconductor field effect transistor and method for the fabrication thereof Aug. 6, 2002
6424036 Semiconductor device and method for manufacturing the same Jul. 23, 2002
6403987 Electrode for light-emitting semiconductor devices Jun. 11, 2002
6297555 Method to obtain a low resistivity and conformity chemical vapor deposition titanium film Oct. 2, 2001
6268618 Electrode for light-emitting semiconductor devices and method of producing the electrode Jul. 31, 2001
6222271 Method of using hydrogen gas in sputter deposition of aluminum-containing films and aluminum-containing films derived therefrom Apr. 24, 2001
6143655 Methods and structures for silver interconnections in integrated circuits Nov. 7, 2000
6100176 Methods and structures for gold interconnections in integrated circuits Aug. 8, 2000
6030894 Method for manufacturing a semiconductor device having contact plug made of Si/SiGe/Si Feb. 29, 2000
6028348 Low thermal impedance integrated circuit Feb. 22, 2000
5969419 Structure comprising platinum layer bound to a surface of a silicon oxide layer Oct. 19, 1999
5920121 Methods and structures for gold interconnections in integrated circuits Jul. 6, 1999
5917243 Semiconductor device having ohmic electrode and method of manufacturing the same Jun. 29, 1999
5801444 Multilevel electronic structures containing copper layer and copper-semiconductor layers Sep. 1, 1998
5767536 II-VI group compound semiconductor device Jun. 16, 1998
5747878 Ohmic electrode, its fabrication method and semiconductor device May. 5, 1998
5563448 Ohmic contact structure of a highly integrated semiconductor device having two resistance control layers formed between a metal electrode and the substrate Oct. 8, 1996
5557146 Ohmic contact using binder paste with semiconductor material dispersed therein Sep. 17, 1996
5479052 Contact structure with capacitor for group III-V semiconductor devices Dec. 26, 1995
5396103 Graded composition ohmic contact for P-type II-VI semiconductors Mar. 7, 1995

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