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Class Information
Number: 257/742
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Combined with electrical contact or lead > Of specified material other than unalloyed aluminum > With a semiconductor conductivity substitution type dopant (e.g., germanium in the case of a gallium arsenide semiconductor) in a contact metal)
Description: Subject matter wherein the contact metal is doped with atoms of an element, e.g., germanium in the case of a semiconductor of gallium arsenide, which changes the conductivity of (i.e., introduces holes or electrons into) the semiconductor material to which the contact is connected.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7432559 |
Silicide formation on SiGe |
Oct. 7, 2008 |
| 7368822 |
Copper metalized ohmic contact electrode of compound device |
May. 6, 2008 |
| 7276794 |
Junction-isolated vias |
Oct. 2, 2007 |
| 7235469 |
Semiconductor device and method for manufacturing the same |
Jun. 26, 2007 |
| 6902258 |
LDMOS and CMOS integrated circuit and method of making |
Jun. 7, 2005 |
| 6879017 |
Methods and structures for metal interconnections in integrated circuits |
Apr. 12, 2005 |
| 6806572 |
Structure for contact formation using a silicon-germanium alloy |
Oct. 19, 2004 |
| 6784550 |
Thermal processing of metal alloys for an improved CMP process in integrated circuit fabrication |
Aug. 31, 2004 |
| 6767842 |
Implementation of Si-Ge HBT with CMOS process |
Jul. 27, 2004 |
| 6734515 |
Semiconductor light receiving element |
May. 11, 2004 |
| 6657303 |
Integrated circuit with low solubility metal-conductor interconnect cap |
Dec. 2, 2003 |
| 6541859 |
Methods and structures for silver interconnections in integrated circuits |
Apr. 1, 2003 |
| 6525425 |
Copper interconnects with improved electromigration resistance and low resistivity |
Feb. 25, 2003 |
| 6514395 |
Nanostructure-based high energy capacity material |
Feb. 4, 2003 |
| 6452228 |
Silicon carbide semiconductor device |
Sep. 17, 2002 |
| 6400008 |
Surface mount ic using silicon vias in an area array format or same size as die array |
Jun. 4, 2002 |
| 6334939 |
Nanostructure-based high energy capacity material |
Jan. 1, 2002 |
| 6326664 |
Transistor with ultra shallow tip and method of fabrication |
Dec. 4, 2001 |
| 6143655 |
Methods and structures for silver interconnections in integrated circuits |
Nov. 7, 2000 |
| 6100176 |
Methods and structures for gold interconnections in integrated circuits |
Aug. 8, 2000 |
| 6066876 |
Integrated circuit arrangement having at least one MOS transistor manufactured by use of a planar transistor layout |
May. 23, 2000 |
| 6030894 |
Method for manufacturing a semiconductor device having contact plug made of Si/SiGe/Si |
Feb. 29, 2000 |
| 5973396 |
Surface mount IC using silicon vias in an area array format or same size as die array |
Oct. 26, 1999 |
| 5920121 |
Methods and structures for gold interconnections in integrated circuits |
Jul. 6, 1999 |
| 5912509 |
MOS semiconductor device and method of manufacturing the same |
Jun. 15, 1999 |
| 5864149 |
Staggered thin film transistor with transparent electrodes and an improved ohmic contact structure |
Jan. 26, 1999 |
| 5852327 |
Semiconductor device |
Dec. 22, 1998 |
| 5825052 |
Semiconductor light emmitting device |
Oct. 20, 1998 |
| 5804846 |
Process for forming a self-aligned raised source/drain MOS device and device therefrom |
Sep. 8, 1998 |
| 5801444 |
Multilevel electronic structures containing copper layer and copper-semiconductor layers |
Sep. 1, 1998 |
| 5777388 |
Semiconductor device of the type sealed in glass having a silver-copper bonding layer between slugs and connection conductors |
Jul. 7, 1998 |
| 5710450 |
Transistor with ultra shallow tip and method of fabrication |
Jan. 20, 1998 |
| 5653019 |
Repairable chip bonding/interconnect process |
Aug. 5, 1997 |
| 5563448 |
Ohmic contact structure of a highly integrated semiconductor device having two resistance control layers formed between a metal electrode and the substrate |
Oct. 8, 1996 |
| 5481137 |
Semiconductor device with improved immunity to contact and conductor defects |
Jan. 2, 1996 |
| 5382808 |
Metal boride ohmic contact on diamond and method for making same |
Jan. 17, 1995 |
| 5336903 |
Selective deposition of doped silicon-germanium alloy on semiconductor substrate, and resulting structures |
Aug. 9, 1994 |
| 5323022 |
Platinum ohmic contact to p-type silicon carbide |
Jun. 21, 1994 |
| 5210431 |
Ohmic connection electrodes for p-type semiconductor diamonds |
May. 11, 1993 |
| 5192994 |
Au-Ge-Ni ohmic contact for Ga-Al-As compound semiconductor |
Mar. 9, 1993 |
| 5155560 |
Semiconductor index guided laser diode having both contacts on same surface |
Oct. 13, 1992 |
| 5126805 |
Junction field effect transistor with SiGe contact regions |
Jun. 30, 1992 |
| 4994892 |
Aluminum germanium ohmic contacts to gallium arsenide |
Feb. 19, 1991 |
| 4992847 |
Thin-film chip-to-substrate interconnect and methods for making same |
Feb. 12, 1991 |
| 4987562 |
Semiconductor layer structure having an aluminum-silicon alloy layer |
Jan. 22, 1991 |
| 4983536 |
Method of fabricating junction field effect transistor |
Jan. 8, 1991 |
| 4974055 |
Self-aligned interconnects for semiconductor devices |
Nov. 27, 1990 |
| 4965656 |
Semiconductor device |
Oct. 23, 1990 |
| 4945070 |
Method of making cmos with shallow source and drain junctions |
Jul. 31, 1990 |
| 4943839 |
Contact type image sensor |
Jul. 24, 1990 |
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