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Class Information
Number: 257/742
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Combined with electrical contact or lead > Of specified material other than unalloyed aluminum > With a semiconductor conductivity substitution type dopant (e.g., germanium in the case of a gallium arsenide semiconductor) in a contact metal)
Description: Subject matter wherein the contact metal is doped with atoms of an element, e.g., germanium in the case of a semiconductor of gallium arsenide, which changes the conductivity of (i.e., introduces holes or electrons into) the semiconductor material to which the contact is connected.

Sub-classes under this class:

Class Number Class Name Patents
257/743 For compound semiconductor material 83

Patents under this class:
1 2

Patent Number Title Of Patent Date Issued
8647935 Buried oxidation for enhanced mobility Feb. 11, 2014
8593817 Power semiconductor module and method for operating a power semiconductor module Nov. 26, 2013
8552548 Conductive pad on protruding through electrode semiconductor device Oct. 8, 2013
8344455 Semiconductor device and fabrication method for the same Jan. 1, 2013
8288849 Method for attaching wide bus memory and serial memory to a processor within a chip scale package footprint Oct. 16, 2012
8174104 Semiconductor arrangement having specially fashioned bond wires May. 8, 2012
8125082 Reduction of silicide formation temperature on SiGe containing substrates Feb. 28, 2012
7884478 Semiconductor apparatus Feb. 8, 2011
7432559 Silicide formation on SiGe Oct. 7, 2008
7368822 Copper metalized ohmic contact electrode of compound device May. 6, 2008
7276794 Junction-isolated vias Oct. 2, 2007
7235469 Semiconductor device and method for manufacturing the same Jun. 26, 2007
6902258 LDMOS and CMOS integrated circuit and method of making Jun. 7, 2005
6879017 Methods and structures for metal interconnections in integrated circuits Apr. 12, 2005
6806572 Structure for contact formation using a silicon-germanium alloy Oct. 19, 2004
6784550 Thermal processing of metal alloys for an improved CMP process in integrated circuit fabrication Aug. 31, 2004
6767842 Implementation of Si-Ge HBT with CMOS process Jul. 27, 2004
6734515 Semiconductor light receiving element May. 11, 2004
6657303 Integrated circuit with low solubility metal-conductor interconnect cap Dec. 2, 2003
6541859 Methods and structures for silver interconnections in integrated circuits Apr. 1, 2003
6525425 Copper interconnects with improved electromigration resistance and low resistivity Feb. 25, 2003
6514395 Nanostructure-based high energy capacity material Feb. 4, 2003
6452228 Silicon carbide semiconductor device Sep. 17, 2002
6400008 Surface mount ic using silicon vias in an area array format or same size as die array Jun. 4, 2002
6334939 Nanostructure-based high energy capacity material Jan. 1, 2002
6326664 Transistor with ultra shallow tip and method of fabrication Dec. 4, 2001
6143655 Methods and structures for silver interconnections in integrated circuits Nov. 7, 2000
6100176 Methods and structures for gold interconnections in integrated circuits Aug. 8, 2000
6066876 Integrated circuit arrangement having at least one MOS transistor manufactured by use of a planar transistor layout May. 23, 2000
6030894 Method for manufacturing a semiconductor device having contact plug made of Si/SiGe/Si Feb. 29, 2000
5973396 Surface mount IC using silicon vias in an area array format or same size as die array Oct. 26, 1999
5920121 Methods and structures for gold interconnections in integrated circuits Jul. 6, 1999
5912509 MOS semiconductor device and method of manufacturing the same Jun. 15, 1999
5864149 Staggered thin film transistor with transparent electrodes and an improved ohmic contact structure Jan. 26, 1999
5852327 Semiconductor device Dec. 22, 1998
5825052 Semiconductor light emmitting device Oct. 20, 1998
5804846 Process for forming a self-aligned raised source/drain MOS device and device therefrom Sep. 8, 1998
5801444 Multilevel electronic structures containing copper layer and copper-semiconductor layers Sep. 1, 1998
5777388 Semiconductor device of the type sealed in glass having a silver-copper bonding layer between slugs and connection conductors Jul. 7, 1998
5710450 Transistor with ultra shallow tip and method of fabrication Jan. 20, 1998
5653019 Repairable chip bonding/interconnect process Aug. 5, 1997
5563448 Ohmic contact structure of a highly integrated semiconductor device having two resistance control layers formed between a metal electrode and the substrate Oct. 8, 1996
5481137 Semiconductor device with improved immunity to contact and conductor defects Jan. 2, 1996
5382808 Metal boride ohmic contact on diamond and method for making same Jan. 17, 1995
5336903 Selective deposition of doped silicon-germanium alloy on semiconductor substrate, and resulting structures Aug. 9, 1994
5323022 Platinum ohmic contact to p-type silicon carbide Jun. 21, 1994
5210431 Ohmic connection electrodes for p-type semiconductor diamonds May. 11, 1993
5192994 Au-Ge-Ni ohmic contact for Ga-Al-As compound semiconductor Mar. 9, 1993
5155560 Semiconductor index guided laser diode having both contacts on same surface Oct. 13, 1992
5126805 Junction field effect transistor with SiGe contact regions Jun. 30, 1992

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