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Browse by Category: Main > Physics
Class Information
Number: 257/740
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Combined with electrical contact or lead > With means to prevent contact from penetrating shallow pn junction (e.g., prevention of aluminum "spiking")
Description: Subject matter wherein means are provided for preventing an electrical contact from penetrating into the relatively thin PN junction region.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8368219 Buried silicide local interconnect with sidewall spacers and method for making the same Feb. 5, 2013
8174118 Detection device and method for manufacturing the same May. 8, 2012
8174121 Semiconductor device and manufacturing method thereof May. 8, 2012
8049334 Buried silicide local interconnect with sidewall spacers and method for making the same Nov. 1, 2011
7893455 Semiconductor light emitting device with stress absorber, LED printhead, and image forming apparatus Feb. 22, 2011
RE41670 Sram cell fabrication with interlevel Dielectric planarization Sep. 14, 2010
7276796 Formation of oxidation-resistant seed layer for interconnect applications Oct. 2, 2007
7235844 Power composite integrated semiconductor device and manufacturing method thereof Jun. 26, 2007
6936906 Integration of barrier layer and seed layer Aug. 30, 2005
6888245 Semiconductor device May. 3, 2005
6866943 Bond pad structure comprising tungsten or tungsten compound layer on top of metallization level Mar. 15, 2005
6787908 Pad metallization over active circuitry Sep. 7, 2004
6649995 Semiconductor device and method of manufacturing the same Nov. 18, 2003
6624517 Low-resistance contact to silicon having a titanium silicide interface and an amorphous titanium carbonitride barrier layer Sep. 23, 2003
6528817 Semiconductor device and method for testing semiconductor device Mar. 4, 2003
6448652 Interconnect structure with a dielectric layer conforming to the perimeter of a wiring layer Sep. 10, 2002
6437372 Diffusion barrier spikes for III-V structures Aug. 20, 2002
6417564 Semiconductor element with metal layer Jul. 9, 2002
6400026 Semiconductor device with the copper containing aluminum alloy bond pad on an active region Jun. 4, 2002
6362526 Alloy barrier layers for semiconductors Mar. 26, 2002
6297535 Transistor having a gate dielectric which is substantially resistant to drain-side hot carrier injection Oct. 2, 2001
6222267 Semiconductor device and manufacturing thereof Apr. 24, 2001
6197628 Ruthenium silicide diffusion barrier layers and methods of forming same Mar. 6, 2001
6165917 Passivation of copper with ammonia-free silicon nitride and application to TFT/LCD Dec. 26, 2000
6130481 Semiconductor integrated circuit interconnection structures and method of making the interconnection structures Oct. 10, 2000
6111298 Etch stop layer formed within a multi-layered gate conductor to provide for reduction of channel length Aug. 29, 2000
6093966 Semiconductor device with a copper barrier layer and formation thereof Jul. 25, 2000
6081034 Low-resistance contact to silicon having a titanium silicide interface and an amorphous titanium carbonitride barrier layer Jun. 27, 2000
6056392 Method of producing recording head May. 2, 2000
6040604 Semiconductor component comprising an electrostatic-discharge protection device Mar. 21, 2000
5952721 Semiconductor device having oxygen-doped silicon layer so as to restrict diffusion from heavily doped silicon layer Sep. 14, 1999
5939787 Semiconductor device having a multi-layer contact structure Aug. 17, 1999
5852328 Semiconductor device and method of manufacturing the same Dec. 22, 1998
5831283 Passivation of copper with ammonia-free silicon nitride and application to TFT/LCD Nov. 3, 1998
5760476 Interconnect run between a first point and a second point in a semiconductor device for reducing electromigration failure Jun. 2, 1998
5710461 SRAM cell fabrication with interlevel dielectric planarization Jan. 20, 1998
5614767 Alignment accuracy check pattern Mar. 25, 1997
5570119 Multilayer device having integral functional element for use with an ink jet recording apparatus, and recording apparatus Oct. 29, 1996
5565708 Semiconductor device comprising composite barrier layer Oct. 15, 1996
5552341 Semiconductor device and method for manufacturing the same Sep. 3, 1996
5414301 High temperature interconnect system for an integrated circuit May. 9, 1995
5406121 Semiconductor device having improved interconnection wiring structure Apr. 11, 1995
5395457 Photovoltaic device and method of manufacturing the same Mar. 7, 1995
5380371 Photoelectric conversion element and fabrication method thereof Jan. 10, 1995
5378652 Method of making a through hole in multi-layer insulating films Jan. 3, 1995
5360996 Titanium nitride/titanium silicide multiple layer barrier with preferential (111) crystallographic orientation on titanium nitride surface Nov. 1, 1994
5355009 Semiconductor device and method of fabricating same Oct. 11, 1994
5321306 Method for manufacturing a semiconductor device Jun. 14, 1994
5319227 Low-leakage JFET having increased top gate doping concentration Jun. 7, 1994
5315150 Semiconductor device and method of manufacturing the same May. 24, 1994

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