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Class Information
Number: 257/740
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Combined with electrical contact or lead > With means to prevent contact from penetrating shallow pn junction (e.g., prevention of aluminum "spiking")
Description: Subject matter wherein means are provided for preventing an electrical contact from penetrating into the relatively thin PN junction region.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7276796 |
Formation of oxidation-resistant seed layer for interconnect applications |
Oct. 2, 2007 |
| 7235844 |
Power composite integrated semiconductor device and manufacturing method thereof |
Jun. 26, 2007 |
| 6936906 |
Integration of barrier layer and seed layer |
Aug. 30, 2005 |
| 6888245 |
Semiconductor device |
May. 3, 2005 |
| 6866943 |
Bond pad structure comprising tungsten or tungsten compound layer on top of metallization level |
Mar. 15, 2005 |
| 6787908 |
Pad metallization over active circuitry |
Sep. 7, 2004 |
| 6649995 |
Semiconductor device and method of manufacturing the same |
Nov. 18, 2003 |
| 6624517 |
Low-resistance contact to silicon having a titanium silicide interface and an amorphous titanium carbonitride barrier layer |
Sep. 23, 2003 |
| 6528817 |
Semiconductor device and method for testing semiconductor device |
Mar. 4, 2003 |
| 6448652 |
Interconnect structure with a dielectric layer conforming to the perimeter of a wiring layer |
Sep. 10, 2002 |
| 6437372 |
Diffusion barrier spikes for III-V structures |
Aug. 20, 2002 |
| 6417564 |
Semiconductor element with metal layer |
Jul. 9, 2002 |
| 6400026 |
Semiconductor device with the copper containing aluminum alloy bond pad on an active region |
Jun. 4, 2002 |
| 6362526 |
Alloy barrier layers for semiconductors |
Mar. 26, 2002 |
| 6297535 |
Transistor having a gate dielectric which is substantially resistant to drain-side hot carrier injection |
Oct. 2, 2001 |
| 6222267 |
Semiconductor device and manufacturing thereof |
Apr. 24, 2001 |
| 6197628 |
Ruthenium silicide diffusion barrier layers and methods of forming same |
Mar. 6, 2001 |
| 6165917 |
Passivation of copper with ammonia-free silicon nitride and application to TFT/LCD |
Dec. 26, 2000 |
| 6130481 |
Semiconductor integrated circuit interconnection structures and method of making the interconnection structures |
Oct. 10, 2000 |
| 6111298 |
Etch stop layer formed within a multi-layered gate conductor to provide for reduction of channel length |
Aug. 29, 2000 |
| 6093966 |
Semiconductor device with a copper barrier layer and formation thereof |
Jul. 25, 2000 |
| 6081034 |
Low-resistance contact to silicon having a titanium silicide interface and an amorphous titanium carbonitride barrier layer |
Jun. 27, 2000 |
| 6056392 |
Method of producing recording head |
May. 2, 2000 |
| 6040604 |
Semiconductor component comprising an electrostatic-discharge protection device |
Mar. 21, 2000 |
| 5952721 |
Semiconductor device having oxygen-doped silicon layer so as to restrict diffusion from heavily doped silicon layer |
Sep. 14, 1999 |
| 5939787 |
Semiconductor device having a multi-layer contact structure |
Aug. 17, 1999 |
| 5852328 |
Semiconductor device and method of manufacturing the same |
Dec. 22, 1998 |
| 5831283 |
Passivation of copper with ammonia-free silicon nitride and application to TFT/LCD |
Nov. 3, 1998 |
| 5760476 |
Interconnect run between a first point and a second point in a semiconductor device for reducing electromigration failure |
Jun. 2, 1998 |
| 5710461 |
SRAM cell fabrication with interlevel dielectric planarization |
Jan. 20, 1998 |
| 5614767 |
Alignment accuracy check pattern |
Mar. 25, 1997 |
| 5570119 |
Multilayer device having integral functional element for use with an ink jet recording apparatus, and recording apparatus |
Oct. 29, 1996 |
| 5565708 |
Semiconductor device comprising composite barrier layer |
Oct. 15, 1996 |
| 5552341 |
Semiconductor device and method for manufacturing the same |
Sep. 3, 1996 |
| 5414301 |
High temperature interconnect system for an integrated circuit |
May. 9, 1995 |
| 5406121 |
Semiconductor device having improved interconnection wiring structure |
Apr. 11, 1995 |
| 5395457 |
Photovoltaic device and method of manufacturing the same |
Mar. 7, 1995 |
| 5380371 |
Photoelectric conversion element and fabrication method thereof |
Jan. 10, 1995 |
| 5378652 |
Method of making a through hole in multi-layer insulating films |
Jan. 3, 1995 |
| 5360996 |
Titanium nitride/titanium silicide multiple layer barrier with preferential (111) crystallographic orientation on titanium nitride surface |
Nov. 1, 1994 |
| 5355009 |
Semiconductor device and method of fabricating same |
Oct. 11, 1994 |
| 5321306 |
Method for manufacturing a semiconductor device |
Jun. 14, 1994 |
| 5319227 |
Low-leakage JFET having increased top gate doping concentration |
Jun. 7, 1994 |
| 5315150 |
Semiconductor device and method of manufacturing the same |
May. 24, 1994 |
| 5309023 |
Contact structure for interconnection in semiconductor devices and manufacturing method thereof |
May. 3, 1994 |
| 5293073 |
Electrode structure of a semiconductor device which uses a copper wire as a bonding wire |
Mar. 8, 1994 |
| 5281854 |
Integrated circuit aluminum contact structure to silicon device regions |
Jan. 25, 1994 |
| 5260604 |
Semiconductor device with improved immunity to contact and conductor defects |
Nov. 9, 1993 |
| 5243219 |
Semiconductor device having impurity diffusion region formed in substrate beneath interlayer contact hole |
Sep. 7, 1993 |
| 5235210 |
Field effect transistor |
Aug. 10, 1993 |
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