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Class Information
Number: 257/728
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Housing or package > For high frequency (e.g., microwave) device
Description: Subject matter wherein the active solid-state device provided with a housing or package is a high frequency solid-state electronic device operating at high frequencies, such as microwave frequencies or above.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 5398169 |
Microelectronic package comprising metal housing grounded to board edge |
Mar. 14, 1995 |
| 5387888 |
High frequency ceramic multi-layer substrate |
Feb. 7, 1995 |
| 5378926 |
Bonding of integrated circuit chip to carrier using gold/tin eutectic alloy and refractory metal nitride barrier layer to block migration of tin through via holes |
Jan. 3, 1995 |
| 5376909 |
Device packaging |
Dec. 27, 1994 |
| 5371405 |
High-frequency high-power transistor |
Dec. 6, 1994 |
| 5363075 |
Multiple layer microwave integrated circuit module connector assembly |
Nov. 8, 1994 |
| 5359488 |
Packaging system for a standard electronic module |
Oct. 25, 1994 |
| 5358926 |
Epitaxial thin superconducting thallium-based copper oxide layers |
Oct. 25, 1994 |
| 5355102 |
HDI impedance matched microwave circuit assembly |
Oct. 11, 1994 |
| 5352998 |
Microwave integrated circuit having a passive circuit substrate mounted on a semiconductor circuit substrate |
Oct. 4, 1994 |
| 5334962 |
High-speed data supply pathway systems |
Aug. 2, 1994 |
| 5325072 |
High-frequency power amplifier device and high-frequency module including the same |
Jun. 28, 1994 |
| 5315156 |
Transistor device layout |
May. 24, 1994 |
| 5294897 |
Microwave IC package |
Mar. 15, 1994 |
| 5280194 |
Electrical apparatus with a metallic layer coupled to a lower region of a substrate and metallic layer coupled to a lower region of a semiconductor device |
Jan. 18, 1994 |
| 5258646 |
Package for microwave IC |
Nov. 2, 1993 |
| 5235300 |
Millimeter module package |
Aug. 10, 1993 |
| 5235208 |
Package for microwave integrated circuit |
Aug. 10, 1993 |
| 5221860 |
High speed laser package |
Jun. 22, 1993 |
| 5214845 |
Method for producing high speed integrated circuits |
Jun. 1, 1993 |
| 5206712 |
Building block approach to microwave modules |
Apr. 27, 1993 |
| 5202752 |
Monolithic integrated circuit device |
Apr. 13, 1993 |
| 5198824 |
High temperature co-fired ceramic integrated phased array packaging |
Mar. 30, 1993 |
| 5175611 |
Microwave integrated circuit package to eliminate alumina substrate cracking |
Dec. 29, 1992 |
| 5173767 |
Integrated circuit housing composed of three coated, dielectric plates |
Dec. 22, 1992 |
| 5170337 |
Low-inductance package for multiple paralleled devices operating at high frequency |
Dec. 8, 1992 |
| 5161000 |
High-frequency thick-film semiconductor circuit |
Nov. 3, 1992 |
| 5157479 |
Semiconductor device being capable of improving the packing density with a high heat radiation characteristics |
Oct. 20, 1992 |
| 5138436 |
Interconnect package having means for waveguide transmission of RF signals |
Aug. 11, 1992 |
| 5117068 |
Surface mount package for R.F. devices |
May. 26, 1992 |
| 5103291 |
Hermetically sealed package for electronic components |
Apr. 7, 1992 |
| 5089878 |
Low impedance packaging |
Feb. 18, 1992 |
| 5089880 |
Pressurized interconnection system for semiconductor chips |
Feb. 18, 1992 |
| 5075759 |
Surface mounting semiconductor device and method |
Dec. 24, 1991 |
| 5063177 |
Method of packaging microwave semiconductor components and integrated circuits |
Nov. 5, 1991 |
| 5051815 |
Laser beam emitting unit with high frequency noise shutoff |
Sep. 24, 1991 |
| 5049978 |
Conductively enclosed hybrid integrated circuit assembly using a silicon substrate |
Sep. 17, 1991 |
| 4933745 |
Microwave device package |
Jun. 12, 1990 |
| 4916515 |
Microwave circuit integrating |
Apr. 10, 1990 |
| 4905071 |
Monolithic series-shunt diode switch |
Feb. 27, 1990 |
| 4901041 |
High-performance package for monolithic microwave integrated circuits |
Feb. 13, 1990 |
| 4896205 |
Compact reduced parasitic resonant frequency pulsed power source at microwave frequencies |
Jan. 23, 1990 |
| 4872049 |
Encapsulated low-noise ultra-high frequency semiconductor device |
Oct. 3, 1989 |
| 4864384 |
Pre-matched module for an ultra-high frequency diode and a process for forming the biasing connection for the diode |
Sep. 5, 1989 |
| 4841353 |
Transistor devices for microwave oscillator elements |
Jun. 20, 1989 |
| 4839712 |
Compact combiner for semiconductor devices operating in the ultra-high frequency range |
Jun. 13, 1989 |
| 4835495 |
Diode device packaging arrangement |
May. 30, 1989 |
| 4827327 |
Integrated circuit device having stacked conductive layers connecting circuit elements therethrough |
May. 2, 1989 |
| 4812895 |
Hyperfrequency semiconductor device having external connections established by beam-leads |
Mar. 14, 1989 |
| 4811079 |
Method for the collective chemical cutting out of semiconductor devices, and a device cut out by this method |
Mar. 7, 1989 |
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