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Class Information
Number: 257/70
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Non-single crystal, or recrystallized, semiconductor material forms part of active junction (including field-induced active junction) > Field effect device in non-single crystal, or recrystallized, semiconductor material > In combination with device formed in single crystal semiconductor material (e.g., stacked fets) > Recrystallized semiconductor material
Description: Subject matter wherein the combined device contains a non-single semiconductor region of recrystallized material.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 5886366 |
Thin film type monolithic semiconductor device |
Mar. 23, 1999 |
| 5859443 |
Semiconductor device |
Jan. 12, 1999 |
| 5853045 |
Accumulator-exchanger device |
Dec. 29, 1998 |
| 5808321 |
Semiconductor device with recrystallized active area |
Sep. 15, 1998 |
| 5751037 |
Non-volatile memory cell having dual gate electrodes |
May. 12, 1998 |
| 5705839 |
Gate spacer to control the base width of a lateral bipolar junction transistor using SOI technology |
Jan. 6, 1998 |
| 5705829 |
Semiconductor device formed using a catalyst element capable of promoting crystallization |
Jan. 6, 1998 |
| 5670805 |
Controlled recrystallization of buried strap in a semiconductor memory device |
Sep. 23, 1997 |
| 5663579 |
Method of growing single semiconductor crystal and semiconductor device with single semiconductor crystal |
Sep. 2, 1997 |
| 5621224 |
Semiconductor device including a silicon film having an irregular surface |
Apr. 15, 1997 |
| 5614729 |
Top gate thin-film transistor |
Mar. 25, 1997 |
| 5610411 |
Silicon carbide bipolar semiconductor device with birdsbeak isolation structure |
Mar. 11, 1997 |
| 5608232 |
Semiconductor, semiconductor device, and method for fabricating the same |
Mar. 4, 1997 |
| 5606179 |
Insulated gate field effect transistor having a crystalline channel region |
Feb. 25, 1997 |
| 5581102 |
Transistor and method for manufacturing the same |
Dec. 3, 1996 |
| 5563426 |
Thin film transistor |
Oct. 8, 1996 |
| 5563428 |
Layered structure of a substrate, a dielectric layer and a single crystal layer |
Oct. 8, 1996 |
| 5517037 |
Polysilicon thin film with a particulate product of SiO.sub.x |
May. 14, 1996 |
| 5514880 |
Field effect thin-film transistor for an SRAM with reduced standby current |
May. 7, 1996 |
| 5444271 |
Conductivity-modulated semiconductor device with high breakdown voltage |
Aug. 22, 1995 |
| 5365080 |
Field effect transistor with crystallized channel region |
Nov. 15, 1994 |
| 5347146 |
Polysilicon thin film transistor of a liquid crystal display |
Sep. 13, 1994 |
| 5313076 |
Thin film transistor and semiconductor device including a laser crystallized semiconductor |
May. 17, 1994 |
| 5257224 |
Semiconductor device with multiple layers of memory cell arrays |
Oct. 26, 1993 |
| 5250818 |
Low temperature germanium-silicon on insulator thin-film transistor |
Oct. 5, 1993 |
| 5170227 |
Mask ROM having monocrystalline silicon conductors |
Dec. 8, 1992 |
| 4918510 |
Compact CMOS device structure |
Apr. 17, 1990 |
| 4916504 |
Three-dimensional CMOS inverter |
Apr. 10, 1990 |
| 4885624 |
Stacked metal-insulator semiconductor device |
Dec. 5, 1989 |
| 4822751 |
Method of producing a thin film semiconductor device |
Apr. 18, 1989 |
| 4799097 |
CMOS integrated devices in seeded islands |
Jan. 17, 1989 |
| 4768076 |
Recrystallized CMOS with different crystal planes |
Aug. 30, 1988 |
| 4754314 |
Split-level CMOS |
Jun. 28, 1988 |
| 4751557 |
Dram with FET stacked over capacitor |
Jun. 14, 1988 |
| 4746959 |
One-transistor memory cell for large scale integration dynamic semiconductor memories and the method of manufacture thereof |
May. 24, 1988 |
| 4713678 |
dRAM cell and method |
Dec. 15, 1987 |
| 4698659 |
Stacked complementary metal oxide semiconductor inverter |
Oct. 6, 1987 |
| 4689645 |
Current control device |
Aug. 25, 1987 |
| 4680609 |
Structure and fabrication of vertically integrated CMOS logic gates |
Jul. 14, 1987 |
| 4667217 |
Two bit vertically/horizontally integrated memory cell |
May. 19, 1987 |
| 4654121 |
Fabrication process for aligned and stacked CMOS devices |
Mar. 31, 1987 |
| 4635089 |
MIS-integrated semiconductor device |
Jan. 6, 1987 |
| 4603341 |
Stacked double dense read only memory |
Jul. 29, 1986 |
| 4570175 |
Three-dimensional semiconductor device with thin film monocrystalline member contacting substrate at a plurality of locations |
Feb. 11, 1986 |
| 4555721 |
Structure of stacked, complementary MOS field effect transistor circuits |
Nov. 26, 1985 |
| 4517583 |
Semiconductor integrated circuit including a fuse element |
May. 14, 1985 |
| 4489478 |
Process for producing a three-dimensional semiconductor device |
Dec. 25, 1984 |
| 4487635 |
Method of fabricating a multi-layer type semiconductor device including crystal growth by spirally directing energy beam |
Dec. 11, 1984 |
| 4476475 |
Stacked MOS transistor |
Oct. 9, 1984 |
| 4472729 |
Recrystallized three dimensional integrated circuit |
Sep. 18, 1984 |
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