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Class Information
Number: 257/657
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With specified impurity concentration gradient > Stepped profile
Description: Subject matter wherein the device includes at least one region of the same conductivity type (P or N) wherein the doping concentration varies abruptly (e.g., a P+ to P- junction).
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7432538 |
Field-effect transistor |
Oct. 7, 2008 |
| 7304350 |
Threshold voltage control layer in a semiconductor device |
Dec. 4, 2007 |
| 7268079 |
Method for fabricating a semiconductor having a field zone |
Sep. 11, 2007 |
| 7268040 |
Method of manufacturing a select transistor in a NAND flash memory |
Sep. 11, 2007 |
| 7262467 |
Over charge protection device |
Aug. 28, 2007 |
| 7091579 |
Power semiconductor rectifier having broad buffer structure and method of manufacturing thereof |
Aug. 15, 2006 |
| 6974983 |
Isolated FinFET P-channel/N-channel transistor pair |
Dec. 13, 2005 |
| 6960782 |
Electronic devices with fullerene layers |
Nov. 1, 2005 |
| 6888226 |
Semiconductor structure and method for improving its ability to withstand electrostatic discharge (ESD) and overloads |
May. 3, 2005 |
| 6777814 |
Semiconductor device |
Aug. 17, 2004 |
| 6750532 |
CMOS semiconductor device and method of manufacturing the same |
Jun. 15, 2004 |
| 6674152 |
Bipolar diode |
Jan. 6, 2004 |
| 6647542 |
Efficient fabrication process for dual well type structures |
Nov. 11, 2003 |
| 6642558 |
Method and apparatus of terminating a high voltage solid state device |
Nov. 4, 2003 |
| 6580141 |
Trench schottky rectifier |
Jun. 17, 2003 |
| 6479356 |
Method of manufacturing a semiconductive device with an enhanced junction breakdown strength |
Nov. 12, 2002 |
| 6351024 |
Power semiconductor diode |
Feb. 26, 2002 |
| 6180989 |
Selectively doped electrostatic discharge layer for an integrated circuit sensor |
Jan. 30, 2001 |
| 6172399 |
Formation of ultra-shallow semiconductor junction using microwave annealing |
Jan. 9, 2001 |
| 6172420 |
Silicon delta-doped gallium arsenide/indium arsenide heterojunction OHMIC contact |
Jan. 9, 2001 |
| 6081007 |
Semiconductor device comprising MIS transistor with high concentration channel injection region |
Jun. 27, 2000 |
| 6057592 |
Compound semiconductor epitaxial wafer |
May. 2, 2000 |
| 5977611 |
Power diode and hybrid diode, voltage limiter and freewheeling diode having the power diode |
Nov. 2, 1999 |
| 5932894 |
SiC semiconductor device comprising a pn junction |
Aug. 3, 1999 |
| 5899714 |
Fabrication of semiconductor structure having two levels of buried regions |
May. 4, 1999 |
| 5869886 |
Flip chip semiconductor mounting structure with electrically conductive resin |
Feb. 9, 1999 |
| 5831297 |
Structure of metal-insulator-semiconductor-like mutiple-negative-differential-resistance device |
Nov. 3, 1998 |
| 5811873 |
Diode having soft recovery characteristics over a wide range of operating conditions |
Sep. 22, 1998 |
| 5801836 |
Depletion region stopper for PN junction in silicon carbide |
Sep. 1, 1998 |
| 5773858 |
Power diode |
Jun. 30, 1998 |
| 5717244 |
Semiconductor device having layers with varying lifetime characteristics |
Feb. 10, 1998 |
| 5701020 |
Pseudomorphic step-doped-channel field-effect transistor |
Dec. 23, 1997 |
| 5670796 |
Semiconductor device consisting of a semiconductor material having a deep impurity level |
Sep. 23, 1997 |
| 5585658 |
Semiconductor device having diffusion regions formed with an ion beam absorber pattern |
Dec. 17, 1996 |
| 5581093 |
Contact structure of an interconnection layer for a semiconductor device and a multilayer interconnection SRAM |
Dec. 3, 1996 |
| 5557140 |
Process tolerant, high-voltage, bi-level capacitance varactor diode |
Sep. 17, 1996 |
| 5548143 |
Metal oxide semiconductor transistor and a method for manufacturing the same |
Aug. 20, 1996 |
| 5548148 |
MOS channel device with counterdoping of ion implant for reduced substrate sensitivity |
Aug. 20, 1996 |
| 5543655 |
Transistor structure for improved base-collector junction characteristics |
Aug. 6, 1996 |
| 5519243 |
Semiconductor device and manufacturing method thereof |
May. 21, 1996 |
| 5510648 |
Insulated gate semiconductor device and method of fabricating |
Apr. 23, 1996 |
| 5498892 |
Lightly doped drain ballast resistor |
Mar. 12, 1996 |
| 5493136 |
Field effect transistor and method of manufacturing the same |
Feb. 20, 1996 |
| 5448093 |
Micro MIS type FET and manufacturing process therefor |
Sep. 5, 1995 |
| 5428239 |
Semiconductor device having retrograde well and diffusion-type well |
Jun. 27, 1995 |
| 5422510 |
MOS transistor with non-uniform channel dopant profile |
Jun. 6, 1995 |
| 5408125 |
Semiconductor process for manufacturing semiconductor device with increased operating voltages |
Apr. 18, 1995 |
| 5404028 |
Electrical junction device with lightly doped buffer region to precisely locate a p-n junction |
Apr. 4, 1995 |
| 5401987 |
Self-cascoding CMOS device |
Mar. 28, 1995 |
| 5401994 |
Semiconductor device with a non-uniformly doped channel |
Mar. 28, 1995 |
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