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Class Information
Number: 257/657
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With specified impurity concentration gradient > Stepped profile
Description: Subject matter wherein the device includes at least one region of the same conductivity type (P or N) wherein the doping concentration varies abruptly (e.g., a P+ to P- junction).










Patents under this class:
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Patent Number Title Of Patent Date Issued
8575011 Method of fabricating a device with a concentration gradient and the corresponding device Nov. 5, 2013
8575683 Semiconductor device and method of fabricating the same Nov. 5, 2013
8420496 Semiconductor device and method of fabricating the same Apr. 16, 2013
8350366 Power semiconductor element with two-stage impurity concentration profile Jan. 8, 2013
8169285 Semiconductor device with integrated coils May. 1, 2012
8138580 Adhesive composition for electronic components, and adhesive sheet for electronic components using the same Mar. 20, 2012
8106401 Display device including metal lines provided above photodiode Jan. 31, 2012
7875961 Semiconductor substrate of GaAs and semiconductor device Jan. 25, 2011
7838970 Semiconductor component with high concentration doped zone embedded in emitter region Nov. 23, 2010
7800204 Semiconductor device and method of fabricating the same Sep. 21, 2010
7800201 Thinned wafer having stress dispersion parts and method for manufacturing semiconductor package using the same Sep. 21, 2010
7786553 Method of fabricating semiconductor device Aug. 31, 2010
7728409 Semiconductor device and method of manufacturing the same Jun. 1, 2010
7649244 Vertical semiconductor device having semiconductor zones for improved operability under dynamic processes Jan. 19, 2010
7635909 Semiconductor diode and IGBT Dec. 22, 2009
7598593 N-type ohmic electrode for n-type group III nitride semiconductor, semiconductor light-emitting device with the electrode, and method for forming n-type ohmic electrode Oct. 6, 2009
7432538 Field-effect transistor Oct. 7, 2008
7304350 Threshold voltage control layer in a semiconductor device Dec. 4, 2007
7268040 Method of manufacturing a select transistor in a NAND flash memory Sep. 11, 2007
7268079 Method for fabricating a semiconductor having a field zone Sep. 11, 2007
7262467 Over charge protection device Aug. 28, 2007
7091579 Power semiconductor rectifier having broad buffer structure and method of manufacturing thereof Aug. 15, 2006
6974983 Isolated FinFET P-channel/N-channel transistor pair Dec. 13, 2005
6960782 Electronic devices with fullerene layers Nov. 1, 2005
6888226 Semiconductor structure and method for improving its ability to withstand electrostatic discharge (ESD) and overloads May. 3, 2005
6777814 Semiconductor device Aug. 17, 2004
6750532 CMOS semiconductor device and method of manufacturing the same Jun. 15, 2004
6674152 Bipolar diode Jan. 6, 2004
6647542 Efficient fabrication process for dual well type structures Nov. 11, 2003
6642558 Method and apparatus of terminating a high voltage solid state device Nov. 4, 2003
6580141 Trench schottky rectifier Jun. 17, 2003
6479356 Method of manufacturing a semiconductive device with an enhanced junction breakdown strength Nov. 12, 2002
6351024 Power semiconductor diode Feb. 26, 2002
6180989 Selectively doped electrostatic discharge layer for an integrated circuit sensor Jan. 30, 2001
6172420 Silicon delta-doped gallium arsenide/indium arsenide heterojunction OHMIC contact Jan. 9, 2001
6172399 Formation of ultra-shallow semiconductor junction using microwave annealing Jan. 9, 2001
6081007 Semiconductor device comprising MIS transistor with high concentration channel injection region Jun. 27, 2000
6057592 Compound semiconductor epitaxial wafer May. 2, 2000
5977611 Power diode and hybrid diode, voltage limiter and freewheeling diode having the power diode Nov. 2, 1999
5932894 SiC semiconductor device comprising a pn junction Aug. 3, 1999
5899714 Fabrication of semiconductor structure having two levels of buried regions May. 4, 1999
5869886 Flip chip semiconductor mounting structure with electrically conductive resin Feb. 9, 1999
5831297 Structure of metal-insulator-semiconductor-like mutiple-negative-differential-resistance device Nov. 3, 1998
5811873 Diode having soft recovery characteristics over a wide range of operating conditions Sep. 22, 1998
5801836 Depletion region stopper for PN junction in silicon carbide Sep. 1, 1998
5773858 Power diode Jun. 30, 1998
5717244 Semiconductor device having layers with varying lifetime characteristics Feb. 10, 1998
5701020 Pseudomorphic step-doped-channel field-effect transistor Dec. 23, 1997
5670796 Semiconductor device consisting of a semiconductor material having a deep impurity level Sep. 23, 1997
5585658 Semiconductor device having diffusion regions formed with an ion beam absorber pattern Dec. 17, 1996

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