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Class Information
Number: 257/655
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With specified impurity concentration gradient
Description: Subject matter wherein the active solid-state device includes at least one region of semiconductor material with a specified profile or gradient of impurity doping concentration.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7439592 |
ESD protection for high voltage applications |
Oct. 21, 2008 |
| 7432538 |
Field-effect transistor |
Oct. 7, 2008 |
| 7317242 |
Semiconductor device including p-type silicon layer including implanted germanium |
Jan. 8, 2008 |
| 7268079 |
Method for fabricating a semiconductor having a field zone |
Sep. 11, 2007 |
| 7166890 |
Superjunction device with improved ruggedness |
Jan. 23, 2007 |
| 7138697 |
Structure for and method of fabricating a high-speed CMOS-compatible Ge-on-insulator photodetector |
Nov. 21, 2006 |
| 7091579 |
Power semiconductor rectifier having broad buffer structure and method of manufacturing thereof |
Aug. 15, 2006 |
| 7071504 |
Thin film transistor device and method of manufacturing the same |
Jul. 4, 2006 |
| 7064386 |
Thin film transistor and fabricating method thereof |
Jun. 20, 2006 |
| 7064399 |
Advanced CMOS using super steep retrograde wells |
Jun. 20, 2006 |
| 7064385 |
DMOS-transistor with lateral dopant gradient in drift region and method of producing the same |
Jun. 20, 2006 |
| 7061058 |
Forming a retrograde well in a transistor to enhance performance of the transistor |
Jun. 13, 2006 |
| 7045876 |
Amorphizing ion implant method for forming polysilicon emitter bipolar transistor |
May. 16, 2006 |
| 7034364 |
Reduced finger end MOSFET breakdown voltage (BV) for electrostatic discharge (ESD) protection |
Apr. 25, 2006 |
| 7030464 |
Semiconductor device and method of manufacturing the same |
Apr. 18, 2006 |
| 7005725 |
Discrete component comprising HF diodes in series with a common cathode |
Feb. 28, 2006 |
| 6956277 |
Diode junction poly fuse |
Oct. 18, 2005 |
| 6909157 |
Thermal nitrogen distribution method to improve uniformity of highly doped ultra-thin gate capacitors |
Jun. 21, 2005 |
| 6905891 |
Method for processing multiple semiconductor devices for test |
Jun. 14, 2005 |
| 6897500 |
CMOS image sensor |
May. 24, 2005 |
| 6891238 |
Semiconductor device and method of manufacturing the same |
May. 10, 2005 |
| 6888207 |
High voltage transistors with graded extension |
May. 3, 2005 |
| 6812523 |
Semiconductor wafer with ultra thin doping level formed by defect engineering |
Nov. 2, 2004 |
| 6806548 |
Semiconductor device |
Oct. 19, 2004 |
| 6787819 |
Retrograde well structure for a CMOS imager |
Sep. 7, 2004 |
| 6780685 |
Semiconductor device and manufacturing method thereof |
Aug. 24, 2004 |
| 6737722 |
Lateral transistor having graded base region, semiconductor integrated circuit and fabrication method thereof |
May. 18, 2004 |
| 6737731 |
Soft recovery power diode |
May. 18, 2004 |
| 6727171 |
Diamond pn junction diode and method for the fabrication thereof |
Apr. 27, 2004 |
| 6677626 |
Semiconductor device with alternating conductivity type layer and method of manufacturing the same |
Jan. 13, 2004 |
| 6674152 |
Bipolar diode |
Jan. 6, 2004 |
| 6639301 |
Semiconductor device and manufacturing method thereof |
Oct. 28, 2003 |
| 6627955 |
Structure and method of MOS transistor having increased substrate resistance |
Sep. 30, 2003 |
| 6624494 |
Method for fabricating a power semiconductor device having a floating island voltage sustaining layer |
Sep. 23, 2003 |
| 6559481 |
Semiconductor device for precise measurement of a forward voltage effect |
May. 6, 2003 |
| 6552414 |
Semiconductor device with selectively diffused regions |
Apr. 22, 2003 |
| 6541809 |
Method of making straight wall containers and the resultant containers |
Apr. 1, 2003 |
| 6528862 |
Bipolar transistor with a box-type germanium profile that lies outside of the emitter-base depletion region |
Mar. 4, 2003 |
| 6521954 |
Semiconductor device and manufacturing method thereof |
Feb. 18, 2003 |
| 6483129 |
Retrograde well structure for a CMOS imager |
Nov. 19, 2002 |
| 6472711 |
Semiconductor substrate and production method thereof |
Oct. 29, 2002 |
| 6469368 |
Method for producing a high-speed power diode with soft recovery, and a power diode produced using such a method |
Oct. 22, 2002 |
| 6462374 |
Semiconductor device and method for fabricating the same |
Oct. 8, 2002 |
| 6445014 |
Retrograde well structure for a CMOS imager |
Sep. 3, 2002 |
| 6429507 |
Electrical device including a leaded cell assembly |
Aug. 6, 2002 |
| 6410950 |
Geometrically coupled field-controlled-injection diode, voltage limiter and freewheeling diode having the geometrically coupled field-controlled-injection diode |
Jun. 25, 2002 |
| 6388295 |
Semiconductor device and method of manufacturing the same |
May. 14, 2002 |
| 6351023 |
Semiconductor device having ultra-sharp P-N junction and method of manufacturing the same |
Feb. 26, 2002 |
| 6351024 |
Power semiconductor diode |
Feb. 26, 2002 |
| 6329704 |
Ultra-shallow junction dopant layer having a peak concentration within a dielectric layer |
Dec. 11, 2001 |
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