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Class Information
Number: 257/654
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With specified shape of pn junction > Interdigitated pn junction or more heavily doped side of junction is concave
Description: Subject matter wherein the device has at least one pn junction which is interdigitated (i.e., in which plural layers or fingers of n type material alternate with plural layers or fingers of p-type material, with then-type layers or fingers being parts of a single unitary n region and the p-type layers or fingers being parts of a single unitary p-region).

Patents under this class:

Patent Number Title Of Patent Date Issued
8710633 Semiconductor overlapped PN structure and manufacturing method thereof Apr. 29, 2014
8710542 Semiconductor device Apr. 29, 2014
8405185 Semiconductor device and semiconductor module including the same Mar. 26, 2013
8242585 Semiconductor device and method for manufacturing the same Aug. 14, 2012
7893491 Semiconductor superjunction structure Feb. 22, 2011
7880201 Optical modulator using a serpentine dielectric layer between silicon layers Feb. 1, 2011
7781803 Semiconductor memory device Aug. 24, 2010
7772101 Phase-change memory device and method for manufacturing the same Aug. 10, 2010
7759769 Semiconductor structure of a high side driver Jul. 20, 2010
7589393 Semiconductor structure of a high side driver for two high voltage nodes with partially linked deep wells and method for manufacturing the same Sep. 15, 2009
7582922 Semiconductor device Sep. 1, 2009
7449749 Semiconductor device for limiting leakage current Nov. 11, 2008
7268040 Method of manufacturing a select transistor in a NAND flash memory Sep. 11, 2007
7078767 Semiconductor device for limiting leakage current Jul. 18, 2006
6943383 Diode and producing method thereof Sep. 13, 2005
6720595 Three-dimensional island pixel photo-sensor Apr. 13, 2004
6707105 Semiconductor device for limiting leakage current Mar. 16, 2004
6559481 Semiconductor device for precise measurement of a forward voltage effect May. 6, 2003
6518604 Diode with variable width metal stripes for improved protection against electrostatic discharge (ESD) current failure Feb. 11, 2003
6476495 Transistor which can minimize the DC resistance of the wiring and lead formed on a semiconductor chip Nov. 5, 2002
6433429 Copper conductive line with redundant liner and method of making Aug. 13, 2002
6310383 Thermoelectric element and method for manufacturing the same Oct. 30, 2001
6160306 Diode of semiconductor device and method for manufacturing the same Dec. 12, 2000
6147372 Layout of an image sensor for increasing photon induced current Nov. 14, 2000
6097063 Semiconductor device having a plurality of parallel drift regions Aug. 1, 2000
6015991 Asymmetrical field effect transistor Jan. 18, 2000
5899714 Fabrication of semiconductor structure having two levels of buried regions May. 4, 1999
5894164 High voltage semiconductor device Apr. 13, 1999
5850093 Uni-directional flash device Dec. 15, 1998
5773858 Power diode Jun. 30, 1998
5716880 Method for forming vertical polysilicon diode compatible with CMOS/BICMOS formation Feb. 10, 1998
5629558 Semiconductor diode integrated with bipolar/CMOS/DMOS technology May. 13, 1997
5523610 Photodiode array and method for manufacturing the same Jun. 4, 1996
5502329 Protection component for automobile circuit Mar. 26, 1996
5486718 High voltage planar edge termination structure and method of making same Jan. 23, 1996
5428240 Source/drain structural configuration for MOSFET integrated circuit devices Jun. 27, 1995
5343069 Electronic switch with a definite breakdown voltage Aug. 30, 1994
5323059 Vertical current flow semiconductor device utilizing wafer bonding Jun. 21, 1994
5256898 Semiconductor device with a different epitaxial thickness between adjacent circuit regions Oct. 26, 1993
5187380 Low capacitance X-ray radiation detector Feb. 16, 1993
5041896 Symmetrical blocking high voltage semiconductor device and method of fabrication Aug. 20, 1991
4839714 High-gain photodetectors made from NIPI mesas with selective lateral contacts Jun. 13, 1989
4785340 Semiconductor device having doping multilayer structure Nov. 15, 1988
4754310 High voltage semiconductor device Jun. 28, 1988
4570173 High-aspect-ratio hollow diffused regions in a semiconductor body Feb. 11, 1986
4486765 Avalanche photodetector including means for separating electrons and holes Dec. 4, 1984
4142201 Light-controlled thyristor with anode-base surface firing Feb. 27, 1979
3994012 Photovoltaic semi-conductor devices Nov. 23, 1976
3988757 Deep diode zeners Oct. 26, 1976

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