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Class Information
Number: 257/654
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With specified shape of pn junction > Interdigitated pn junction or more heavily doped side of junction is concave
Description: Subject matter wherein the device has at least one pn junction which is interdigitated (i.e., in which plural layers or fingers of n type material alternate with plural layers or fingers of p-type material, with then-type layers or fingers being parts of a single unitary n region and the p-type layers or fingers being parts of a single unitary p-region).
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7449749 |
Semiconductor device for limiting leakage current |
Nov. 11, 2008 |
| 7268040 |
Method of manufacturing a select transistor in a NAND flash memory |
Sep. 11, 2007 |
| 7078767 |
Semiconductor device for limiting leakage current |
Jul. 18, 2006 |
| 6943383 |
Diode and producing method thereof |
Sep. 13, 2005 |
| 6720595 |
Three-dimensional island pixel photo-sensor |
Apr. 13, 2004 |
| 6707105 |
Semiconductor device for limiting leakage current |
Mar. 16, 2004 |
| 6559481 |
Semiconductor device for precise measurement of a forward voltage effect |
May. 6, 2003 |
| 6518604 |
Diode with variable width metal stripes for improved protection against electrostatic discharge (ESD) current failure |
Feb. 11, 2003 |
| 6476495 |
Transistor which can minimize the DC resistance of the wiring and lead formed on a semiconductor chip |
Nov. 5, 2002 |
| 6433429 |
Copper conductive line with redundant liner and method of making |
Aug. 13, 2002 |
| 6310383 |
Thermoelectric element and method for manufacturing the same |
Oct. 30, 2001 |
| 6160306 |
Diode of semiconductor device and method for manufacturing the same |
Dec. 12, 2000 |
| 6147372 |
Layout of an image sensor for increasing photon induced current |
Nov. 14, 2000 |
| 6097063 |
Semiconductor device having a plurality of parallel drift regions |
Aug. 1, 2000 |
| 6015991 |
Asymmetrical field effect transistor |
Jan. 18, 2000 |
| 5899714 |
Fabrication of semiconductor structure having two levels of buried regions |
May. 4, 1999 |
| 5894164 |
High voltage semiconductor device |
Apr. 13, 1999 |
| 5850093 |
Uni-directional flash device |
Dec. 15, 1998 |
| 5773858 |
Power diode |
Jun. 30, 1998 |
| 5716880 |
Method for forming vertical polysilicon diode compatible with CMOS/BICMOS formation |
Feb. 10, 1998 |
| 5629558 |
Semiconductor diode integrated with bipolar/CMOS/DMOS technology |
May. 13, 1997 |
| 5523610 |
Photodiode array and method for manufacturing the same |
Jun. 4, 1996 |
| 5502329 |
Protection component for automobile circuit |
Mar. 26, 1996 |
| 5486718 |
High voltage planar edge termination structure and method of making same |
Jan. 23, 1996 |
| 5428240 |
Source/drain structural configuration for MOSFET integrated circuit devices |
Jun. 27, 1995 |
| 5343069 |
Electronic switch with a definite breakdown voltage |
Aug. 30, 1994 |
| 5323059 |
Vertical current flow semiconductor device utilizing wafer bonding |
Jun. 21, 1994 |
| 5256898 |
Semiconductor device with a different epitaxial thickness between adjacent circuit regions |
Oct. 26, 1993 |
| 5187380 |
Low capacitance X-ray radiation detector |
Feb. 16, 1993 |
| 5041896 |
Symmetrical blocking high voltage semiconductor device and method of fabrication |
Aug. 20, 1991 |
| 4839714 |
High-gain photodetectors made from NIPI mesas with selective lateral contacts |
Jun. 13, 1989 |
| 4785340 |
Semiconductor device having doping multilayer structure |
Nov. 15, 1988 |
| 4754310 |
High voltage semiconductor device |
Jun. 28, 1988 |
| 4570173 |
High-aspect-ratio hollow diffused regions in a semiconductor body |
Feb. 11, 1986 |
| 4486765 |
Avalanche photodetector including means for separating electrons and holes |
Dec. 4, 1984 |
| 4142201 |
Light-controlled thyristor with anode-base surface firing |
Feb. 27, 1979 |
| 3994012 |
Photovoltaic semi-conductor devices |
Nov. 23, 1976 |
| 3988757 |
Deep diode zeners |
Oct. 26, 1976 |
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