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Class Information
Number: 257/652
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With means to control surface effects > Channel stop layer
Description: Subject matter wherein the means to control surface effects comprises a channel stop region (i.e., a region of heavy doping concentration in the underlying semiconductor surface to prevent inversion of the surface by formation of a layer of induced minority carriers).

Patents under this class:
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Patent Number Title Of Patent Date Issued
8138581 Semiconductor device with channel stop trench and method Mar. 20, 2012
7872316 Semiconductor device and method of manufacturing semiconductor device Jan. 18, 2011
7816229 Semiconductor device with channel stop trench and method Oct. 19, 2010
7759194 Electrically programmable device with embedded EEPROM and method for making thereof Jul. 20, 2010
7220994 In plane switching mode liquid crystal display device May. 22, 2007
7151306 Electronic part, and electronic part mounting element and an process for manufacturing such the articles Dec. 19, 2006
7042049 Composite etching stop in semiconductor process integration May. 9, 2006
6953961 DRAM structure and fabricating method thereof Oct. 11, 2005
6924228 Method of forming a via contact structure using a dual damascene technique Aug. 2, 2005
6914320 Bilayer HDP CVD/PE CVD cap in advanced BEOL interconnect structures and method thereof Jul. 5, 2005
6887783 Bilayer HDP CVD/PE CVD cap in advance BEOL interconnect structures and method thereof May. 3, 2005
6667553 H:SiOC coated substrates Dec. 23, 2003
6593655 Method for producing hydrogenated silicon oxycarbide films having low dielectric constant Jul. 15, 2003
6563197 MOSgated device termination with guard rings under field plate May. 13, 2003
6518635 Semiconductor device and manufacturing method thereof Feb. 11, 2003
6501155 Semiconductor apparatus and process for manufacturing the same Dec. 31, 2002
6465867 Amorphous and gradated barrier layer for integrated circuit interconnects Oct. 15, 2002
6452285 Fabrication of standard defects in contacts Sep. 17, 2002
6333548 Semiconductor device with etch stopping film Dec. 25, 2001
6215167 Power semiconductor device employing field plate and manufacturing method thereof Apr. 10, 2001
6211541 Article for de-embedding parasitics in integrated circuits Apr. 3, 2001
6194750 Integrated circuit comprising means for high frequency signal transmission Feb. 27, 2001
6153920 Process for controlling dopant diffusion in a semiconductor layer and semiconductor device formed thereby Nov. 28, 2000
6084263 Power device having high breakdown voltage and method of manufacturing the same Jul. 4, 2000
6064110 Digital circuit with transistor geometry and channel stops providing camouflage against reverse engineering May. 16, 2000
6054752 Semiconductor device Apr. 25, 2000
5726469 Surface voltage sustaining structure for semiconductor devices Mar. 10, 1998
5712492 Transistor for checking radiation-hardened transistor Jan. 27, 1998
5641982 High voltage mosfet with an improved channel stopper structure Jun. 24, 1997
5631496 Semiconductor component having a passivation layer and method for manufacturing same May. 20, 1997
5541435 Integration of high voltage lateral MOS devices in low voltage CMOS architecture using CMOS-compatible process steps Jul. 30, 1996
5508555 Thin film field effect transistor having a doped sub-channel region Apr. 16, 1996
5483096 Photo sensor Jan. 9, 1996
5350942 Low resistance silicided substrate contact Sep. 27, 1994
5311052 Planar semiconductor component with stepped channel stopper electrode May. 10, 1994
5298789 Semiconductor component for a high blocking bias Mar. 29, 1994
5298770 Power switching MOS transistor Mar. 29, 1994
5262672 Apparatus for improvement of interconnection capacitance Nov. 16, 1993
5192993 Semiconductor device having improved element isolation area Mar. 9, 1993
5159428 Sidewall-sealed poly-buffered LOCOS isolation Oct. 27, 1992
5107320 Method and apparatus for improvement of interconnection capacitance Apr. 21, 1992
5049964 Bipolar transistor and method of manufacturing the same Sep. 17, 1991
4972242 Silicon avalanche photodiode with low multiplication noise Nov. 20, 1990
4816882 Power MOS transistor with equipotential ring Mar. 28, 1989
4753896 Sidewall channel stop process Jun. 28, 1988
4729964 Method of forming twin doped regions of the same depth by high energy implant Mar. 8, 1988
4717683 CMOS process Jan. 5, 1988
4691224 Planar semiconductor device with dual conductivity insulating layers over guard rings Sep. 1, 1987
4666556 Trench sidewall isolation by polysilicon oxidation May. 19, 1987
4618875 Darlington transistor circuit Oct. 21, 1986

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