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Class Information
Number: 257/651
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With means to control surface effects > Insulating coating > Details of insulating layer electrical charge (e.g., negative insulator layer charge)
Description: Subject matter wherein the electrical charge characteristics of an insulating layer are specified.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7211878 |
Semiconductor nonvolatile memory, method of recording data in the semiconductor nonvolatile memory and method of reading data from the semiconductor nonvolatile memory |
May. 1, 2007 |
| 7202137 |
Process for producing an integrated electronic circuit comprising superposed components and integrated electronic circuit thus obtained |
Apr. 10, 2007 |
| 7087969 |
Complementary field effect transistor and its manufacturing method |
Aug. 8, 2006 |
| 6960834 |
Semiconductor device having multi-layer interconnection structure and method of manufacturing the same |
Nov. 1, 2005 |
| 6956262 |
Charge trapping pull up element |
Oct. 18, 2005 |
| 6911378 |
Stabilization of fluorine-containing dielectric materials in a metal insulator wiring structure |
Jun. 28, 2005 |
| 6888204 |
Semiconductor devices, and methods for same |
May. 3, 2005 |
| 6737734 |
Structure and method for securing bussing leads |
May. 18, 2004 |
| 6727515 |
Insulation film forming material, insulation film, method for forming the insulation film, and semiconductor device |
Apr. 27, 2004 |
| 6593615 |
Dielectric gap fill process that effectively reduces capacitance between narrow metal lines using HDP-CVD |
Jul. 15, 2003 |
| 6462394 |
Device configured to avoid threshold voltage shift in a dielectric film |
Oct. 8, 2002 |
| 6396122 |
Method for fabricating on-chip inductors and related structure |
May. 28, 2002 |
| 6391805 |
High-pressure anneal process for integrated circuits |
May. 21, 2002 |
| 6232643 |
Memory using insulator traps |
May. 15, 2001 |
| 6211537 |
LED array |
Apr. 3, 2001 |
| 6130172 |
Radiation hardened dielectric for EEPROM |
Oct. 10, 2000 |
| 6117749 |
Modification of interfacial fields between dielectrics and semiconductors |
Sep. 12, 2000 |
| 6091082 |
Electrostatic discharge protection for integrated circuit sensor passivation |
Jul. 18, 2000 |
| 6060767 |
Semiconductor device having fluorine bearing sidewall spacers and method of manufacture thereof |
May. 9, 2000 |
| 6023093 |
Deuterated direlectric and polysilicon film-based semiconductor devices and method of manufacture thereof |
Feb. 8, 2000 |
| 5965918 |
Semiconductor device including field effect transistor |
Oct. 12, 1999 |
| 5936291 |
Thin film transistor and method for fabricating the same |
Aug. 10, 1999 |
| 5808353 |
Radiation hardened dielectric for EEPROM |
Sep. 15, 1998 |
| 5767548 |
Semiconductor component with embedded fixed charges to provide increased high breakdown voltage |
Jun. 16, 1998 |
| 5629531 |
Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures |
May. 13, 1997 |
| 5625208 |
Method for using a charge injection transistor |
Apr. 29, 1997 |
| 5578867 |
Passivation method and structure using hard ceramic materials or the like |
Nov. 26, 1996 |
| 5523597 |
Electronic device achieving a reduction in alpha particle emissions from boron-based compounds essentially free of boron-10 |
Jun. 4, 1996 |
| 5449938 |
MOS-controlled power semiconductor component |
Sep. 12, 1995 |
| 5406116 |
Dopant implant for conductive charge leakage layer for use with voltage contrast |
Apr. 11, 1995 |
| 5369300 |
Multilayer metallization for silicon semiconductor devices including a diffusion barrier formed of amorphous tungsten/silicon |
Nov. 29, 1994 |
| 5336925 |
Positive working polyamic acid/imide photoresist compositions and their use as dielectrics |
Aug. 9, 1994 |
| 5321283 |
High frequency JFET |
Jun. 14, 1994 |
| 5241214 |
Oxides and nitrides of metastabale group IV alloys and nitrides of Group IV elements and semiconductor devices formed thereof |
Aug. 31, 1993 |
| 4994869 |
NMOS transistor having inversion layer source/drain contacts |
Feb. 19, 1991 |
| 4868537 |
Doped SiO.sub.2 resistor and method of forming same |
Sep. 19, 1989 |
| 4853760 |
Semiconductor device having insulating layer including polyimide film |
Aug. 1, 1989 |
| 4837610 |
Insulation film for a semiconductor device |
Jun. 6, 1989 |
| 4827324 |
Implantation of ions into an insulating layer to increase planar pn junction breakdown voltage |
May. 2, 1989 |
| 4799100 |
Method and apparatus for increasing breakdown of a planar junction |
Jan. 17, 1989 |
| 4484214 |
pn Junction device with glass moats and a channel stopper region of greater depth than the base pn junction depth |
Nov. 20, 1984 |
| 4402761 |
Method of making self-aligned gate MOS device having small channel lengths |
Sep. 6, 1983 |
| 4297782 |
Method of manufacturing semiconductor devices |
Nov. 3, 1981 |
| 4266986 |
Passivation of defects in laser annealed semiconductors |
May. 12, 1981 |
| 4258077 |
Method of ion implantation into a semiconductor substrate provided with an insulating film |
Mar. 24, 1981 |
| 4184896 |
Surface barrier tailoring of semiconductor devices utilizing scanning electron microscope produced ionizing radiation |
Jan. 22, 1980 |
| 4000505 |
Thin oxide MOS solar cells |
Dec. 28, 1976 |
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