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Class Information
Number: 257/651
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With means to control surface effects > Insulating coating > Details of insulating layer electrical charge (e.g., negative insulator layer charge)
Description: Subject matter wherein the electrical charge characteristics of an insulating layer are specified.

Patents under this class:
1 2

Patent Number Title Of Patent Date Issued
8507894 Control and readout of electron or hole spin Aug. 13, 2013
8378465 Method and apparatus for optical modulation Feb. 19, 2013
8035200 Neutralization of trapped charge in a charge accumulation layer of a semiconductor structure Oct. 11, 2011
7939904 Semiconductor device and method of manufacturing the same May. 10, 2011
7804205 Electret device and electrostatic operating apparatus Sep. 28, 2010
7709874 Semiconductor device having a split gate structure with a recessed top face electrode May. 4, 2010
7525171 Semiconductor device and a method of manufacturing the same Apr. 28, 2009
7521764 One-time programmable memory device Apr. 21, 2009
7211878 Semiconductor nonvolatile memory, method of recording data in the semiconductor nonvolatile memory and method of reading data from the semiconductor nonvolatile memory May. 1, 2007
7202137 Process for producing an integrated electronic circuit comprising superposed components and integrated electronic circuit thus obtained Apr. 10, 2007
7087969 Complementary field effect transistor and its manufacturing method Aug. 8, 2006
6960834 Semiconductor device having multi-layer interconnection structure and method of manufacturing the same Nov. 1, 2005
6956262 Charge trapping pull up element Oct. 18, 2005
6911378 Stabilization of fluorine-containing dielectric materials in a metal insulator wiring structure Jun. 28, 2005
6888204 Semiconductor devices, and methods for same May. 3, 2005
6737734 Structure and method for securing bussing leads May. 18, 2004
6727515 Insulation film forming material, insulation film, method for forming the insulation film, and semiconductor device Apr. 27, 2004
6593615 Dielectric gap fill process that effectively reduces capacitance between narrow metal lines using HDP-CVD Jul. 15, 2003
6462394 Device configured to avoid threshold voltage shift in a dielectric film Oct. 8, 2002
6396122 Method for fabricating on-chip inductors and related structure May. 28, 2002
6391805 High-pressure anneal process for integrated circuits May. 21, 2002
6232643 Memory using insulator traps May. 15, 2001
6211537 LED array Apr. 3, 2001
6130172 Radiation hardened dielectric for EEPROM Oct. 10, 2000
6117749 Modification of interfacial fields between dielectrics and semiconductors Sep. 12, 2000
6091082 Electrostatic discharge protection for integrated circuit sensor passivation Jul. 18, 2000
6060767 Semiconductor device having fluorine bearing sidewall spacers and method of manufacture thereof May. 9, 2000
6023093 Deuterated direlectric and polysilicon film-based semiconductor devices and method of manufacture thereof Feb. 8, 2000
5965918 Semiconductor device including field effect transistor Oct. 12, 1999
5936291 Thin film transistor and method for fabricating the same Aug. 10, 1999
5808353 Radiation hardened dielectric for EEPROM Sep. 15, 1998
5767548 Semiconductor component with embedded fixed charges to provide increased high breakdown voltage Jun. 16, 1998
5629531 Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures May. 13, 1997
5625208 Method for using a charge injection transistor Apr. 29, 1997
5578867 Passivation method and structure using hard ceramic materials or the like Nov. 26, 1996
5523597 Electronic device achieving a reduction in alpha particle emissions from boron-based compounds essentially free of boron-10 Jun. 4, 1996
5449938 MOS-controlled power semiconductor component Sep. 12, 1995
5406116 Dopant implant for conductive charge leakage layer for use with voltage contrast Apr. 11, 1995
5369300 Multilayer metallization for silicon semiconductor devices including a diffusion barrier formed of amorphous tungsten/silicon Nov. 29, 1994
5336925 Positive working polyamic acid/imide photoresist compositions and their use as dielectrics Aug. 9, 1994
5321283 High frequency JFET Jun. 14, 1994
5241214 Oxides and nitrides of metastabale group IV alloys and nitrides of Group IV elements and semiconductor devices formed thereof Aug. 31, 1993
4994869 NMOS transistor having inversion layer source/drain contacts Feb. 19, 1991
4868537 Doped SiO.sub.2 resistor and method of forming same Sep. 19, 1989
4853760 Semiconductor device having insulating layer including polyimide film Aug. 1, 1989
4837610 Insulation film for a semiconductor device Jun. 6, 1989
4827324 Implantation of ions into an insulating layer to increase planar pn junction breakdown voltage May. 2, 1989
4799100 Method and apparatus for increasing breakdown of a planar junction Jan. 17, 1989
4484214 pn Junction device with glass moats and a channel stopper region of greater depth than the base pn junction depth Nov. 20, 1984
4402761 Method of making self-aligned gate MOS device having small channel lengths Sep. 6, 1983

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