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Class Information
Number: 257/650
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With means to control surface effects > Insulating coating > Insulating layer of glass
Description: Subject matter wherein the insulating layer is composed of glass.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7405466 |
Method of fabricating microelectromechanical system structures |
Jul. 29, 2008 |
| 7294909 |
Electronic package repair process |
Nov. 13, 2007 |
| 7250670 |
Semiconductor structure and fabricating method thereof |
Jul. 31, 2007 |
| 7208836 |
Integrated circuitry and a semiconductor processing method of forming a series of conductive lines |
Apr. 24, 2007 |
| 7180129 |
Semiconductor device including insulating layer |
Feb. 20, 2007 |
| 7164191 |
Low relative permittivity SiO.sub.x film including a porous material for use with a semiconductor device |
Jan. 16, 2007 |
| 7075187 |
Coating material over electrodes to support organic synthesis |
Jul. 11, 2006 |
| 7005724 |
Semiconductor device and a method of manufacture therefor |
Feb. 28, 2006 |
| 6979887 |
Support matrix with bonding channel for integrated semiconductors, and method for producing it |
Dec. 27, 2005 |
| 6943429 |
Wafer having alignment marks extending from a first to a second surface of the wafer |
Sep. 13, 2005 |
| 6917110 |
Semiconductor device comprising an interconnect structure with a modified low dielectric insulation layer |
Jul. 12, 2005 |
| 6890786 |
Wafer scale processing |
May. 10, 2005 |
| 6888224 |
Methods and systems for fabricating electrical connections to semiconductor structures incorporating low-k dielectric materials |
May. 3, 2005 |
| 6864561 |
Method and apparatus for reducing fixed charge in semiconductor device layers |
Mar. 8, 2005 |
| 6844258 |
Selective refractory metal and nitride capping |
Jan. 18, 2005 |
| 6844612 |
Low dielectric constant fluorine-doped silica glass film for use in integrated circuit chips and method of forming the same |
Jan. 18, 2005 |
| 6841830 |
Metal oxide semiconductor field effect transistors (MOSFETS) used in ink-jet head chips and method for making the same |
Jan. 11, 2005 |
| 6809344 |
Optical semiconductor device and method of fabricating the same |
Oct. 26, 2004 |
| 6809339 |
Semiconductor device and method for manufacturing same |
Oct. 26, 2004 |
| 6800928 |
Porous integrated circuit dielectric with decreased surface porosity |
Oct. 5, 2004 |
| 6791164 |
Stereolithographic methods for fabricating hermetic semiconductor device packages and semiconductor devices including stereolithographically fabricated hermetic packages |
Sep. 14, 2004 |
| 6787886 |
Semiconductor device and methods of fabricating the same |
Sep. 7, 2004 |
| 6774461 |
Method of reducing thick film stress of spin-on dielectric and the resulting sandwich dielectric structure |
Aug. 10, 2004 |
| 6765283 |
Semiconductor device with multi-layer interlayer dielectric film |
Jul. 20, 2004 |
| 6730619 |
Method of manufacturing insulating layer and semiconductor device including insulating layer |
May. 4, 2004 |
| 6707134 |
Semiconductor structure having an improved pre-metal dielectric stack and method for forming the same |
Mar. 16, 2004 |
| 6696745 |
Methods for use in forming a capacitor and structures resulting from same |
Feb. 24, 2004 |
| 6690084 |
Semiconductor device including insulation film and fabrication method thereof |
Feb. 10, 2004 |
| 6667540 |
Method and apparatus for reducing fixed charge in semiconductor device layers |
Dec. 23, 2003 |
| 6620534 |
Film having enhanced reflow characteristics at low thermal budget |
Sep. 16, 2003 |
| 6597042 |
Contact with germanium layer |
Jul. 22, 2003 |
| 6548873 |
Semiconductor device and manufacturing method of the same |
Apr. 15, 2003 |
| 6521980 |
Controlling packaging encapsulant leakage |
Feb. 18, 2003 |
| 6509628 |
IC chip |
Jan. 21, 2003 |
| 6509627 |
Flowable germanium doped silicate glass for use as a spacer oxide |
Jan. 21, 2003 |
| 6489667 |
Semiconductor device and method of manufacturing such device |
Dec. 3, 2002 |
| 6483173 |
Solution to black diamond film delamination problem |
Nov. 19, 2002 |
| 6476415 |
Wafer scale processing |
Nov. 5, 2002 |
| 6441466 |
Method and apparatus for reducing fixed charge in semiconductor device layers |
Aug. 27, 2002 |
| 6379785 |
Glass-coated substrates for high frequency applications |
Apr. 30, 2002 |
| 6335561 |
Semiconductor device having a passivation film |
Jan. 1, 2002 |
| 6320264 |
Interconnect wiring with sidewalls and inter-wiring insulation composed of fluorine |
Nov. 20, 2001 |
| 6320246 |
Semiconductor wafer assemblies |
Nov. 20, 2001 |
| 6300667 |
Semiconductor structure with air gaps formed between metal leads |
Oct. 9, 2001 |
| 6252298 |
Semiconductor chip package using flexible circuit board with central opening |
Jun. 26, 2001 |
| 6204551 |
Modified SOG coater's hot plate to improve SOG film quality |
Mar. 20, 2001 |
| 6190966 |
Process for fabricating semiconductor memory device with high data retention including silicon nitride etch stop layer formed at high temperature with low hydrogen ion concentration |
Feb. 20, 2001 |
| 6150029 |
Method of forming a film having enhanced reflow characteristics at low thermal budget |
Nov. 21, 2000 |
| 6127629 |
Hermetically sealed microelectronic device and method of forming same |
Oct. 3, 2000 |
| 6124626 |
Capacitor structures formed using excess oxygen containing material provided relative to electrodes thereof |
Sep. 26, 2000 |
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