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Class Information
Number: 257/65
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Non-single crystal, or recrystallized, semiconductor material forms part of active junction (including field-induced active junction) > Non-single crystal, or recrystallized, material containing non-dopant additive, or alloy of semiconductor materials (e.g., ge x si 1- x, polycrystalline silicon with dangling bond modifier)
Description: Subject matter wherein the non-single crystal semiconductor is an alloy or contains an additive other than an electrically active dopant, such as a dangling bond passivator or an additive to change the band gap of the amorphous semiconductor material (e.g., Six
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 5336903 |
Selective deposition of doped silicon-germanium alloy on semiconductor substrate, and resulting structures |
Aug. 9, 1994 |
| 5329140 |
Thin film transistor and its production method |
Jul. 12, 1994 |
| 5313076 |
Thin film transistor and semiconductor device including a laser crystallized semiconductor |
May. 17, 1994 |
| 5294812 |
Semiconductor device having identification region for carrying out failure analysis |
Mar. 15, 1994 |
| 5282993 |
Light-stable semiconductor material based on amorphous germanium and a method for its production |
Feb. 1, 1994 |
| 5281828 |
Thin film transistor with reduced leakage current |
Jan. 25, 1994 |
| 5266816 |
Polysilicon thin film semiconductor device containing nitrogen |
Nov. 30, 1993 |
| 5245201 |
Photoelectric converting device and image processing apparatus utilizing the same |
Sep. 14, 1993 |
| 5240876 |
Method of fabricating SOI wafer with SiGe as an etchback film in a BESOI process |
Aug. 31, 1993 |
| 5231297 |
Thin film transistor |
Jul. 27, 1993 |
| 5162892 |
Semiconductor device with polycrystalline silicon active region and hydrogenated passivation layer |
Nov. 10, 1992 |
| 5117114 |
High resolution amorphous silicon radiation detectors |
May. 26, 1992 |
| 5103284 |
Semiconductor with ordered clusters |
Apr. 7, 1992 |
| 5093704 |
Semiconductor device having a semiconductor region in which a band gap being continuously graded |
Mar. 3, 1992 |
| 5051786 |
Passivated polycrystalline semiconductors quantum well/superlattice structures fabricated thereof |
Sep. 24, 1991 |
| 5019887 |
Non-single crystalline photosensor with hydrogen and halogen |
May. 28, 1991 |
| 5007971 |
Pin heterojunction photovoltaic elements with polycrystal BP(H,F) semiconductor film |
Apr. 16, 1991 |
| 5006180 |
Pin heterojunction photovoltaic elements with polycrystal GaP (H,F) semiconductor film |
Apr. 9, 1991 |
| 4992839 |
Field effect thin film transistor having a semiconductor layer formed from a polycrystal silicon film containing hydrogen atom and halogen atom and process for the preparation of the same |
Feb. 12, 1991 |
| 4984034 |
Non-single-crystalline light emitting semiconductor device matrix with insulation |
Jan. 8, 1991 |
| 4982251 |
Semiconductor element |
Jan. 1, 1991 |
| 4972245 |
Infrared detecting element |
Nov. 20, 1990 |
| 4939561 |
Infrared sensor |
Jul. 3, 1990 |
| 4905072 |
Semiconductor element |
Feb. 27, 1990 |
| 4903102 |
Semiconductor photoelectric conversion device and method of making the same |
Feb. 20, 1990 |
| 4888062 |
Pin junction photovoltaic element having I-type semiconductor layer comprising non-single crystal material containing at least Zn, Se and H in an amount of 1 to 4 atomic % |
Dec. 19, 1989 |
| 4878097 |
Semiconductor photoelectric conversion device and method for making same |
Oct. 31, 1989 |
| 4868614 |
Light emitting semiconductor device matrix with non-single-crystalline semiconductor |
Sep. 19, 1989 |
| 4860069 |
Non-single-cry stal semiconductor light emitting device |
Aug. 22, 1989 |
| 4816082 |
Thin film solar cell including a spatially modulated intrinsic layer |
Mar. 28, 1989 |
| 4814842 |
Thin film transistor utilizing hydrogenated polycrystalline silicon |
Mar. 21, 1989 |
| 4766477 |
Semiconductor device including a semiconductor layer having a polycrystalline silicon film with selected atomic constituency |
Aug. 23, 1988 |
| 4755865 |
Means for stabilizing polycrystalline semiconductor layers |
Jul. 5, 1988 |
| 4740829 |
Semiconductor device having a thin layer comprising germanium atoms as a matrix with a restricted range of hydrogen atom concentration |
Apr. 26, 1988 |
| 4695859 |
Thin film light emitting diode, photonic circuit employing said diode imager employing said circuits |
Sep. 22, 1987 |
| 4682206 |
Thin ribbon of semiconductor material |
Jul. 21, 1987 |
| 4625224 |
Thin film transistor having polycrystalline silicon layer with 0.01 to 5 atomic % chlorine |
Nov. 25, 1986 |
| 4600801 |
Fluorinated, p-doped microcrystalline silicon semiconductor alloy material |
Jul. 15, 1986 |
| 4498092 |
Semiconductor photoelectric conversion device |
Feb. 5, 1985 |
| 4302763 |
Semiconductor device |
Nov. 24, 1981 |
| 4290825 |
Semiconductor devices containing protons and deuterons implanted regions |
Sep. 22, 1981 |
| 4254429 |
Hetero junction semiconductor device |
Mar. 3, 1981 |
| 4225367 |
Production of thin layers of polycrystalline silicon on a liquid layer containing a reducing agent |
Sep. 30, 1980 |
| 4062034 |
Semiconductor device having a hetero junction |
Dec. 6, 1977 |
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