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Class Information
Number: 257/65
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Non-single crystal, or recrystallized, semiconductor material forms part of active junction (including field-induced active junction) > Non-single crystal, or recrystallized, material containing non-dopant additive, or alloy of semiconductor materials (e.g., ge x si 1- x, polycrystalline silicon with dangling bond modifier)
Description: Subject matter wherein the non-single crystal semiconductor is an alloy or contains an additive other than an electrically active dopant, such as a dangling bond passivator or an additive to change the band gap of the amorphous semiconductor material (e.g., Six
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 6011275 |
Semiconductor device and method of manufacturing the same |
Jan. 4, 2000 |
| 5994718 |
Trench refill with selective polycrystalline materials |
Nov. 30, 1999 |
| 5986286 |
Semiconductor device and a method of manufacturing the same |
Nov. 16, 1999 |
| 5981868 |
Thin-film solar cell comprising thin-film light absorbing layer of chalcopyrite multi-element compound semiconductor |
Nov. 9, 1999 |
| 5982020 |
Deuterated bipolar transistor and method of manufacture thereof |
Nov. 9, 1999 |
| 5977560 |
Thin film transistor constructions with polycrystalline silicon-germanium alloy doped with carbon in the channel region |
Nov. 2, 1999 |
| 5962872 |
Semiconductor device and method for fabricating the same |
Oct. 5, 1999 |
| 5959313 |
Thin film semiconductor having a monocrystalline region containing carbon, nitrogen and oxygen and crystallization promotor metal component |
Sep. 28, 1999 |
| 5959314 |
Polycrystalline silicon from the crystallization of microcrystalline silicon |
Sep. 28, 1999 |
| 5955745 |
Semiconductor device having SiGe spacer under an active layer |
Sep. 21, 1999 |
| 5946560 |
Transistor and method of forming the same |
Aug. 31, 1999 |
| 5898188 |
Semiconductor device and method for its fabrication |
Apr. 27, 1999 |
| 5889292 |
Semiconductor device having an improved thin film transistor |
Mar. 30, 1999 |
| 5859443 |
Semiconductor device |
Jan. 12, 1999 |
| 5828084 |
High performance poly-SiGe thin film transistor |
Oct. 27, 1998 |
| 5814835 |
Semiconductor device and method for fabricating the same |
Sep. 29, 1998 |
| 5814834 |
Thin film semiconductor device |
Sep. 29, 1998 |
| 5808321 |
Semiconductor device with recrystallized active area |
Sep. 15, 1998 |
| 5804473 |
Thin film semiconductor device having a polycrystal active region and a fabrication process thereof |
Sep. 8, 1998 |
| 5801396 |
Inverted field-effect device with polycrystalline silicon/germanium channel |
Sep. 1, 1998 |
| 5789762 |
Semiconductor active matrix circuit |
Aug. 4, 1998 |
| 5783839 |
Semiconductor device having a GESC layer between silicon layers with triangular Ge concentration |
Jul. 21, 1998 |
| 5757024 |
Buried porous silicon-germanium layers in monocrystalline silicon lattices |
May. 26, 1998 |
| 5753541 |
Method of fabricating polycrystalline silicon-germanium thin film transistor |
May. 19, 1998 |
| 5744824 |
Semiconductor device method for producing the same and liquid crystal display including the same |
Apr. 28, 1998 |
| 5731626 |
Process for controlling dopant diffusion in a semiconductor layer and semiconductor layer formed thereby |
Mar. 24, 1998 |
| 5726459 |
GE-SI SOI MOS transistor and method of fabricating same |
Mar. 10, 1998 |
| 5710450 |
Transistor with ultra shallow tip and method of fabrication |
Jan. 20, 1998 |
| 5696388 |
Thin film transistors for the peripheral circuit portion and the pixel portion |
Dec. 9, 1997 |
| 5693961 |
Top-gate type thin film transistor with dangling bonds of silicon partly combined with hydrogen |
Dec. 2, 1997 |
| 5686734 |
Thin film semiconductor device and photoelectric conversion device using the thin film semiconductor device |
Nov. 11, 1997 |
| 5665981 |
Thin film transistors and method of promoting large crystal grain size in the formation of polycrystalline silicon alloy thin films |
Sep. 9, 1997 |
| 5610411 |
Silicon carbide bipolar semiconductor device with birdsbeak isolation structure |
Mar. 11, 1997 |
| 5608232 |
Semiconductor, semiconductor device, and method for fabricating the same |
Mar. 4, 1997 |
| 5599403 |
Semiconductor device containing microcrystalline germanium & method for producing the same |
Feb. 4, 1997 |
| 5581092 |
Gate insulated semiconductor device |
Dec. 3, 1996 |
| 5572044 |
Monocrystalline semiconductor commutator with grain boundry |
Nov. 5, 1996 |
| 5565690 |
Method for doping strained heterojunction semiconductor devices and structure |
Oct. 15, 1996 |
| 5565691 |
Thin film semiconductor system |
Oct. 15, 1996 |
| 5543635 |
Thin film transistor and method of formation |
Aug. 6, 1996 |
| 5517037 |
Polysilicon thin film with a particulate product of SiO.sub.x |
May. 14, 1996 |
| 5514879 |
Gate insulated field effect transistors and method of manufacturing the same |
May. 7, 1996 |
| 5512772 |
Semiconductor device having bipolar transistor and MOS transistor |
Apr. 30, 1996 |
| 5508533 |
Semiconductor device and method of fabricating same |
Apr. 16, 1996 |
| 5468974 |
Control and modification of dopant distribution and activation in polysilicon |
Nov. 21, 1995 |
| 5456762 |
Photoelectric conversion elements |
Oct. 10, 1995 |
| 5455431 |
Nonlinear optical materials and their manufacturing method |
Oct. 3, 1995 |
| 5449933 |
Ferroelectric thin film element |
Sep. 12, 1995 |
| 5391893 |
Nonsingle crystal semiconductor and a semiconductor device using such semiconductor |
Feb. 21, 1995 |
| 5371380 |
Si- and/or Ge-containing non-single crystalline semiconductor film with an average radius of 3.5 A or less as for microvoids contained therein and a microvoid density 1.times.10.sup.(19) (cm.s |
Dec. 6, 1994 |
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