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Class Information
Number: 257/65
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Non-single crystal, or recrystallized, semiconductor material forms part of active junction (including field-induced active junction) > Non-single crystal, or recrystallized, material containing non-dopant additive, or alloy of semiconductor materials (e.g., ge x si 1- x, polycrystalline silicon with dangling bond modifier)
Description: Subject matter wherein the non-single crystal semiconductor is an alloy or contains an additive other than an electrically active dopant, such as a dangling bond passivator or an additive to change the band gap of the amorphous semiconductor material (e.g., Six
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 6433269 |
Silicon photoelectric conversion device, method of fabricating the same and method of processing the same |
Aug. 13, 2002 |
| 6420219 |
Thin film transistors and method of forming thin film transistors |
Jul. 16, 2002 |
| 6392253 |
Semiconductor device with single crystal films grown on arrayed nucleation sites on amorphous and/or non-single crystal surfaces |
May. 21, 2002 |
| 6384316 |
Photovoltaic device |
May. 7, 2002 |
| 6346716 |
Semiconductor material having particular oxygen concentration and semiconductor device comprising the same |
Feb. 12, 2002 |
| 6333110 |
Functionalized nanocrystals as visual tissue-specific imaging agents, and methods for fluorescence imaging |
Dec. 25, 2001 |
| 6331718 |
Thin film circuit with improved carrier mobility |
Dec. 18, 2001 |
| 6326664 |
Transistor with ultra shallow tip and method of fabrication |
Dec. 4, 2001 |
| 6319607 |
Purification of functionalized fluorescent nanocrystals |
Nov. 20, 2001 |
| 6320202 |
Bottom-gated thin film transistors comprising germanium in a channel region |
Nov. 20, 2001 |
| 6316789 |
Semiconductor device and method for producing the same |
Nov. 13, 2001 |
| 6312617 |
Conductive isostructural compounds |
Nov. 6, 2001 |
| 6309701 |
Fluorescent nanocrystal-labeled microspheres for fluorescence analyses |
Oct. 30, 2001 |
| 6300659 |
Thin-film transistor and fabrication method for same |
Oct. 9, 2001 |
| 6294814 |
Cleaved silicon thin film with rough surface |
Sep. 25, 2001 |
| 6288412 |
Thin film transistors for display devices having two polysilicon active layers of different thicknesses |
Sep. 11, 2001 |
| 6285042 |
Active Matry Display |
Sep. 4, 2001 |
| 6242779 |
Selective silicide thin-film transistor having polysilicon active layers with crystallizing metal agent introduced only in the source/drain regions |
Jun. 5, 2001 |
| 6225667 |
Leaky lower interface for reduction of floating body effect in SOI devices |
May. 1, 2001 |
| 6225645 |
Semiconductor device and method of manufacturing the same |
May. 1, 2001 |
| 6218702 |
Microcrystal silicon film and its manufacturing method, and photoelectric conversion device and its manufacturing method |
Apr. 17, 2001 |
| 6211535 |
Method of manufacturing a semiconductor device |
Apr. 3, 2001 |
| 6211077 |
Method for forming polycrystal silicon film for semiconductor elements |
Apr. 3, 2001 |
| 6210998 |
Semiconductor device formed on an insulator and having a damaged portion at the interface between the insulator and the active layer |
Apr. 3, 2001 |
| 6184541 |
Thin film transistor and method of producing the same |
Feb. 6, 2001 |
| 6180982 |
Semiconductor device and method of making thereof |
Jan. 30, 2001 |
| 6172380 |
Semiconductor material |
Jan. 9, 2001 |
| 6153920 |
Process for controlling dopant diffusion in a semiconductor layer and semiconductor device formed thereby |
Nov. 28, 2000 |
| 6144041 |
Semiconductor device having an active layer with no grain boundary |
Nov. 7, 2000 |
| 6140667 |
Semiconductor thin film in semiconductor device having grain boundaries |
Oct. 31, 2000 |
| 6124602 |
Semiconductor circuit having a crystal growth in an active layer where a specific distance is established between a selected portion and where the growth starts to the active layer of the circ |
Sep. 26, 2000 |
| 6114038 |
Functionalized nanocrystals and their use in detection systems |
Sep. 5, 2000 |
| 6111267 |
CMOS integrated circuit including forming doped wells, a layer of intrinsic silicon, a stressed silicon germanium layer where germanium is between 25 and 50%, and another intrinsic silicon lay |
Aug. 29, 2000 |
| 6107639 |
Semiconductor device with rod like crystals and a recessed insulation layer |
Aug. 22, 2000 |
| 6104040 |
Liquid crystal display having a transistor with doped region in an active semiconductor layer |
Aug. 15, 2000 |
| 6103138 |
Silicon-system thin film, photovoltaic device, method for forming silicon-system thin film, and method for producing photovoltaic device |
Aug. 15, 2000 |
| 6100562 |
Method of manufacturing a semiconductor device |
Aug. 8, 2000 |
| 6097037 |
Thin film transistor having a continuous crystallized layer including the channel and portions of source and drain regions |
Aug. 1, 2000 |
| 6093934 |
Thin film transistor having grain boundaries with segregated oxygen and halogen elements |
Jul. 25, 2000 |
| 6093937 |
Semiconductor thin film, semiconductor device and manufacturing method thereof |
Jul. 25, 2000 |
| 6087679 |
Semiconductor thin film and semiconductor device |
Jul. 11, 2000 |
| 6084247 |
Semiconductor device having a catalyst enhanced crystallized layer |
Jul. 4, 2000 |
| 6078060 |
Active matrix display devices and methods of manufacturing the active matrix display devices |
Jun. 20, 2000 |
| 6072193 |
Thin-film transistor and semiconductor device using thin-film transistors |
Jun. 6, 2000 |
| 6054739 |
Semiconductor device having channel refractive index in first and second directions |
Apr. 25, 2000 |
| 6043512 |
Thin film semiconductor device and method for producing the same |
Mar. 28, 2000 |
| 6031249 |
CMOS semiconductor device having boron doped channel |
Feb. 29, 2000 |
| 6028264 |
Semiconductor having low concentration of carbon |
Feb. 22, 2000 |
| 6028333 |
Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors |
Feb. 22, 2000 |
| 6023088 |
Semiconductor device formed on an insulator and having a damaged portion at the interface between the insulator and the active layer |
Feb. 8, 2000 |
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