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Class Information
Number: 257/65
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Non-single crystal, or recrystallized, semiconductor material forms part of active junction (including field-induced active junction) > Non-single crystal, or recrystallized, material containing non-dopant additive, or alloy of semiconductor materials (e.g., ge x si 1- x, polycrystalline silicon with dangling bond modifier)
Description: Subject matter wherein the non-single crystal semiconductor is an alloy or contains an additive other than an electrically active dopant, such as a dangling bond passivator or an additive to change the band gap of the amorphous semiconductor material (e.g., Six
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7615471 |
Method for producing a tensioned layer on a substrate, and a layer structure |
Nov. 10, 2009 |
| 7612364 |
MOS devices with source/drain regions having stressed regions and non-stressed regions |
Nov. 3, 2009 |
| 7601984 |
Field effect transistor with amorphous oxide active layer containing microcrystals and gate electrode opposed to active layer through gate insulator |
Oct. 13, 2009 |
| 7579622 |
Fabrication of MEMS devices with spin-on glass |
Aug. 25, 2009 |
| 7566907 |
Thin film transistors and semiconductor constructions |
Jul. 28, 2009 |
| 7557375 |
Method for fabricating crystalline silicon |
Jul. 7, 2009 |
| 7528056 |
Low-cost strained SOI substrate for high-performance CMOS technology |
May. 5, 2009 |
| 7521711 |
Display device, method of production of the same, and projection type display device |
Apr. 21, 2009 |
| 7521712 |
Thin film semiconductor device |
Apr. 21, 2009 |
| 7495313 |
Germanium substrate-type materials and approach therefor |
Feb. 24, 2009 |
| 7442959 |
Semiconductor device having identification number, manufacturing method thereof and electronic device |
Oct. 28, 2008 |
| 7429752 |
Method and structure for forming strained SI for CMOS devices |
Sep. 30, 2008 |
| 7427779 |
Microstructure for formation of a silicon and germanium on insulator substrate of Si1-XGeX type |
Sep. 23, 2008 |
| 7427775 |
Fabricating strained channel epitaxial source/drain transistors |
Sep. 23, 2008 |
| 7427773 |
Layer transfer of low defect SiGe using an etch-back process |
Sep. 23, 2008 |
| 7417250 |
Strained-silicon device with different silicon thicknesses |
Aug. 26, 2008 |
| 7411214 |
High performance FET devices and methods thereof |
Aug. 12, 2008 |
| 7407421 |
Light source, optical pickup, and electronic apparatus |
Aug. 5, 2008 |
| 7385222 |
Thin film transistors and semiconductor constructions |
Jun. 10, 2008 |
| 7365410 |
Semiconductor structure having a metallic buffer layer and method for forming |
Apr. 29, 2008 |
| 7365362 |
Semiconductor device and method of fabricating semiconductor device using oxidation |
Apr. 29, 2008 |
| 7361592 |
Method for producing a component comprising at least one germanium-based element and component obtained by such a method |
Apr. 22, 2008 |
| 7335950 |
Semiconductor device and method of making thereof |
Feb. 26, 2008 |
| 7317207 |
Semiconductor device, method of making the same and liquid crystal display device |
Jan. 8, 2008 |
| 7315065 |
Method for fabricating SiGe-on-insulator (SGOI) and Ge-on-insulator (GOI) substrates |
Jan. 1, 2008 |
| 7307282 |
Thin film transistors and semiconductor device |
Dec. 11, 2007 |
| 7297978 |
Semiconductor thin film and semiconductor device |
Nov. 20, 2007 |
| 7262431 |
Semiconductor thin film forming method and semiconductor device |
Aug. 28, 2007 |
| 7259427 |
Semiconductor device and method of manufacturing the same |
Aug. 21, 2007 |
| 7235811 |
Thin film structure from LILAC annealing |
Jun. 26, 2007 |
| 7235812 |
Method of creating defect free high Ge content (>25%) SiGe-on-insulator (SGOI) substrates using wafer bonding techniques |
Jun. 26, 2007 |
| RE39640 |
Conductive isostructural compounds |
May. 22, 2007 |
| 7217952 |
Method of manufacturing a semiconductor device and semiconductor manufacturing apparatus |
May. 15, 2007 |
| 7205586 |
Semiconductor device having SiGe channel region |
Apr. 17, 2007 |
| 7199303 |
Optical energy conversion apparatus |
Apr. 3, 2007 |
| 7199399 |
Thin film transistor, thin film transistor substrate, and methods for manufacturing the same |
Apr. 3, 2007 |
| 7196400 |
Semiconductor device with enhanced orientation ratio and method of manufacturing same |
Mar. 27, 2007 |
| 7187057 |
Nitrogen controlled growth of dislocation loop in stress enhanced transistor |
Mar. 6, 2007 |
| 7157349 |
Method of manufacturing a semiconductor device with field isolation regions consisting of grooves filled with isolation material |
Jan. 2, 2007 |
| 7154118 |
Bulk non-planar transistor having strained enhanced mobility and methods of fabrication |
Dec. 26, 2006 |
| 7145175 |
Semiconductor circuit and method of fabricating the same |
Dec. 5, 2006 |
| 7141820 |
Structures with planar strained layers |
Nov. 28, 2006 |
| 7138668 |
Heterojunction diode with reduced leakage current |
Nov. 21, 2006 |
| 7115905 |
Semiconductor device including forming an amorphous silicon layer over and reacting with a silicide layer |
Oct. 3, 2006 |
| 7102153 |
Strained silicon forming method with reduction of threading dislocation density |
Sep. 5, 2006 |
| 7084460 |
Method for fabricating SiGe-on-insulator (SGOI) and Ge-on-insulator (GOI) substrates |
Aug. 1, 2006 |
| 7081387 |
Damascene gate multi-mesa MOSFET |
Jul. 25, 2006 |
| 7034337 |
Semiconductor device and method of manufacturing the same |
Apr. 25, 2006 |
| 7026193 |
Method of manufacturing a semiconductor device having TFTs with uniform characteristics |
Apr. 11, 2006 |
| 7023018 |
SiGe transistor with strained layers |
Apr. 4, 2006 |
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