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Browse by Category: Main > Physics
Class Information
Number: 257/649
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With means to control surface effects > Insulating coating > Insulating layer of silicon nitride or silicon oxynitride
Description: Subject matter wherein the insulating layer is composed of silicon nitride or of a mixture of silicon oxide and silicon nitride.










Patents under this class:
1 2 3 4 5 6 7

Patent Number Title Of Patent Date Issued
8669645 Semiconductor structures including polymer material permeated with metal oxide Mar. 11, 2014
8652950 C-rich carbon boron nitride dielectric films for use in electronic devices Feb. 18, 2014
8648446 Method for protecting a gate structure during contact formation Feb. 11, 2014
8633590 Semiconductor device and method for manufacturing the same Jan. 21, 2014
8629535 Mask for forming integrated circuit Jan. 14, 2014
8624329 Spacer-less low-K dielectric processes Jan. 7, 2014
8614501 Method of producing a layer of cavities Dec. 24, 2013
8525304 Semiconductor device Sep. 3, 2013
8524619 Method for fabricating semiconductor device including performing oxygen plasma treatment Sep. 3, 2013
8497191 Selective epitaxial growth method using halogen containing gate sidewall mask Jul. 30, 2013
8497556 Semiconductor devices with active semiconductor height variation Jul. 30, 2013
8476743 C-rich carbon boron nitride dielectric films for use in electronic devices Jul. 2, 2013
8471369 Method and apparatus for reducing plasma process induced damage in integrated circuits Jun. 25, 2013
8455872 Electronic devices having plastic substrates Jun. 4, 2013
8450834 Spacer structure of a field effect transistor with an oxygen-containing layer between two oxygen-sealing layers May. 28, 2013
8378465 Method and apparatus for optical modulation Feb. 19, 2013
8368170 Reducing device performance drift caused by large spacings between active regions Feb. 5, 2013
8362596 Engineered interconnect dielectric caps having compressive stress and interconnect structures containing same Jan. 29, 2013
8338919 Semiconductor device with strain Dec. 25, 2012
8330257 Thin film transistor substrate, method of manufacturing the same, and display apparatus having the same Dec. 11, 2012
8278739 Crystalline semiconductor film, semiconductor device, and method for manufacturing thereof Oct. 2, 2012
8278740 Method for manufacturing semiconductor device, semiconductor device, and electronic appliance Oct. 2, 2012
8269318 MOS device Sep. 18, 2012
8242584 Structure and method to create stress trench Aug. 14, 2012
8227877 Semiconductor bio-sensors and methods of manufacturing the same Jul. 24, 2012
8227838 Semiconductor device and method of manufacturing the same Jul. 24, 2012
8212286 Semiconductor light receiving element Jul. 3, 2012
8198708 System and method for improving CMOS compatible non volatile memory retention reliability Jun. 12, 2012
8183647 Semiconductor device and manufacturing method for silicon oxynitride film May. 22, 2012
8154107 Semiconductor device and a method of fabricating the device Apr. 10, 2012
8120124 Ultra thin TCS (SiCl.sub.4) cell nitride for DRAM capacitor with DCS (SiH.sub.2Cl.sub.2) interface seeding layer Feb. 21, 2012
8115271 Reducing device performance drift caused by large spacings between active regions Feb. 14, 2012
8102030 Semiconductor device with strain Jan. 24, 2012
8093640 Method and system for incorporating high voltage devices in an EEPROM Jan. 10, 2012
8053871 Implementation of a metal barrier in an integrated electronic circuit Nov. 8, 2011
8039929 Asymmetrically stressed CMOS FinFET Oct. 18, 2011
8035200 Neutralization of trapped charge in a charge accumulation layer of a semiconductor structure Oct. 11, 2011
8022442 Semiconductor device having STI with nitride liner and UV light shielding film Sep. 20, 2011
8013371 Ultra thin TCS (SiCl.sub.4) cell nitride for DRAM capacitor with DCS (SiH.sub.2Cl.sub.2) interface seeding layer Sep. 6, 2011
7999295 Stacked thin film transistor, non-volatile memory devices and methods for fabricating the same Aug. 16, 2011
7977202 Reducing device performance drift caused by large spacings between active regions Jul. 12, 2011
7977772 Hybrid metal fully silicided (FUSI) gate Jul. 12, 2011
7960764 Semiconductor device manufacturing method and semiconductor device Jun. 14, 2011
7960763 Semiconductor device and method of manufacturing the same Jun. 14, 2011
7948063 Semiconductor device with stress control film utilizing film thickness May. 24, 2011
7915646 Nitride semiconductor material, semiconductor element, and manufacturing method thereof Mar. 29, 2011
7902640 Dielectric layer and thin film transistor Mar. 8, 2011
7880243 Simple low power circuit structure with metal gate and high-k dielectric Feb. 1, 2011
7859088 Semiconductor device manufacturing method, wafer, and wafer manufacturing method Dec. 28, 2010
7838968 Semiconductor device and method of fabricating same Nov. 23, 2010

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