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Class Information
Number: 257/648
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With means to control surface effects > Insulating coating > Insulating layer recessed into semiconductor surface (e.g., locos oxide) > Combined with channel stop region in semiconductor
Description: Subject matter wherein the recessed insulating layer is combined with a channel stop region, i.e., a region of heavy doping concentration in the underlying semiconductor surface to prevent inversion of the surface by formation of a layer of induced minority carriers.










Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8674471 Semiconductor device supplying charging current to element to be charged Mar. 18, 2014
8664749 Component stacking using pre-formed adhesive films Mar. 4, 2014
8493171 Dual thin film precision resistance trimming Jul. 23, 2013
8242876 Dual thin film precision resistance trimming Aug. 14, 2012
8125036 Integrated circuit having an edge passivation and oxidation resistant layer and method Feb. 28, 2012
8089161 Semiconductor device and method of manufacturing the same Jan. 3, 2012
7834406 High-voltage metal-oxide-semiconductor device and method of manufacturing the same Nov. 16, 2010
7829420 Method of forming a channel termination region using a trench and a channel stopper ring Nov. 9, 2010
7666787 Grain growth promotion layer for semiconductor interconnect structures Feb. 23, 2010
7414823 Holder for use in semiconductor or liquid-crystal manufacturing device and semiconductor or liquid-crystal manufacturing device in which the holder is installed Aug. 19, 2008
7271468 High-voltage compatible, full-depleted CCD Sep. 18, 2007
7227254 Integrated circuit package Jun. 5, 2007
7163903 Method for making a semiconductor structure using silicon germanium Jan. 16, 2007
7038313 Semiconductor device and method of manufacturing the same May. 2, 2006
6953961 DRAM structure and fabricating method thereof Oct. 11, 2005
6894354 Trench isolated transistors, trench isolation structures, memory cells, and DRAMs May. 17, 2005
6770917 High-voltage diode Aug. 3, 2004
6639279 Semiconductor transistor having interface layer between semiconductor and insulating layers Oct. 28, 2003
6600524 Active matrix type liquid crystal display apparatus with silicon oxide at different portions Jul. 29, 2003
6518635 Semiconductor device and manufacturing method thereof Feb. 11, 2003
6501155 Semiconductor apparatus and process for manufacturing the same Dec. 31, 2002
6469329 Solid state image sensing device and method of producing the same Oct. 22, 2002
6373121 Silicon chip built-in inductor structure Apr. 16, 2002
6323539 High voltage integrated circuit, high voltage junction terminating structure, and high voltage MIS transistor Nov. 27, 2001
6320245 Radiation-hardened semiconductor device Nov. 20, 2001
6285073 Contact structure and method of formation Sep. 4, 2001
6249036 Stepper alignment mark formation with dual field oxide process Jun. 19, 2001
6242782 Circuit for providing isolation of integrated circuit active areas Jun. 5, 2001
6229202 Semiconductor package having downset leadframe for reducing package bow May. 8, 2001
6127708 Semiconductor device having an intervening region between channel stopper and diffusion region Oct. 3, 2000
6124628 High voltage integrated circuit, high voltage junction terminating structure, and high voltage MIS transistor Sep. 26, 2000
6091133 Assembly of a semiconductor device and paddleless lead frame having tape extending between the lead fingers Jul. 18, 2000
6046483 Planar isolation structure in an integrated circuit Apr. 4, 2000
6034410 MOSFET structure with planar surface Mar. 7, 2000
5973375 Camouflaged circuit structure with step implants Oct. 26, 1999
5874769 Mosfet isolation structure with planar surface Feb. 23, 1999
5841169 Integrated circuit containing devices dielectrically isolated and junction isolated from a substrate Nov. 24, 1998
5804884 Surface electrical field delimiting structure for an integrated circuit Sep. 8, 1998
5729049 Tape under frame for conventional-type IC package assembly Mar. 17, 1998
5696400 MOS-type semiconductor integrated circuit device Dec. 9, 1997
5693976 MOSFET device having denuded zones for forming alignment marks Dec. 2, 1997
5545907 Semiconductor device and method of forming the same Aug. 13, 1996
5541435 Integration of high voltage lateral MOS devices in low voltage CMOS architecture using CMOS-compatible process steps Jul. 30, 1996
5483096 Photo sensor Jan. 9, 1996
5401998 Trench isolation using doped sidewalls Mar. 28, 1995
5373177 Semiconductor device with improved electric charge storage characteristics Dec. 13, 1994
5365082 MOSFET cell array Nov. 15, 1994
5350941 Trench isolation structure having a trench formed in a LOCOS structure and a channel stop region on the sidewalls of the trench Sep. 27, 1994
5350942 Low resistance silicided substrate contact Sep. 27, 1994
H1287 Ion implanted diamond metal-insulator-semiconductor field effect transistor Feb. 1, 1994

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