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Class Information
Number: 257/647
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With means to control surface effects > Insulating coating > Insulating layer recessed into semiconductor surface (e.g., locos oxide)
Description: Subject matter wherein the insulating layer is recessed into the semiconductor surface.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 4506434 |
Method for production of semiconductor devices |
Mar. 26, 1985 |
| 4507158 |
Trench isolated transistors in semiconductor films |
Mar. 26, 1985 |
| 4506437 |
Process for and structure of high density VLSI circuits, having self-aligned gates and contacts for FET devices and conducting lines |
Mar. 26, 1985 |
| 4502201 |
Semiconductor integrated circuit device and fabrication method thereof |
Mar. 5, 1985 |
| 4501060 |
Dielectrically isolated semiconductor devices |
Feb. 26, 1985 |
| 4495025 |
Process for forming grooves having different depths using a single masking step |
Jan. 22, 1985 |
| 4494303 |
Method of making dielectrically isolated silicon devices |
Jan. 22, 1985 |
| 4484214 |
pn Junction device with glass moats and a channel stopper region of greater depth than the base pn junction depth |
Nov. 20, 1984 |
| 4477962 |
Process for and structure of high density VLSI circuits, having self-aligned gates and contacts for FET devices and conducting lines |
Oct. 23, 1984 |
| 4473940 |
Method of producing a semiconductor device |
Oct. 2, 1984 |
| 4459181 |
Semiconductor pattern definition by selective anodization |
Jul. 10, 1984 |
| 4450467 |
Gate turn-off thyristor with selective anode penetrating shorts |
May. 22, 1984 |
| RE31506 |
Method of manufacturing oxide isolated semiconductor device utilizing selective etching technique |
Jan. 24, 1984 |
| 4420874 |
Method of producing an IIL semiconductor device utilizing self-aligned thickened oxide patterns |
Dec. 20, 1983 |
| 4408387 |
Method for producing a bipolar transistor utilizing an oxidized semiconductor masking layer in conjunction with an anti-oxidation mask |
Oct. 11, 1983 |
| 4407696 |
Fabrication of isolation oxidation for MOS circuit |
Oct. 4, 1983 |
| 4400712 |
Static bipolar random access memory |
Aug. 23, 1983 |
| 4400411 |
Technique of silicon epitaxial refill |
Aug. 23, 1983 |
| 4396460 |
Method of forming groove isolation in a semiconductor device |
Aug. 2, 1983 |
| 4388635 |
High breakdown voltage semiconductor device |
Jun. 14, 1983 |
| 4380865 |
Method of forming dielectrically isolated silicon semiconductor materials utilizing porous silicon formation |
Apr. 26, 1983 |
| 4369565 |
Method of manufacturing a semiconductor device utilizing etch and refill to form isolation regions |
Jan. 25, 1983 |
| 4356211 |
Forming air-dielectric isolation regions in a monocrystalline silicon substrate by differential oxidation of polysilicon |
Oct. 26, 1982 |
| 4356056 |
Process for insulating the interconnections of integrated circuits |
Oct. 26, 1982 |
| 4340900 |
Mesa epitaxial diode with oxide passivated junction and plated heat sink |
Jul. 20, 1982 |
| 4335501 |
Manufacture of monolithic LED arrays for electroluminescent display devices |
Jun. 22, 1982 |
| 4331708 |
Method of fabricating narrow deep grooves in silicon |
May. 25, 1982 |
| 4326332 |
Method of making a high density V-MOS memory array |
Apr. 27, 1982 |
| 4310965 |
Process for producing a dielectric insulator separated substrate |
Jan. 19, 1982 |
| 4307180 |
Process of forming recessed dielectric regions in a monocrystalline silicon substrate |
Dec. 22, 1981 |
| 4304043 |
Process for preparing semiconductor device _by forming reinforcing regions to facilitate separation of pellets |
Dec. 8, 1981 |
| 4298881 |
Semiconductor device with double moat and double channel stoppers |
Nov. 3, 1981 |
| 4295924 |
Method for providing self-aligned conductor in a V-groove device |
Oct. 20, 1981 |
| 4293588 |
Method of manufacturing a semiconductor device using different etch rates |
Oct. 6, 1981 |
| 4283235 |
Dielectric isolation using shallow oxide and polycrystalline silicon utilizing selective oxidation |
Aug. 11, 1981 |
| 4277881 |
Process for fabrication of high density VLSI circuits, having self-aligned gates and contacts for FET devices and conducting lines |
Jul. 14, 1981 |
| 4278705 |
Sequentially annealed oxidation of silicon to fill trenches with silicon dioxide |
Jul. 14, 1981 |
| 4272308 |
Method of forming recessed isolation oxide layers |
Jun. 9, 1981 |
| 4271583 |
Fabrication of semiconductor devices having planar recessed oxide isolation region |
Jun. 9, 1981 |
| 4268952 |
Method for fabricating self-aligned high resolution non planar devices employing low resolution registration |
May. 26, 1981 |
| 4268537 |
Method for manufacturing a self-aligned contact in a grooved semiconductor surface |
May. 19, 1981 |
| 4264409 |
Contamination-free selective reactive ion etching or polycrystalline silicon against silicon dioxide |
Apr. 28, 1981 |
| 4255207 |
Fabrication of isolated regions for use in self-aligning device process utilizing selective oxidation |
Mar. 10, 1981 |
| 4240095 |
Grooving and glassivating method for semiconductor wafers |
Dec. 16, 1980 |
| 4238278 |
Polycrystalline silicon oxidation method for making shallow and deep isolation trenches |
Dec. 9, 1980 |
| 4236294 |
High performance bipolar device and method for making same |
Dec. 2, 1980 |
| 4236171 |
High power transistor having emitter pattern with symmetric lead connection pads |
Nov. 25, 1980 |
| 4233091 |
Method of manufacturing semiconductor devices having improved alignment marks |
Nov. 11, 1980 |
| 4231819 |
Dielectric isolation method using shallow oxide and polycrystalline silicon utilizing a preliminary etching step |
Nov. 4, 1980 |
| 4227975 |
Selective plasma etching of dielectric masks in the presence of native oxides of group III-V compound semiconductors |
Oct. 14, 1980 |
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