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Class Information
Number: 257/647
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With means to control surface effects > Insulating coating > Insulating layer recessed into semiconductor surface (e.g., locos oxide)
Description: Subject matter wherein the insulating layer is recessed into the semiconductor surface.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7612427 |
Apparatus for confining inductively coupled surface currents |
Nov. 3, 2009 |
| 7560389 |
Method for fabricating semiconductor element |
Jul. 14, 2009 |
| 7508053 |
Semiconductor MOS transistor device and method for making the same |
Mar. 24, 2009 |
| 7495318 |
Apparatus and method for improving AC coupling on circuit boards |
Feb. 24, 2009 |
| 7491622 |
Process of forming an electronic device including a layer formed using an inductively coupled plasma |
Feb. 17, 2009 |
| 7358596 |
Device isolation for semiconductor devices |
Apr. 15, 2008 |
| 7268402 |
Memory cell with trench-isolated transistor including first and second isolation trenches |
Sep. 11, 2007 |
| 7262489 |
Three-dimensionally formed circuit sheet, component and method for manufacturing the same |
Aug. 28, 2007 |
| RE39690 |
Enhanced planarization technique for an integrated circuit |
Jun. 12, 2007 |
| 7199450 |
Materials and method to seal vias in silicon substrates |
Apr. 3, 2007 |
| 7190051 |
Chip level hermetic and biocompatible electronics package using SOI wafers |
Mar. 13, 2007 |
| 7190045 |
Semiconductor device and method for fabricating the same |
Mar. 13, 2007 |
| 7067890 |
Thick oxide region in a semiconductor device |
Jun. 27, 2006 |
| 7009271 |
Memory device with an alternating Vss interconnection |
Mar. 7, 2006 |
| 7005712 |
Method for manufacturing a semiconductor device |
Feb. 28, 2006 |
| 6979878 |
Isolation structure having implanted silicon atoms at the top corner of the isolation trench filling vacancies and interstitial sites |
Dec. 27, 2005 |
| 6979876 |
Method for forming isolation layer of semiconductor device |
Dec. 27, 2005 |
| 6972242 |
Methods to fabricate semiconductor devices |
Dec. 6, 2005 |
| 6972477 |
Circuit device with conductive patterns separated by insulating resin-filled grooves |
Dec. 6, 2005 |
| 6940171 |
Multi-layer dielectric and method of forming same |
Sep. 6, 2005 |
| 6894354 |
Trench isolated transistors, trench isolation structures, memory cells, and DRAMs |
May. 17, 2005 |
| 6849928 |
Dual silicon-on-insulator device wafer die |
Feb. 1, 2005 |
| 6847098 |
Non-floating body device with enhanced performance |
Jan. 25, 2005 |
| 6812572 |
Bit line landing pad and borderless contact on bit line stud with localized etch stop layer formed in void region, and manufacturing method thereof |
Nov. 2, 2004 |
| 6809402 |
Reflowable-doped HDP film |
Oct. 26, 2004 |
| 6794719 |
HV-SOI LDMOS device with integrated diode to improve reliability and avalanche ruggedness |
Sep. 21, 2004 |
| 6740933 |
Semiconductor device having trench isolation structure and method of fabricating the same |
May. 25, 2004 |
| 6737707 |
Semiconductor device and manufacturing method thereof |
May. 18, 2004 |
| 6734524 |
Electronic component and method of manufacturing same |
May. 11, 2004 |
| 6723615 |
Semiconductor device and method of fabricating the same |
Apr. 20, 2004 |
| 6713822 |
Semiconductor device |
Mar. 30, 2004 |
| 6693341 |
Semiconductor device |
Feb. 17, 2004 |
| 6689665 |
Method of forming an STI feature while avoiding or reducing divot formation |
Feb. 10, 2004 |
| 6670260 |
Transistor with local insulator structure |
Dec. 30, 2003 |
| 6639279 |
Semiconductor transistor having interface layer between semiconductor and insulating layers |
Oct. 28, 2003 |
| 6611038 |
Semiconductor wafer isolation structure formed by field oxidation |
Aug. 26, 2003 |
| 6600524 |
Active matrix type liquid crystal display apparatus with silicon oxide at different portions |
Jul. 29, 2003 |
| 6525393 |
Semiconductor substrate having an isolation region |
Feb. 25, 2003 |
| 6518635 |
Semiconductor device and manufacturing method thereof |
Feb. 11, 2003 |
| 6514834 |
Method of manufacturing a semiconductor device having a low leakage current |
Feb. 4, 2003 |
| 6509651 |
Substrate-fluorescent LED |
Jan. 21, 2003 |
| 6504233 |
Semiconductor processing component |
Jan. 7, 2003 |
| 6489661 |
Method of manufacturing semiconductor device and semiconductor device |
Dec. 3, 2002 |
| 6437985 |
Disposable electronic chip device and process of manufacture |
Aug. 20, 2002 |
| 6433400 |
Semiconductor fabrication employing barrier atoms incorporated at the edges of a trench isolation structure |
Aug. 13, 2002 |
| 6373121 |
Silicon chip built-in inductor structure |
Apr. 16, 2002 |
| 6362510 |
Semiconductor topography having improved active device isolation and reduced dopant migration |
Mar. 26, 2002 |
| 6346737 |
Shallow trench isolation process particularly suited for high voltage circuits |
Feb. 12, 2002 |
| 6323540 |
Semiconductor processing method of forming a contact opening to a region adjacent a field isolation mass, and a semiconductor structure |
Nov. 27, 2001 |
| 6320245 |
Radiation-hardened semiconductor device |
Nov. 20, 2001 |
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