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Class Information
Number: 257/646
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With means to control surface effects > Insulating coating > Coating of semi-insulating material (e.g., amorphous silicon or silicon-rich silicon oxide)
Description: Subject matter wherein the insulating layer is composed of a semi-insulating material.

Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
5650638 Semiconductor device having a passivation layer Jul. 22, 1997
5589708 Radiation hard integrated circuits with implanted silicon in gate oxide layer, field oxide region, and interlevel dielectric layer Dec. 31, 1996
5578867 Passivation method and structure using hard ceramic materials or the like Nov. 26, 1996
5559367 Diamond-like carbon for use in VLSI and ULSI interconnect systems Sep. 24, 1996
5552625 Semiconductor device having a semi-insulating layer Sep. 3, 1996
5534731 Layered low dielectric constant technology Jul. 9, 1996
5523604 Amorphous silicon layer for top surface of semiconductor device Jun. 4, 1996
5521418 Semiconductor device and a method of manufacturing same May. 28, 1996
5481128 Structure for flash memory cell Jan. 2, 1996
5475257 Semiconductor device having an improved low resistive contact Dec. 12, 1995
5461254 Method and resulting device for field inversion free multiple layer metallurgy VLSI processing Oct. 24, 1995
5449938 MOS-controlled power semiconductor component Sep. 12, 1995
5428244 Semiconductor device having a silicon rich dielectric layer Jun. 27, 1995
5374833 Structure for suppression of field inversion caused by charge build-up in the dielectric Dec. 20, 1994
5374481 Polyemitter structure with improved interface control Dec. 20, 1994
5371039 Method for fabricating capacitor having polycrystalline silicon film Dec. 6, 1994
5326989 Semiconductor device having thin film transistor and method of manufacturing the same Jul. 5, 1994
5293062 FET nonvolatile memory with composite gate insulating layer Mar. 8, 1994
5264714 Thin-film electroluminescence device Nov. 23, 1993
5245213 Planarized semiconductor product Sep. 14, 1993
5192871 Voltage variable capacitor having amorphous dielectric film Mar. 9, 1993
5187637 Monolithic high-voltage capacitor Feb. 16, 1993
5039358 Amorphous, hydrogenated carbon electroactive passivation layer Aug. 13, 1991
5029324 Semiconductor device having a semiconductive protection layer Jul. 2, 1991
4980749 P-N junction semiconductor device and method of fabrication Dec. 25, 1990
4972250 Protective coating useful as passivation layer for semiconductor devices Nov. 20, 1990
4961103 Semiconductor device having polycrystalline silicon resistor Oct. 2, 1990
4951100 Hot electron collector for a LDD transistor Aug. 21, 1990
4905070 Semiconductor device exhibiting no degradation of low current gain Feb. 27, 1990
4901133 Multilayer semi-insulating film for hermetic wafer passivation and method for making same Feb. 13, 1990
4896200 Novel semiconductor-based radiation detector Jan. 23, 1990
4890150 Dielectric passivation Dec. 26, 1989
4876219 Method of forming a heteroepitaxial semiconductor thin film using amorphous buffer layers Oct. 24, 1989
H655 Radiation hardening of MISFET devices Jul. 4, 1989
4742384 Structure for passivating a PN junction May. 3, 1988
4618871 Schottky power diode Oct. 21, 1986
4479297 Method of fabricating three-dimensional semiconductor devices utilizing CeO.sub.2 and ion-implantation. Oct. 30, 1984
4473597 Method and structure for passivating a PN junction Sep. 25, 1984
4375125 Method of passivating pn-junction in a semiconductor device Mar. 1, 1983
4362766 Method for preparing a protective amorphous silicon passivating film on a semiconductor device Dec. 7, 1982
4320178 Structure of the insulator--semiconductor type Mar. 16, 1982
4315782 Method of making semiconductor device with passivated rectifying junctions having hydrogenated amorphous regions Feb. 16, 1982
4297149 Method of treating SiPOS passivated high voltage semiconductor device Oct. 27, 1981
4275409 Phosphorus-nitrogen-oxygen composition and method for making such composition and applications of the same Jun. 23, 1981
4254426 Method and structure for passivating semiconductor material Mar. 3, 1981
4224084 Method and structure for passivating a semiconductor device Sep. 23, 1980
4144100 Method of low dose phoshorus implantation for oxide passivated diodes in <10> P-type silicon Mar. 13, 1979
4133704 Method of forming diodes by amorphous implantations and concurrent annealing, monocrystalline reconversion and oxide passivation in <100> N-type silicon Jan. 9, 1979
4062707 Utilizing multiple polycrystalline silicon masks for diffusion and passivation Dec. 13, 1977
4017887 Method and means for passivation and isolation in semiconductor devices Apr. 12, 1977

1 2 3 4

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