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Class Information
Number: 257/646
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With means to control surface effects > Insulating coating > Coating of semi-insulating material (e.g., amorphous silicon or silicon-rich silicon oxide)
Description: Subject matter wherein the insulating layer is composed of a semi-insulating material.










Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
6959920 Protection against in-process charging in silicon-oxide-nitride-oxide-silicon (SONOS) memories Nov. 1, 2005
6900523 Termination structure for MOSgated power devices May. 31, 2005
6885042 Hetero-junction bipolar transistor and a manufacturing method of the same Apr. 26, 2005
6809339 Semiconductor device and method for manufacturing same Oct. 26, 2004
6780793 Production method of semiconductor device Aug. 24, 2004
6770917 High-voltage diode Aug. 3, 2004
6765254 Structure and method for preventing UV radiation damage and increasing data retention in memory cells Jul. 20, 2004
6753599 Semiconductor package and mounting structure on substrate thereof and stack structure thereof Jun. 22, 2004
6743681 Methods of Fabricating Gate and Storage Dielectric Stacks having Silicon-Rich-Nitride Jun. 1, 2004
6737319 Method of manufacturing semiconductor device and semiconductor device May. 18, 2004
6696705 Power semiconductor component having a mesa edge termination Feb. 24, 2004
6670695 Method of manufacturing anti-reflection layer Dec. 30, 2003
6664201 Method of manufacturing anti-reflection layer Dec. 16, 2003
6608351 Semiconductor device comprising a high-voltage circuit element Aug. 19, 2003
6548901 Cu/low-k BEOL with nonconcurrent hybrid dielectric interface Apr. 15, 2003
6518647 Plated aluminum leadframes for semiconductor devices, including two nickel layers, and method of fabrication Feb. 11, 2003
6476474 Dual-die package structure and method for fabricating the same Nov. 5, 2002
6433387 Lateral bipolar transistor Aug. 13, 2002
6384463 High voltage shield May. 7, 2002
6365959 Semiconductor device and method for fabricating the same Apr. 2, 2002
6355985 Integrated circuit device and synchronous-link dynamic random access memory device Mar. 12, 2002
6306777 Flash memory having a treatment layer disposed between an interpoly dielectric structure and method of forming Oct. 23, 2001
6242801 Semiconductor device Jun. 5, 2001
6184572 Interlevel dielectric stack containing plasma deposited fluorinated amorphous carbon films for semiconductor devices Feb. 6, 2001
6183857 Substrate for high frequency integrated circuits Feb. 6, 2001
6166428 Formation of a barrier layer for tungsten damascene interconnects by nitrogen implantation of amorphous silicon or polysilicon Dec. 26, 2000
6146928 Method for manufacturing thin film transistor, liquid crystal display and electronic device both produced by the method Nov. 14, 2000
6136700 Method for enhancing the performance of a contact Oct. 24, 2000
6133618 Semiconductor device having an anti-reflective layer and a method of manufacture thereof Oct. 17, 2000
6104092 Semiconductor device having amorphous carbon fluoride film of low dielectric constant as interlayer insulation material Aug. 15, 2000
6100572 Amorphous silicon combined with resurf region for termination for MOSgated device Aug. 8, 2000
6064112 Resin-molded semiconductor device having a lead on chip structure May. 16, 2000
6054753 Plastic-encapsulated semiconductor device equipped with LOC package structure Apr. 25, 2000
RE36441 Semiconductor device and a method of manufacturing same Dec. 14, 1999
5952717 Semiconductor device and method for producing the same Sep. 14, 1999
5945692 Semiconductor device and method of fabricating same Aug. 31, 1999
5942792 Compound semiconductor device having a multilayer silicon structure between an active region and insulator layer for reducing surface state density at interface Aug. 24, 1999
5912068 Epitaxial oxides on amorphous SiO.sub.2 on single crystal silicon Jun. 15, 1999
5903047 Low temperature-deposited passivation film over semiconductor device May. 11, 1999
5880518 Semiconductor device including a two-layer protective insulating layer Mar. 9, 1999
5866920 Semiconductor device and manufacturing method of the same Feb. 2, 1999
5831321 Semiconductor device in which an anti-reflective layer is formed by varying the composition thereof Nov. 3, 1998
5825068 Integrated circuits that include a barrier layer reducing hydrogen diffusion into a polysilicon resistor Oct. 20, 1998
5780874 Process for forming fluorinated resin or amorphous carbon layer and devices containing same Jul. 14, 1998
5763937 Device reliability of MOS devices using silicon rich plasma oxide films Jun. 9, 1998
5763905 Semiconductor device having a passivation layer Jun. 9, 1998
5751043 SRAM with SIPOS resistor May. 12, 1998
5712506 Semiconductor device with passivation layer of benzocyclobutene polymer and silicon powder Jan. 27, 1998
5698901 Semiconductor device with amorphous carbon layer for reducing wiring delay Dec. 16, 1997
5661334 Inter-metal dielectric structure which combines fluorine-doped glass and barrier layers Aug. 26, 1997

1 2 3 4










 
 
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