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Class Information
Number: 257/645
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With means to control surface effects > Insulating coating > Multiple layers > Insulating layer containing specified electrical charge (e.g., net negative electrical charge)
Description: Subject matter wherein the multiple insulating layers, or at least one of the insulating layers, has a specified electrical charge.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7378328 |
Method of fabricating memory device utilizing carbon nanotubes |
May. 27, 2008 |
| 7332796 |
Devices and methods of preventing plasma charging damage in semiconductor devices |
Feb. 19, 2008 |
| 7312182 |
Rare earth metal compounds for use in high critical temperature thin film super-conductors |
Dec. 25, 2007 |
| 7282420 |
Method of manufacturing a flash memory device |
Oct. 16, 2007 |
| 7262489 |
Three-dimensionally formed circuit sheet, component and method for manufacturing the same |
Aug. 28, 2007 |
| 7244635 |
Semiconductor device and method of manufacturing the same |
Jul. 17, 2007 |
| 7211878 |
Semiconductor nonvolatile memory, method of recording data in the semiconductor nonvolatile memory and method of reading data from the semiconductor nonvolatile memory |
May. 1, 2007 |
| 7196387 |
Memory cell with an asymmetrical area |
Mar. 27, 2007 |
| 7151027 |
Method and device for reducing interface area of a memory device |
Dec. 19, 2006 |
| 7151042 |
Method of improving flash memory performance |
Dec. 19, 2006 |
| 7091545 |
Memory device and fabrication method thereof |
Aug. 15, 2006 |
| 7087969 |
Complementary field effect transistor and its manufacturing method |
Aug. 8, 2006 |
| 7071538 |
One stack with steam oxide for charge retention |
Jul. 4, 2006 |
| 7030468 |
Low k and ultra low k SiCOH dielectric films and methods to form the same |
Apr. 18, 2006 |
| 6956262 |
Charge trapping pull up element |
Oct. 18, 2005 |
| 6921573 |
High-frequency current suppression body using magnetic loss material exhibiting outstanding complex permeability characteristics |
Jul. 26, 2005 |
| 6911378 |
Stabilization of fluorine-containing dielectric materials in a metal insulator wiring structure |
Jun. 28, 2005 |
| 6882031 |
Ammonia gas passivation on nitride encapsulated devices |
Apr. 19, 2005 |
| 6849926 |
Low dielectric constant composite material containing nano magnetic particles, and optical and semiconductor devices using the low dielectric constant composite material |
Feb. 1, 2005 |
| 6794733 |
Increasing the susceptability of an integrated circuit to ionizing radiation |
Sep. 21, 2004 |
| 6746945 |
Method of forming a via hole in a semiconductor device |
Jun. 8, 2004 |
| 6713390 |
Barrier layer deposition using HDP-CVD |
Mar. 30, 2004 |
| 6664612 |
Semiconductor component having double passivating layers formed of two passivating layers of different dielectric materials |
Dec. 16, 2003 |
| 6593615 |
Dielectric gap fill process that effectively reduces capacitance between narrow metal lines using HDP-CVD |
Jul. 15, 2003 |
| 6479862 |
Charge trapping device and method for implementing a transistor having a negative differential resistance mode |
Nov. 12, 2002 |
| 6462394 |
Device configured to avoid threshold voltage shift in a dielectric film |
Oct. 8, 2002 |
| 6320246 |
Semiconductor wafer assemblies |
Nov. 20, 2001 |
| 6165915 |
Forming halogen doped glass dielectric layer with enhanced stability |
Dec. 26, 2000 |
| 6084246 |
A.sub.4 MeSb.sub.3 O.sub.12 substrates and dielectric/buffer layers for growth of epitaxial HTSC/perovskite oxide films for use in HTSC/perovskite oxide devices and microwave device structures |
Jul. 4, 2000 |
| 6060767 |
Semiconductor device having fluorine bearing sidewall spacers and method of manufacture thereof |
May. 9, 2000 |
| 6020606 |
Structure of a memory cell |
Feb. 1, 2000 |
| 5965918 |
Semiconductor device including field effect transistor |
Oct. 12, 1999 |
| 5959329 |
Insulating oxide film formed by high-temperature wet oxidation |
Sep. 28, 1999 |
| 5907182 |
Semiconductor device having element with high breakdown voltage |
May. 25, 1999 |
| 5864088 |
Electronic device having the electromagnetic interference suppressing body |
Jan. 26, 1999 |
| 5767548 |
Semiconductor component with embedded fixed charges to provide increased high breakdown voltage |
Jun. 16, 1998 |
| 5757064 |
Multlayer interconnection structure for semiconductor device |
May. 26, 1998 |
| 5731628 |
Semiconductor device having element with high breakdown voltage |
Mar. 24, 1998 |
| 5629531 |
Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures |
May. 13, 1997 |
| 5625208 |
Method for using a charge injection transistor |
Apr. 29, 1997 |
| 5578867 |
Passivation method and structure using hard ceramic materials or the like |
Nov. 26, 1996 |
| 5523603 |
Semiconductor device with reduced time-dependent dielectric failures |
Jun. 4, 1996 |
| 5457335 |
Floating gate FET with hydrogen barrier shield |
Oct. 10, 1995 |
| 5406116 |
Dopant implant for conductive charge leakage layer for use with voltage contrast |
Apr. 11, 1995 |
| 5319229 |
Semiconductor nonvolatile memory with wide memory window and long data retention time |
Jun. 7, 1994 |
| 5057897 |
Charge neutralization using silicon-enriched oxide layer |
Oct. 15, 1991 |
| 4590663 |
High voltage CMOS technology with N-channel source/drain extensions |
May. 27, 1986 |
| 4542400 |
Semiconductor device with multi-layered structure |
Sep. 17, 1985 |
| 4474623 |
Method of passivating a semiconductor body |
Oct. 2, 1984 |
| 4228446 |
Reduced blooming device having enhanced quantum efficiency |
Oct. 14, 1980 |
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