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Class Information
Number: 257/645
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With means to control surface effects > Insulating coating > Multiple layers > Insulating layer containing specified electrical charge (e.g., net negative electrical charge)
Description: Subject matter wherein the multiple insulating layers, or at least one of the insulating layers, has a specified electrical charge.

Patents under this class:
1 2

Patent Number Title Of Patent Date Issued
8164131 Nonvolatile semiconductor memory device and method of manufacturing the same Apr. 24, 2012
7851892 Semiconductor memory device and method for fabricating the same Dec. 14, 2010
7709874 Semiconductor device having a split gate structure with a recessed top face electrode May. 4, 2010
7378328 Method of fabricating memory device utilizing carbon nanotubes May. 27, 2008
7332796 Devices and methods of preventing plasma charging damage in semiconductor devices Feb. 19, 2008
7312182 Rare earth metal compounds for use in high critical temperature thin film super-conductors Dec. 25, 2007
7282420 Method of manufacturing a flash memory device Oct. 16, 2007
7262489 Three-dimensionally formed circuit sheet, component and method for manufacturing the same Aug. 28, 2007
7244635 Semiconductor device and method of manufacturing the same Jul. 17, 2007
7211878 Semiconductor nonvolatile memory, method of recording data in the semiconductor nonvolatile memory and method of reading data from the semiconductor nonvolatile memory May. 1, 2007
7196387 Memory cell with an asymmetrical area Mar. 27, 2007
7151027 Method and device for reducing interface area of a memory device Dec. 19, 2006
7151042 Method of improving flash memory performance Dec. 19, 2006
7091545 Memory device and fabrication method thereof Aug. 15, 2006
7087969 Complementary field effect transistor and its manufacturing method Aug. 8, 2006
7071538 One stack with steam oxide for charge retention Jul. 4, 2006
7030468 Low k and ultra low k SiCOH dielectric films and methods to form the same Apr. 18, 2006
6956262 Charge trapping pull up element Oct. 18, 2005
6921573 High-frequency current suppression body using magnetic loss material exhibiting outstanding complex permeability characteristics Jul. 26, 2005
6911378 Stabilization of fluorine-containing dielectric materials in a metal insulator wiring structure Jun. 28, 2005
6882031 Ammonia gas passivation on nitride encapsulated devices Apr. 19, 2005
6849926 Low dielectric constant composite material containing nano magnetic particles, and optical and semiconductor devices using the low dielectric constant composite material Feb. 1, 2005
6794733 Increasing the susceptability of an integrated circuit to ionizing radiation Sep. 21, 2004
6746945 Method of forming a via hole in a semiconductor device Jun. 8, 2004
6713390 Barrier layer deposition using HDP-CVD Mar. 30, 2004
6664612 Semiconductor component having double passivating layers formed of two passivating layers of different dielectric materials Dec. 16, 2003
6593615 Dielectric gap fill process that effectively reduces capacitance between narrow metal lines using HDP-CVD Jul. 15, 2003
6479862 Charge trapping device and method for implementing a transistor having a negative differential resistance mode Nov. 12, 2002
6462394 Device configured to avoid threshold voltage shift in a dielectric film Oct. 8, 2002
6320246 Semiconductor wafer assemblies Nov. 20, 2001
6165915 Forming halogen doped glass dielectric layer with enhanced stability Dec. 26, 2000
6084246 A.sub.4 MeSb.sub.3 O.sub.12 substrates and dielectric/buffer layers for growth of epitaxial HTSC/perovskite oxide films for use in HTSC/perovskite oxide devices and microwave device structures Jul. 4, 2000
6060767 Semiconductor device having fluorine bearing sidewall spacers and method of manufacture thereof May. 9, 2000
6020606 Structure of a memory cell Feb. 1, 2000
5965918 Semiconductor device including field effect transistor Oct. 12, 1999
5959329 Insulating oxide film formed by high-temperature wet oxidation Sep. 28, 1999
5907182 Semiconductor device having element with high breakdown voltage May. 25, 1999
5864088 Electronic device having the electromagnetic interference suppressing body Jan. 26, 1999
5767548 Semiconductor component with embedded fixed charges to provide increased high breakdown voltage Jun. 16, 1998
5757064 Multlayer interconnection structure for semiconductor device May. 26, 1998
5731628 Semiconductor device having element with high breakdown voltage Mar. 24, 1998
5629531 Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures May. 13, 1997
5625208 Method for using a charge injection transistor Apr. 29, 1997
5578867 Passivation method and structure using hard ceramic materials or the like Nov. 26, 1996
5523603 Semiconductor device with reduced time-dependent dielectric failures Jun. 4, 1996
5457335 Floating gate FET with hydrogen barrier shield Oct. 10, 1995
5406116 Dopant implant for conductive charge leakage layer for use with voltage contrast Apr. 11, 1995
5319229 Semiconductor nonvolatile memory with wide memory window and long data retention time Jun. 7, 1994
5057897 Charge neutralization using silicon-enriched oxide layer Oct. 15, 1991
4590663 High voltage CMOS technology with N-channel source/drain extensions May. 27, 1986

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