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Class Information
Number: 257/643
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With means to control surface effects > Insulating coating > Multiple layers > At least one layer of organic material > Polyimide or polyamide
Description: Subject matter wherein the at least one organic insulating layer comprises polyamide (i.e., a polymeric compound) resulting from replacement of an atom of hydrogen in an organic amine by an organic univalent acid radical, or polyimide, i.e., a polymeric compound resulting from replacement of both atoms of hydrogen in an organic amine by organic univalent acid radicals or by an organic divalent acid radical.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 5959347 |
LOC semiconductor assembled with room temperature adhesive |
Sep. 28, 1999 |
| 5955779 |
Method of forming resin film of desired pattern on semiconductor substrate, semiconductor chip, semiconductor package, and resist image remover |
Sep. 21, 1999 |
| 5952708 |
Display device |
Sep. 14, 1999 |
| 5945203 |
Stratified composite dielectric and method of fabrication |
Aug. 31, 1999 |
| 5945739 |
Semiconductor device having a conductor through an inter-level layer and a spin-on-glass in the inter-level layer with substantially planar upper surfaces of the conductor, the inter-level lay |
Aug. 31, 1999 |
| 5939771 |
Semiconductor device having an organic resin layer and silicon oxide layer containing fluorine for preventing crosstalk between metal lines and a method of manufacturing the same |
Aug. 17, 1999 |
| 5929509 |
Wafer edge seal ring structure |
Jul. 27, 1999 |
| 5861677 |
Low RC interconnection |
Jan. 19, 1999 |
| 5798562 |
Semiconductor device having an isolation layer and two passivation layers with edges that are not aligned with each other |
Aug. 25, 1998 |
| 5763941 |
Connection component with releasable leads |
Jun. 9, 1998 |
| 5760480 |
Low RC interconnection |
Jun. 2, 1998 |
| 5753968 |
Low loss ridged microstrip line for monolithic microwave integrated circuit (MMIC) applications |
May. 19, 1998 |
| 5691573 |
Composite insulation with a dielectric constant of less than 3 in a narrow space separating conductive lines |
Nov. 25, 1997 |
| 5646439 |
Electronic chip component with passivation film and organic protective film |
Jul. 8, 1997 |
| 5627404 |
Semiconductor device provided on an organic resin substrate |
May. 6, 1997 |
| 5616960 |
Multilayered interconnection substrate having a resin wall formed on side surfaces of a contact hole |
Apr. 1, 1997 |
| 5604362 |
Filter architecture for a photosensitive chip |
Feb. 18, 1997 |
| 5567981 |
Bonding pad structure having an interposed rigid layer |
Oct. 22, 1996 |
| 5552638 |
Metallized vias in polyimide |
Sep. 3, 1996 |
| 5523615 |
Porous dielectric material with improved pore surface properties for electronics applications |
Jun. 4, 1996 |
| 5519246 |
Nonvolatile memory apparatus using an ultraviolet impermeable resin film |
May. 21, 1996 |
| 5473187 |
Hybrids semiconductor circuit |
Dec. 5, 1995 |
| 5449950 |
Photosensor with organic and inorganic insulation layers |
Sep. 12, 1995 |
| 5430329 |
Semiconductor device with bonding pad electrode |
Jul. 4, 1995 |
| 5391915 |
Integrated circuit having reduced soft errors and reduced penetration of alkali impurities into the substrate |
Feb. 21, 1995 |
| 5389814 |
Electrically blowable fuse structure for organic insulators |
Feb. 14, 1995 |
| 5336925 |
Positive working polyamic acid/imide photoresist compositions and their use as dielectrics |
Aug. 9, 1994 |
| 5336929 |
Semiconductor structure and method for fabricating the same |
Aug. 9, 1994 |
| 5302851 |
Circuit assembly with polyimide insulator |
Apr. 12, 1994 |
| 5146312 |
Insulated lead frame for semiconductor packaged devices |
Sep. 8, 1992 |
| 5114754 |
Passivation of metal in metal/polyimide structures |
May. 19, 1992 |
| 5073814 |
Multi-sublayer dielectric layers |
Dec. 17, 1991 |
| 5072262 |
Electric-electronic device including polyimide thin film |
Dec. 10, 1991 |
| 5055906 |
Semiconductor device having a composite insulating interlayer |
Oct. 8, 1991 |
| 5027176 |
Photo-electric converter with intervening wirings for capacitive shielding |
Jun. 25, 1991 |
| 4990993 |
Resin-molded semiconductor device using polymide and nitride films for the passivation film |
Feb. 5, 1991 |
| 4989063 |
Hybrid wafer scale microcircuit integration |
Jan. 29, 1991 |
| 4982079 |
Photo-sensor having plural transparent layers and a conductive layer to reduce electrostaslic charges |
Jan. 1, 1991 |
| 4916520 |
Semiconductor device with airbridge interconnection |
Apr. 10, 1990 |
| 4901133 |
Multilayer semi-insulating film for hermetic wafer passivation and method for making same |
Feb. 13, 1990 |
| 4853760 |
Semiconductor device having insulating layer including polyimide film |
Aug. 1, 1989 |
| 4841354 |
Electronic device with peripheral protective electrode |
Jun. 20, 1989 |
| 4733289 |
Resin-molded semiconductor device using polyimide and nitride films for the passivation film |
Mar. 22, 1988 |
| 4725561 |
Process for the production of mutually electrically insulated monocrystalline silicon islands using laser recrystallization |
Feb. 16, 1988 |
| 4723197 |
Bonding pad interconnection structure |
Feb. 2, 1988 |
| 4663832 |
Method for improving the planarity and passivation in a semiconductor isolation trench arrangement |
May. 12, 1987 |
| 4618878 |
Semiconductor device having a multilayer wiring structure using a polyimide resin |
Oct. 21, 1986 |
| 4549927 |
Method of selectively exposing the sidewalls of a trench and its use to the forming of a metal silicide substrate contact for dielectric filled deep trench isolated devices |
Oct. 29, 1985 |
| 4547793 |
Trench-defined semiconductor structure |
Oct. 15, 1985 |
| 4541168 |
Method for making metal contact studs between first level metal and regions of a semiconductor device compatible with polyimide-filled deep trench isolation schemes |
Sep. 17, 1985 |
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