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Class Information
Number: 257/642
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With means to control surface effects > Insulating coating > Multiple layers > At least one layer of organic material
Description: Subject matter wherein at least one insulating layer comprises an organic compound, i.e., one which has a molecule characterized by two carbon atoms bonded together, one atom of carbon being bonded to at least one atom of hydrogen or a halogen, or one atom or carbon bonded to at least one atom of nitrogen by a single or double bond, certain compounds such as HCN, CN-CN, HNCO, HNCS, cyanogen halides, cyanamide, fulminic acid and metal carbides, being exceptions to this rule.

Sub-classes under this class:

Class Number Class Name Patents
257/643 Polyimide or polyamide 221

Patents under this class:
1 2 3 4 5 6 7 8 9 10

Patent Number Title Of Patent Date Issued
6100954 Liquid crystal display with planarizing organic gate insulator and organic planarization layer and method for manufacturing Aug. 8, 2000
6084301 Composite bump structures Jul. 4, 2000
6072227 Low power method of depositing a low k dielectric with organo silane Jun. 6, 2000
6064094 Over-voltage protection system for integrated circuits using the bonding pads and passivation layer May. 16, 2000
6046500 Method of controlling the spread of an adhesive on a circuitized organic substrate Apr. 4, 2000
6038133 Circuit component built-in module and method for producing the same Mar. 14, 2000
6018184 Semiconductor structure useful in a self-aligned contact having multiple insulation layers of non-uniform thickness Jan. 25, 2000
6008540 Integrated circuit dielectric and method Dec. 28, 1999
6006428 Polytetrafluoroethylene thin film chip carrier Dec. 28, 1999
5990557 Bias plasma deposition for selective low dielectric insulation Nov. 23, 1999
5990542 Semiconductor device Nov. 23, 1999
5965934 Processing techniques for achieving production-worthy, low dielectric, low interconnect resistance and high performance ICS Oct. 12, 1999
5965935 Low loss ridged microstrip line for monolithic microwave integrated circuit (MMIC) applications Oct. 12, 1999
5963285 Liquid crystal display with improved electrode adhesion and method for manufacturing same Oct. 5, 1999
5959361 Dielectric pattern Sep. 28, 1999
5955779 Method of forming resin film of desired pattern on semiconductor substrate, semiconductor chip, semiconductor package, and resist image remover Sep. 21, 1999
5945203 Stratified composite dielectric and method of fabrication Aug. 31, 1999
5907182 Semiconductor device having element with high breakdown voltage May. 25, 1999
5900671 Electronic component including conductor connected to electrode and anodically bonded to insulating coating May. 4, 1999
5892284 Semiconductor integrated circuit Apr. 6, 1999
5889330 Semiconductor device whose flattening resin film component has a controlled carbon atom content Mar. 30, 1999
5886415 Anisotropic conductive sheet and printed circuit board Mar. 23, 1999
5866920 Semiconductor device and manufacturing method of the same Feb. 2, 1999
5864088 Electronic device having the electromagnetic interference suppressing body Jan. 26, 1999
5861677 Low RC interconnection Jan. 19, 1999
5859472 Curved lead configurations Jan. 12, 1999
5847443 Porous dielectric material with improved pore surface properties for electronics applications Dec. 8, 1998
5828132 Semiconductor device having perfluorinated and non-fluorinated parylene intermetal dielectric Oct. 27, 1998
5798562 Semiconductor device having an isolation layer and two passivation layers with edges that are not aligned with each other Aug. 25, 1998
5798563 Polytetrafluoroethylene thin film chip carrier Aug. 25, 1998
5780874 Process for forming fluorinated resin or amorphous carbon layer and devices containing same Jul. 14, 1998
5763941 Connection component with releasable leads Jun. 9, 1998
5760480 Low RC interconnection Jun. 2, 1998
5753968 Low loss ridged microstrip line for monolithic microwave integrated circuit (MMIC) applications May. 19, 1998
5751066 Structure with selective gap fill of submicron interconnects May. 12, 1998
5751018 Semiconductor nanocrystals covalently bound to solid inorganic surfaces using self-assembled monolayers May. 12, 1998
5731628 Semiconductor device having element with high breakdown voltage Mar. 24, 1998
5723909 Semiconductor device and associated fabrication method Mar. 3, 1998
5717232 Semiconductor device sealed with molded resin Feb. 10, 1998
5714798 Selective deposition process Feb. 3, 1998
5698901 Semiconductor device with amorphous carbon layer for reducing wiring delay Dec. 16, 1997
5691573 Composite insulation with a dielectric constant of less than 3 in a narrow space separating conductive lines Nov. 25, 1997
5661344 Porous dielectric material with a passivation layer for electronics applications Aug. 26, 1997
5646439 Electronic chip component with passivation film and organic protective film Jul. 8, 1997
5631496 Semiconductor component having a passivation layer and method for manufacturing same May. 20, 1997
5627404 Semiconductor device provided on an organic resin substrate May. 6, 1997
5604380 Semiconductor device having a multilayer interconnection structure Feb. 18, 1997
5600151 Semiconductor device comprising a semiconductor substrate, an element formed thereon, and a stress-buffering film made of a silicone ladder resin Feb. 4, 1997
5596208 Article comprising an organic thin film transistor Jan. 21, 1997
5585646 Bio-electronic devices Dec. 17, 1996

1 2 3 4 5 6 7 8 9 10

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