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Class Information
Number: 257/641
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With means to control surface effects > Insulating coating > Multiple layers > At least one layer of silicon nitride > Combined with glass layer
Description: Subject matter wherein in addition to the layer of silicon nitride, there is at least one layer of glass in the multiple insulating layers on the semiconductor body.










Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8552537 Semiconductor device and method for fabricating the same Oct. 8, 2013
8455872 Electronic devices having plastic substrates Jun. 4, 2013
8368064 Glass for scattering layer of organic LED device and organic LED device Feb. 5, 2013
8227877 Semiconductor bio-sensors and methods of manufacturing the same Jul. 24, 2012
7859100 Thermal barrier coating material, thermal barrier member, and member coated with thermal barrier and method for manufacturing the same Dec. 28, 2010
7781881 Thermal barrier coating material, thermal barrier member, and member coated with thermal barrier and method for manufacturing the same Aug. 24, 2010
7566950 Flexible pixel array substrate Jul. 28, 2009
7470990 Low moisture absorptive circuitized substrate with reduced thermal expansion, method of making same, electrical assembly utilizing same, and information handling system utilizing same Dec. 30, 2008
7446395 Device having dual etch stop liner and protective layer Nov. 4, 2008
7180129 Semiconductor device including insulating layer Feb. 20, 2007
7115956 Conductive film as the connector for thin film display device Oct. 3, 2006
7084508 Semiconductor device with multiple layer insulating film Aug. 1, 2006
7075187 Coating material over electrodes to support organic synthesis Jul. 11, 2006
7005724 Semiconductor device and a method of manufacture therefor Feb. 28, 2006
6989579 Adhering layers to metals with dielectric adhesive layers Jan. 24, 2006
6864562 Semiconductor device having active element connected to an electrode metal pad via a barrier metal layer and interlayer insulating film Mar. 8, 2005
6730619 Method of manufacturing insulating layer and semiconductor device including insulating layer May. 4, 2004
6713390 Barrier layer deposition using HDP-CVD Mar. 30, 2004
6650002 Semiconductor device having active element connected to an electrode metal pad via a barrier metal layer and interlayer insulating film Nov. 18, 2003
6633076 Methods and apparatus for producing stable low k FSG film for HDP-CVD Oct. 14, 2003
6614098 Semiconductor devices and fabrication thereof Sep. 2, 2003
6603192 Scratch resistance improvement by filling metal gaps Aug. 5, 2003
6600228 Keyhole at the top metal level prefilled with photoresist to prevent passivation damage even for a severe top metal rule Jul. 29, 2003
6548873 Semiconductor device and manufacturing method of the same Apr. 15, 2003
6537902 Method of forming a via hole in a semiconductor device Mar. 25, 2003
6501141 Self-aligned contact with improved isolation and method for forming Dec. 31, 2002
6483173 Solution to black diamond film delamination problem Nov. 19, 2002
6445072 Deliberate void in innerlayer dielectric gapfill to reduce dielectric constant Sep. 3, 2002
6441467 Semiconductor device having active element connected to an electrode metal pad via a barrier metal layer and interlayer insulating film Aug. 27, 2002
6396078 Semiconductor device with a tapered hole formed using multiple layers with different etching rates May. 28, 2002
6396122 Method for fabricating on-chip inductors and related structure May. 28, 2002
6376911 Planarized final passivation for semiconductor devices Apr. 23, 2002
6362508 Triple layer pre-metal dielectric structure for CMOS memory devices Mar. 26, 2002
6335561 Semiconductor device having a passivation film Jan. 1, 2002
6300672 Silicon oxynitride cap for fluorinated silicate glass film in intermetal dielectric semiconductor fabrication Oct. 9, 2001
6300667 Semiconductor structure with air gaps formed between metal leads Oct. 9, 2001
6246076 Layered dielectric on silicon carbide semiconductor structures Jun. 12, 2001
6246105 Semiconductor device and manufacturing process thereof Jun. 12, 2001
6165915 Forming halogen doped glass dielectric layer with enhanced stability Dec. 26, 2000
6147394 Method of photolithographically defining three regions with one mask step and self aligned isolation structure formed thereby Nov. 14, 2000
6104081 Semiconductor device with semiconductor elements formed in a layer of semiconductor material glued on a support wafer Aug. 15, 2000
6091121 Semiconductor device and method for manufacturing the same Jul. 18, 2000
6091082 Electrostatic discharge protection for integrated circuit sensor passivation Jul. 18, 2000
6084280 Transistor having a metal silicide self-aligned to the gate Jul. 4, 2000
6060766 Protection of hydrogen sensitive regions in semiconductor devices from the positive charge associated with plasma deposited barriers or layers May. 9, 2000
6057604 Integrated circuit contact structure having gate electrode protection for self-aligned contacts with zero enclosure May. 2, 2000
6034419 Semiconductor device with a tungsten contact Mar. 7, 2000
6020606 Structure of a memory cell Feb. 1, 2000
6018184 Semiconductor structure useful in a self-aligned contact having multiple insulation layers of non-uniform thickness Jan. 25, 2000
5952708 Display device Sep. 14, 1999

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