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Class Information
Number: 257/641
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With means to control surface effects > Insulating coating > Multiple layers > At least one layer of silicon nitride > Combined with glass layer
Description: Subject matter wherein in addition to the layer of silicon nitride, there is at least one layer of glass in the multiple insulating layers on the semiconductor body.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7446395 |
Device having dual etch stop liner and protective layer |
Nov. 4, 2008 |
| 7180129 |
Semiconductor device including insulating layer |
Feb. 20, 2007 |
| 7115956 |
Conductive film as the connector for thin film display device |
Oct. 3, 2006 |
| 7084508 |
Semiconductor device with multiple layer insulating film |
Aug. 1, 2006 |
| 7075187 |
Coating material over electrodes to support organic synthesis |
Jul. 11, 2006 |
| 7005724 |
Semiconductor device and a method of manufacture therefor |
Feb. 28, 2006 |
| 6989579 |
Adhering layers to metals with dielectric adhesive layers |
Jan. 24, 2006 |
| 6864562 |
Semiconductor device having active element connected to an electrode metal pad via a barrier metal layer and interlayer insulating film |
Mar. 8, 2005 |
| 6730619 |
Method of manufacturing insulating layer and semiconductor device including insulating layer |
May. 4, 2004 |
| 6713390 |
Barrier layer deposition using HDP-CVD |
Mar. 30, 2004 |
| 6650002 |
Semiconductor device having active element connected to an electrode metal pad via a barrier metal layer and interlayer insulating film |
Nov. 18, 2003 |
| 6633076 |
Methods and apparatus for producing stable low k FSG film for HDP-CVD |
Oct. 14, 2003 |
| 6614098 |
Semiconductor devices and fabrication thereof |
Sep. 2, 2003 |
| 6603192 |
Scratch resistance improvement by filling metal gaps |
Aug. 5, 2003 |
| 6600228 |
Keyhole at the top metal level prefilled with photoresist to prevent passivation damage even for a severe top metal rule |
Jul. 29, 2003 |
| 6548873 |
Semiconductor device and manufacturing method of the same |
Apr. 15, 2003 |
| 6537902 |
Method of forming a via hole in a semiconductor device |
Mar. 25, 2003 |
| 6501141 |
Self-aligned contact with improved isolation and method for forming |
Dec. 31, 2002 |
| 6483173 |
Solution to black diamond film delamination problem |
Nov. 19, 2002 |
| 6445072 |
Deliberate void in innerlayer dielectric gapfill to reduce dielectric constant |
Sep. 3, 2002 |
| 6441467 |
Semiconductor device having active element connected to an electrode metal pad via a barrier metal layer and interlayer insulating film |
Aug. 27, 2002 |
| 6396078 |
Semiconductor device with a tapered hole formed using multiple layers with different etching rates |
May. 28, 2002 |
| 6396122 |
Method for fabricating on-chip inductors and related structure |
May. 28, 2002 |
| 6376911 |
Planarized final passivation for semiconductor devices |
Apr. 23, 2002 |
| 6362508 |
Triple layer pre-metal dielectric structure for CMOS memory devices |
Mar. 26, 2002 |
| 6335561 |
Semiconductor device having a passivation film |
Jan. 1, 2002 |
| 6300667 |
Semiconductor structure with air gaps formed between metal leads |
Oct. 9, 2001 |
| 6300672 |
Silicon oxynitride cap for fluorinated silicate glass film in intermetal dielectric semiconductor fabrication |
Oct. 9, 2001 |
| 6246076 |
Layered dielectric on silicon carbide semiconductor structures |
Jun. 12, 2001 |
| 6246105 |
Semiconductor device and manufacturing process thereof |
Jun. 12, 2001 |
| 6165915 |
Forming halogen doped glass dielectric layer with enhanced stability |
Dec. 26, 2000 |
| 6147394 |
Method of photolithographically defining three regions with one mask step and self aligned isolation structure formed thereby |
Nov. 14, 2000 |
| 6104081 |
Semiconductor device with semiconductor elements formed in a layer of semiconductor material glued on a support wafer |
Aug. 15, 2000 |
| 6091121 |
Semiconductor device and method for manufacturing the same |
Jul. 18, 2000 |
| 6091082 |
Electrostatic discharge protection for integrated circuit sensor passivation |
Jul. 18, 2000 |
| 6084280 |
Transistor having a metal silicide self-aligned to the gate |
Jul. 4, 2000 |
| 6060766 |
Protection of hydrogen sensitive regions in semiconductor devices from the positive charge associated with plasma deposited barriers or layers |
May. 9, 2000 |
| 6057604 |
Integrated circuit contact structure having gate electrode protection for self-aligned contacts with zero enclosure |
May. 2, 2000 |
| 6034419 |
Semiconductor device with a tungsten contact |
Mar. 7, 2000 |
| 6020606 |
Structure of a memory cell |
Feb. 1, 2000 |
| 6018184 |
Semiconductor structure useful in a self-aligned contact having multiple insulation layers of non-uniform thickness |
Jan. 25, 2000 |
| 5952708 |
Display device |
Sep. 14, 1999 |
| 5936300 |
Semiconductor device with film covering |
Aug. 10, 1999 |
| 5925912 |
Semiconductor apparatus having a conductive sidewall structure |
Jul. 20, 1999 |
| 5907182 |
Semiconductor device having element with high breakdown voltage |
May. 25, 1999 |
| 5880519 |
Moisture barrier gap fill structure and method for making the same |
Mar. 9, 1999 |
| 5864172 |
Low dielectric constant insulation layer for integrated circuit structure and method of making same |
Jan. 26, 1999 |
| 5856705 |
Sealed semiconductor chip and process for fabricating sealed semiconductor chip |
Jan. 5, 1999 |
| 5847444 |
Semiconductor device with reduced aspect ratio contact hole |
Dec. 8, 1998 |
| 5844254 |
Planar thin film transistor structures |
Dec. 1, 1998 |
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