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Class Information
Number: 257/640
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With means to control surface effects > Insulating coating > Multiple layers > At least one layer of silicon nitride
Description: Subject matter wherein there is at least one layer of silicon nitride in the multiple insulating layers on the semiconductor body.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7446395 |
Device having dual etch stop liner and protective layer |
Nov. 4, 2008 |
| 7442628 |
Semiconductor laser manufacturing method |
Oct. 28, 2008 |
| 7397073 |
Barrier dielectric stack for seam protection |
Jul. 8, 2008 |
| 7382662 |
Twin insulator charge storage device operation and its fabrication method |
Jun. 3, 2008 |
| 7372113 |
Semiconductor device and method of manufacturing the same |
May. 13, 2008 |
| 7368804 |
Method and apparatus of stress relief in semiconductor structures |
May. 6, 2008 |
| 7358595 |
Method for manufacturing MOS transistor |
Apr. 15, 2008 |
| 7352053 |
Insulating layer having decreased dielectric constant and increased hardness |
Apr. 1, 2008 |
| 7315076 |
Display device and manufacturing method of the same |
Jan. 1, 2008 |
| 7304386 |
Semiconductor device having a multilayer wiring structure |
Dec. 4, 2007 |
| 7271463 |
Trench insulation structures including an oxide liner that is thinner along the walls of the trench than along the base |
Sep. 18, 2007 |
| 7253501 |
High performance metallization cap layer |
Aug. 7, 2007 |
| 7242096 |
Semiconductor device and method for manufacturing the same |
Jul. 10, 2007 |
| 7202568 |
Semiconductor passivation deposition process for interfacial adhesion |
Apr. 10, 2007 |
| 7192851 |
Semiconductor laser manufacturing method |
Mar. 20, 2007 |
| 7190033 |
CMOS device and method of manufacture |
Mar. 13, 2007 |
| 7179749 |
Method for fabricating semiconductor device capable of decreasing critical dimension in peripheral region |
Feb. 20, 2007 |
| 7173296 |
Reduced hydrogen sidewall spacer oxide |
Feb. 6, 2007 |
| 7141848 |
Memory device and dissimilar capacitors formed on same substrate |
Nov. 28, 2006 |
| 7122878 |
Method to fabricate high reliable metal capacitor within copper back-end process |
Oct. 17, 2006 |
| 7118987 |
Method of achieving improved STI gap fill with reduced stress |
Oct. 10, 2006 |
| 7115954 |
Semiconductor device including stress inducing films formed over n-channel and p-channel field effect transistors and a method of manufacturing the same |
Oct. 3, 2006 |
| 7109101 |
Capping layer for reducing amorphous carbon contamination of photoresist in semiconductor device manufacture; and process for making same |
Sep. 19, 2006 |
| 7095083 |
Methods for making semiconductor structures having high-speed areas and high-density areas |
Aug. 22, 2006 |
| 7078815 |
Semiconductor integrated circuit device |
Jul. 18, 2006 |
| 7071111 |
Sealed nitride layer for integrated circuits |
Jul. 4, 2006 |
| 7071538 |
One stack with steam oxide for charge retention |
Jul. 4, 2006 |
| 7057263 |
Semiconductor wafer assemblies comprising photoresist over silicon nitride materials |
Jun. 6, 2006 |
| 7057286 |
Semiconductor device and method of manufacturing the same |
Jun. 6, 2006 |
| 7038303 |
Semiconductor device and method for manufacturing the same |
May. 2, 2006 |
| 7019385 |
Semiconductor device and method of fabricating same |
Mar. 28, 2006 |
| 7009281 |
Small volume process chamber with hot inner surfaces |
Mar. 7, 2006 |
| 7005724 |
Semiconductor device and a method of manufacture therefor |
Feb. 28, 2006 |
| 6995472 |
Insulating tube |
Feb. 7, 2006 |
| 6992370 |
Memory cell structure having nitride layer with reduced charge loss and method for fabricating same |
Jan. 31, 2006 |
| 6960809 |
Polysilicon thin film transistor and method of forming the same |
Nov. 1, 2005 |
| 6960794 |
Formation of thin channels for TFT devices to ensure low variability of threshold voltages |
Nov. 1, 2005 |
| 6960537 |
Incorporation of nitrogen into high k dielectric film |
Nov. 1, 2005 |
| 6943432 |
Semiconductor constructions |
Sep. 13, 2005 |
| 6940151 |
Silicon-rich low thermal budget silicon nitride for integrated circuits |
Sep. 6, 2005 |
| 6914309 |
Semiconductor device with double sidewall spacer and layered contact |
Jul. 5, 2005 |
| 6911707 |
Ultrathin high-K gate dielectric with favorable interface properties for improved semiconductor device performance |
Jun. 28, 2005 |
| 6903422 |
Semiconductor integrated circuits, fabrication method for the same and semiconductor integrated circuit systems |
Jun. 7, 2005 |
| 6894369 |
Semiconductor device having a high-dielectric gate insulation film and fabrication process thereof |
May. 17, 2005 |
| 6891271 |
Non-volatile memory device |
May. 10, 2005 |
| 6888225 |
Process of final passivation of an integrated circuit device |
May. 3, 2005 |
| 6887774 |
Conductor layer nitridation |
May. 3, 2005 |
| 6887776 |
Methods to form metal lines using selective electrochemical deposition |
May. 3, 2005 |
| 6882031 |
Ammonia gas passivation on nitride encapsulated devices |
Apr. 19, 2005 |
| 6870225 |
Transistor structure with thick recessed source/drain structures and fabrication process of same |
Mar. 22, 2005 |
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