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Class Information
Number: 257/639
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With means to control surface effects > Insulating coating > Multiple layers > At least one layer of silicon oxynitride
Description: Subject matter wherein at least one of the multiple insulating layers is made of a mixture of the oxides and nitrides of silicon.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7456474 |
Semiconductor device having insulating film |
Nov. 25, 2008 |
| 7432216 |
Semiconductor device and manufacturing method thereof |
Oct. 7, 2008 |
| 7420264 |
High reflector tunable stress coating, such as for a MEMS mirror |
Sep. 2, 2008 |
| 7372114 |
Semiconductor device, and method of fabricating the same |
May. 13, 2008 |
| 7358595 |
Method for manufacturing MOS transistor |
Apr. 15, 2008 |
| 7329956 |
Dual damascene cleaning method |
Feb. 12, 2008 |
| 7301219 |
Electrically erasable programmable read only memory (EEPROM) cell and method for making the same |
Nov. 27, 2007 |
| 7262432 |
Semiconductor device and fabrication method thereof |
Aug. 28, 2007 |
| 7253501 |
High performance metallization cap layer |
Aug. 7, 2007 |
| 7217989 |
Composition for selectively polishing silicon nitride layer and polishing method employing it |
May. 15, 2007 |
| 7202551 |
Display device having underlying insulating film and insulating films |
Apr. 10, 2007 |
| 7202568 |
Semiconductor passivation deposition process for interfacial adhesion |
Apr. 10, 2007 |
| 7190033 |
CMOS device and method of manufacture |
Mar. 13, 2007 |
| 7187038 |
Semiconductor device with MOS transistors with an etch-stop layer having an improved residual stress level and method for fabricating such a semiconductor device |
Mar. 6, 2007 |
| 7166899 |
Semiconductor device, and method of fabricating the same |
Jan. 23, 2007 |
| 7118987 |
Method of achieving improved STI gap fill with reduced stress |
Oct. 10, 2006 |
| 7119418 |
Supercritical fluid-assisted deposition of materials on semiconductor substrates |
Oct. 10, 2006 |
| 7115974 |
Silicon oxycarbide and silicon carbonitride based materials for MOS devices |
Oct. 3, 2006 |
| 7095083 |
Methods for making semiconductor structures having high-speed areas and high-density areas |
Aug. 22, 2006 |
| 7064388 |
Semiconductor device and method for manufacturing the same |
Jun. 20, 2006 |
| 7061075 |
Shallow trench isolation using antireflection layer |
Jun. 13, 2006 |
| 7057286 |
Semiconductor device and method of manufacturing the same |
Jun. 6, 2006 |
| 7057263 |
Semiconductor wafer assemblies comprising photoresist over silicon nitride materials |
Jun. 6, 2006 |
| 7057262 |
High reflector tunable stress coating, such as for a MEMS mirror |
Jun. 6, 2006 |
| 7038303 |
Semiconductor device and method for manufacturing the same |
May. 2, 2006 |
| 7015082 |
High mobility CMOS circuits |
Mar. 21, 2006 |
| 7009281 |
Small volume process chamber with hot inner surfaces |
Mar. 7, 2006 |
| 7005724 |
Semiconductor device and a method of manufacture therefor |
Feb. 28, 2006 |
| 6995472 |
Insulating tube |
Feb. 7, 2006 |
| 6982468 |
Semiconductor device and method for manufacturing thereof |
Jan. 3, 2006 |
| 6960537 |
Incorporation of nitrogen into high k dielectric film |
Nov. 1, 2005 |
| 6949833 |
Combined atomic layer deposition and damascene processing for definition of narrow trenches |
Sep. 27, 2005 |
| 6943432 |
Semiconductor constructions |
Sep. 13, 2005 |
| 6924197 |
Method of fabricating an integrated circuit with a dielectric layer exposed to a hydrogen-bearing nitrogen source |
Aug. 2, 2005 |
| 6921937 |
Integrated circuit with a dielectric layer exposed to a hydrogen-bearing nitrogen source |
Jul. 26, 2005 |
| 6911707 |
Ultrathin high-K gate dielectric with favorable interface properties for improved semiconductor device performance |
Jun. 28, 2005 |
| 6888225 |
Process of final passivation of an integrated circuit device |
May. 3, 2005 |
| 6887774 |
Conductor layer nitridation |
May. 3, 2005 |
| 6876065 |
Semiconductor device and a fabrication method thereof |
Apr. 5, 2005 |
| 6867466 |
Memory device and method for forming a passivation layer thereon |
Mar. 15, 2005 |
| 6858898 |
Semiconductor device and method for manufacturing the same |
Feb. 22, 2005 |
| 6853002 |
Semiconductor device and fabrication method thereof |
Feb. 8, 2005 |
| 6815805 |
Method of fabricating an integrated circuit with a dielectric layer exposed to a hydrogen-bearing nitrogen source |
Nov. 9, 2004 |
| 6798065 |
Method and apparatus for high-resolution in-situ plasma etching of inorganic and metals films |
Sep. 28, 2004 |
| 6798026 |
Conductor layer nitridation |
Sep. 28, 2004 |
| 6784100 |
Capacitor with oxidation barrier layer and method for manufacturing the same |
Aug. 31, 2004 |
| 6784485 |
Diffusion barrier layer and semiconductor device containing same |
Aug. 31, 2004 |
| 6774462 |
Semiconductor device comprising dual silicon nitride layers with varying nitrogen ratio |
Aug. 10, 2004 |
| 6756635 |
Semiconductor substrate including multiple nitrided gate insulating films |
Jun. 29, 2004 |
| 6744113 |
Semiconductor device with element isolation using impurity-doped insulator and oxynitride film |
Jun. 1, 2004 |
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