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Class Information
Number: 257/636
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With means to control surface effects > Insulating coating > Multiple layers > At least one layer of semi-insulating material
Description: Subject matter wherein at least one of the multiple insulating layers is made of a semi-insulating material (i.e., has a resistivity between that of a semiconductor and that of an insulator).

Patents under this class:
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Patent Number Title Of Patent Date Issued
8604347 Board reinforcing structure, board assembly, and electronic device Dec. 10, 2013
8552537 Semiconductor device and method for fabricating the same Oct. 8, 2013
8415772 Method to prevent surface decomposition of III-V compound semiconductors Apr. 9, 2013
8394668 Oxide thin film, methods of manufacturing oxide thin film and electronic devices including oxide thin film Mar. 12, 2013
8377832 Method for manufacturing semiconductor device Feb. 19, 2013
8115318 Semiconductor device having silicon-diffused metal wiring layer and its manufacturing method Feb. 14, 2012
8115317 Semiconductor device including electrode structure with first and second openings and manufacturing method thereof Feb. 14, 2012
7898065 Structure and method for device-specific fill for improved anneal uniformity Mar. 1, 2011
7893522 Structural body and manufacturing method thereof Feb. 22, 2011
7888741 Structures with improved interfacial strength of SiCOH dielectrics and method for preparing the same Feb. 15, 2011
7687917 Single damascene structure semiconductor device having silicon-diffused metal wiring layer Mar. 30, 2010
7679148 Semiconductor device, production method and production device thereof Mar. 16, 2010
7652354 Semiconductor devices and methods of manufacturing semiconductor devices Jan. 26, 2010
7632702 Methods of forming a resistance variable element Dec. 15, 2009
7420264 High reflector tunable stress coating, such as for a MEMS mirror Sep. 2, 2008
7400005 Semiconductor memory device having ferroelectric capacitors with hydrogen barriers Jul. 15, 2008
7235469 Semiconductor device and method for manufacturing the same Jun. 26, 2007
7187058 Semiconductor component having a pn junction and a passivation layer applied on a surface Mar. 6, 2007
7180129 Semiconductor device including insulating layer Feb. 20, 2007
7071538 One stack with steam oxide for charge retention Jul. 4, 2006
7030462 Heterojunction bipolar transistor having specified lattice constants Apr. 18, 2006
7030468 Low k and ultra low k SiCOH dielectric films and methods to form the same Apr. 18, 2006
7009281 Small volume process chamber with hot inner surfaces Mar. 7, 2006
6946405 Polyparaxylylene film, production method therefor and semiconductor device Sep. 20, 2005
6940151 Silicon-rich low thermal budget silicon nitride for integrated circuits Sep. 6, 2005
6853054 High frequency semiconductor device Feb. 8, 2005
6849923 Semiconductor device and manufacturing method of the same Feb. 1, 2005
6753568 Memory device Jun. 22, 2004
6743681 Methods of Fabricating Gate and Storage Dielectric Stacks having Silicon-Rich-Nitride Jun. 1, 2004
6713846 Multilayer high .kappa. dielectric films Mar. 30, 2004
6624053 Damascene-type interconnection structure and its production process Sep. 23, 2003
6620534 Film having enhanced reflow characteristics at low thermal budget Sep. 16, 2003
6509627 Flowable germanium doped silicate glass for use as a spacer oxide Jan. 21, 2003
6504234 Semiconductor device with interlayer film comprising a diffusion prevention layer to keep metal impurities from invading the underlying semiconductor substrate Jan. 7, 2003
6483173 Solution to black diamond film delamination problem Nov. 19, 2002
6462402 Microelectronic substrate comprised of etch stop layer, stiffening layer, and endpointing layer Oct. 8, 2002
6348725 Plasma processes for depositing low dielectric constant films Feb. 19, 2002
6342445 Method for fabricating an SrRuO3 film Jan. 29, 2002
6329703 Contact between a monocrystalline silicon region and a polycrystalline silicon structure and method for producing such a contact Dec. 11, 2001
6252295 Adhesion of silicon carbide films Jun. 26, 2001
6235652 High rate silicon dioxide deposition at low pressures May. 22, 2001
6184572 Interlevel dielectric stack containing plasma deposited fluorinated amorphous carbon films for semiconductor devices Feb. 6, 2001
6175146 Semiconductor processing methods of forming integrated circuitry memory devices, methods of forming capacitor containers, methods of making electrical connection to circuit nodes and related i Jan. 16, 2001
6166427 Integration of low-K SiOF as inter-layer dielectric for AL-gapfill application Dec. 26, 2000
6166428 Formation of a barrier layer for tungsten damascene interconnects by nitrogen implantation of amorphous silicon or polysilicon Dec. 26, 2000
6150719 Amorphous hydrogenated carbon hermetic structure and fabrication method Nov. 21, 2000
6121681 Semiconductor device Sep. 19, 2000
6104081 Semiconductor device with semiconductor elements formed in a layer of semiconductor material glued on a support wafer Aug. 15, 2000
6100578 Silicon-based functional matrix substrate and optical integrated oxide device Aug. 8, 2000
6093956 Semiconductor wafer assemblies comprising silicon nitride, methods of forming silicon nitride, and methods of reducing stress on semiconductive wafers Jul. 25, 2000

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