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Class Information
Number: 257/636
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With means to control surface effects > Insulating coating > Multiple layers > At least one layer of semi-insulating material
Description: Subject matter wherein at least one of the multiple insulating layers is made of a semi-insulating material (i.e., has a resistivity between that of a semiconductor and that of an insulator).
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7420264 |
High reflector tunable stress coating, such as for a MEMS mirror |
Sep. 2, 2008 |
| 7400005 |
Semiconductor memory device having ferroelectric capacitors with hydrogen barriers |
Jul. 15, 2008 |
| 7235469 |
Semiconductor device and method for manufacturing the same |
Jun. 26, 2007 |
| 7187058 |
Semiconductor component having a pn junction and a passivation layer applied on a surface |
Mar. 6, 2007 |
| 7180129 |
Semiconductor device including insulating layer |
Feb. 20, 2007 |
| 7071538 |
One stack with steam oxide for charge retention |
Jul. 4, 2006 |
| 7030462 |
Heterojunction bipolar transistor having specified lattice constants |
Apr. 18, 2006 |
| 7030468 |
Low k and ultra low k SiCOH dielectric films and methods to form the same |
Apr. 18, 2006 |
| 7009281 |
Small volume process chamber with hot inner surfaces |
Mar. 7, 2006 |
| 6946405 |
Polyparaxylylene film, production method therefor and semiconductor device |
Sep. 20, 2005 |
| 6940151 |
Silicon-rich low thermal budget silicon nitride for integrated circuits |
Sep. 6, 2005 |
| 6853054 |
High frequency semiconductor device |
Feb. 8, 2005 |
| 6849923 |
Semiconductor device and manufacturing method of the same |
Feb. 1, 2005 |
| 6753568 |
Memory device |
Jun. 22, 2004 |
| 6743681 |
Methods of Fabricating Gate and Storage Dielectric Stacks having Silicon-Rich-Nitride |
Jun. 1, 2004 |
| 6713846 |
Multilayer high .kappa. dielectric films |
Mar. 30, 2004 |
| 6624053 |
Damascene-type interconnection structure and its production process |
Sep. 23, 2003 |
| 6620534 |
Film having enhanced reflow characteristics at low thermal budget |
Sep. 16, 2003 |
| 6509627 |
Flowable germanium doped silicate glass for use as a spacer oxide |
Jan. 21, 2003 |
| 6504234 |
Semiconductor device with interlayer film comprising a diffusion prevention layer to keep metal impurities from invading the underlying semiconductor substrate |
Jan. 7, 2003 |
| 6483173 |
Solution to black diamond film delamination problem |
Nov. 19, 2002 |
| 6462402 |
Microelectronic substrate comprised of etch stop layer, stiffening layer, and endpointing layer |
Oct. 8, 2002 |
| 6348725 |
Plasma processes for depositing low dielectric constant films |
Feb. 19, 2002 |
| 6342445 |
Method for fabricating an SrRuO3 film |
Jan. 29, 2002 |
| 6329703 |
Contact between a monocrystalline silicon region and a polycrystalline silicon structure and method for producing such a contact |
Dec. 11, 2001 |
| 6252295 |
Adhesion of silicon carbide films |
Jun. 26, 2001 |
| 6235652 |
High rate silicon dioxide deposition at low pressures |
May. 22, 2001 |
| 6184572 |
Interlevel dielectric stack containing plasma deposited fluorinated amorphous carbon films for semiconductor devices |
Feb. 6, 2001 |
| 6175146 |
Semiconductor processing methods of forming integrated circuitry memory devices, methods of forming capacitor containers, methods of making electrical connection to circuit nodes and related i |
Jan. 16, 2001 |
| 6166428 |
Formation of a barrier layer for tungsten damascene interconnects by nitrogen implantation of amorphous silicon or polysilicon |
Dec. 26, 2000 |
| 6166427 |
Integration of low-K SiOF as inter-layer dielectric for AL-gapfill application |
Dec. 26, 2000 |
| 6150719 |
Amorphous hydrogenated carbon hermetic structure and fabrication method |
Nov. 21, 2000 |
| 6121681 |
Semiconductor device |
Sep. 19, 2000 |
| 6104081 |
Semiconductor device with semiconductor elements formed in a layer of semiconductor material glued on a support wafer |
Aug. 15, 2000 |
| 6100578 |
Silicon-based functional matrix substrate and optical integrated oxide device |
Aug. 8, 2000 |
| 6093956 |
Semiconductor wafer assemblies comprising silicon nitride, methods of forming silicon nitride, and methods of reducing stress on semiconductive wafers |
Jul. 25, 2000 |
| 6072227 |
Low power method of depositing a low k dielectric with organo silane |
Jun. 6, 2000 |
| 6054735 |
Very thin PECVD SiO.sub.2 in 0.5 micron and 0.35 micron technologies |
Apr. 25, 2000 |
| 6018184 |
Semiconductor structure useful in a self-aligned contact having multiple insulation layers of non-uniform thickness |
Jan. 25, 2000 |
| 5942792 |
Compound semiconductor device having a multilayer silicon structure between an active region and insulator layer for reducing surface state density at interface |
Aug. 24, 1999 |
| 5912068 |
Epitaxial oxides on amorphous SiO.sub.2 on single crystal silicon |
Jun. 15, 1999 |
| 5841186 |
Composite dielectric films |
Nov. 24, 1998 |
| 5763905 |
Semiconductor device having a passivation layer |
Jun. 9, 1998 |
| 5753934 |
Multilayer thin film, substrate for electronic device, electronic device, and preparation of multilayer oxide thin film |
May. 19, 1998 |
| 5682046 |
Heterojunction bipolar semiconductor device and its manufacturing method |
Oct. 28, 1997 |
| 5677562 |
Planar P-N junction semiconductor structure with multilayer passivation |
Oct. 14, 1997 |
| 5656852 |
High-dielectric-constant material electrodes comprising sidewall spacers |
Aug. 12, 1997 |
| 5650638 |
Semiconductor device having a passivation layer |
Jul. 22, 1997 |
| 5637908 |
Structure and technique for tailoring effective resistivity of a SIPOS layer by patterning and control of dopant introduction |
Jun. 10, 1997 |
| 5552625 |
Semiconductor device having a semi-insulating layer |
Sep. 3, 1996 |
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