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Class Information
Number: 257/634
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With means to control surface effects > Insulating coating > Insulating coating of glass composition containing component to adjust melting or softening temperature (e.g., low melting point glass)
Description: Subject matter wherein the insulating coating comprises a glass composition containing a component to adjust the melting or softening temperature.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7429789 |
Fluoropolymer dielectric composition for use in circuitized substrates and circuitized substrate including same |
Sep. 30, 2008 |
| 7405466 |
Method of fabricating microelectromechanical system structures |
Jul. 29, 2008 |
| 7358587 |
Semiconductor structures |
Apr. 15, 2008 |
| 7294909 |
Electronic package repair process |
Nov. 13, 2007 |
| RE39690 |
Enhanced planarization technique for an integrated circuit |
Jun. 12, 2007 |
| 7075187 |
Coating material over electrodes to support organic synthesis |
Jul. 11, 2006 |
| 7030468 |
Low k and ultra low k SiCOH dielectric films and methods to form the same |
Apr. 18, 2006 |
| 7026256 |
Method for forming flowable dielectric layer in semiconductor device |
Apr. 11, 2006 |
| 6995691 |
Bonded structure using reacted borosilicate mixture |
Feb. 7, 2006 |
| 6924868 |
Liquid crystal display device, method for fabricating the same, and portable telephone using the same |
Aug. 2, 2005 |
| 6864561 |
Method and apparatus for reducing fixed charge in semiconductor device layers |
Mar. 8, 2005 |
| 6844612 |
Low dielectric constant fluorine-doped silica glass film for use in integrated circuit chips and method of forming the same |
Jan. 18, 2005 |
| 6791163 |
Chip electronic component |
Sep. 14, 2004 |
| 6747338 |
Composite dielectric with improved etch selectivity for high voltage MEMS structures |
Jun. 8, 2004 |
| 6737319 |
Method of manufacturing semiconductor device and semiconductor device |
May. 18, 2004 |
| 6670022 |
Nanoporous dielectric films with graded density and process for making such films |
Dec. 30, 2003 |
| 6667540 |
Method and apparatus for reducing fixed charge in semiconductor device layers |
Dec. 23, 2003 |
| 6664567 |
Photoelectric conversion device, glass composition for coating silicon, and insulating coating in contact with silicon |
Dec. 16, 2003 |
| 6653718 |
Dielectric films for narrow gap-fill applications |
Nov. 25, 2003 |
| 6620534 |
Film having enhanced reflow characteristics at low thermal budget |
Sep. 16, 2003 |
| 6597066 |
Hermetic chip and method of manufacture |
Jul. 22, 2003 |
| 6509627 |
Flowable germanium doped silicate glass for use as a spacer oxide |
Jan. 21, 2003 |
| 6500740 |
Process for fabricating semiconductor devices in which the distribution of dopants is controlled |
Dec. 31, 2002 |
| 6483173 |
Solution to black diamond film delamination problem |
Nov. 19, 2002 |
| 6462402 |
Microelectronic substrate comprised of etch stop layer, stiffening layer, and endpointing layer |
Oct. 8, 2002 |
| 6455395 |
Method of fabricating silicon structures including fixtures for supporting wafers |
Sep. 24, 2002 |
| 6441466 |
Method and apparatus for reducing fixed charge in semiconductor device layers |
Aug. 27, 2002 |
| 6433387 |
Lateral bipolar transistor |
Aug. 13, 2002 |
| 6388309 |
Apparatus and method for manufacturing semiconductors using low dielectric constant materials |
May. 14, 2002 |
| 6379785 |
Glass-coated substrates for high frequency applications |
Apr. 30, 2002 |
| 6320246 |
Semiconductor wafer assemblies |
Nov. 20, 2001 |
| 6288438 |
Semiconductor device including insulation film and fabrication method thereof |
Sep. 11, 2001 |
| 6236105 |
Semiconductor device with improved planarity achieved through interlayer films with varying ozone concentrations |
May. 22, 2001 |
| 6232647 |
Air gap with borderless contact |
May. 15, 2001 |
| 6215161 |
Insulator structure for polysilicon resistors |
Apr. 10, 2001 |
| 6165915 |
Forming halogen doped glass dielectric layer with enhanced stability |
Dec. 26, 2000 |
| 6097079 |
Boron implanted dielectric structure |
Aug. 1, 2000 |
| 6083821 |
Integrated circuit having a void between adjacent conductive lines |
Jul. 4, 2000 |
| 6051876 |
Semiconductor device with a graded passivation layer |
Apr. 18, 2000 |
| 6051875 |
Semiconductor chip |
Apr. 18, 2000 |
| 6025260 |
Method for fabricating air gap with borderless contact |
Feb. 15, 2000 |
| 5986330 |
Enhanced planarization technique for an integrated circuit |
Nov. 16, 1999 |
| 5936301 |
Crack resistant passivation layer |
Aug. 10, 1999 |
| 5904576 |
Method of forming wiring structure |
May. 18, 1999 |
| 5892269 |
Semiconductor device including an intrusion film layer |
Apr. 6, 1999 |
| 5864172 |
Low dielectric constant insulation layer for integrated circuit structure and method of making same |
Jan. 26, 1999 |
| 5847439 |
Integrated circuit having a void between adjacent conductive lines |
Dec. 8, 1998 |
| 5818094 |
Package for housing a semiconductor element |
Oct. 6, 1998 |
| 5786625 |
Moisture resistant semiconductor device |
Jul. 28, 1998 |
| 5739580 |
Oxide formed in semiconductor substrate by implantation of substrate with a noble gas prior to oxidation |
Apr. 14, 1998 |
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