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Class Information
Number: 257/631
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With means to control surface effects > In compound semiconductor material (e.g., gaas)
Description: Subject matter wherein the means to control surface effects are provided in a compound semiconductor material (e.g., GaAs).
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7442628 |
Semiconductor laser manufacturing method |
Oct. 28, 2008 |
| 7315045 |
Sapphire/gallium nitride laminate having reduced bending deformation |
Jan. 1, 2008 |
| 7291874 |
Laser dicing apparatus for a gallium arsenide wafer and method thereof |
Nov. 6, 2007 |
| 7192851 |
Semiconductor laser manufacturing method |
Mar. 20, 2007 |
| 7187058 |
Semiconductor component having a pn junction and a passivation layer applied on a surface |
Mar. 6, 2007 |
| 7109530 |
Nitride-based semiconductor element |
Sep. 19, 2006 |
| 7053480 |
Integrated circuit with offset pins |
May. 30, 2006 |
| 7030462 |
Heterojunction bipolar transistor having specified lattice constants |
Apr. 18, 2006 |
| 6963090 |
Enhancement mode metal-oxide-semiconductor field effect transistor |
Nov. 8, 2005 |
| 6906350 |
Delta doped silicon carbide metal-semiconductor field effect transistors having a gate disposed in a double recess structure |
Jun. 14, 2005 |
| 6841409 |
Group III-V compound semiconductor and group III-V compound semiconductor device using the same |
Jan. 11, 2005 |
| 6797991 |
Nitride semiconductor device |
Sep. 28, 2004 |
| 6759139 |
Nitride-based semiconductor element and method of forming nitride-based semiconductor |
Jul. 6, 2004 |
| 6756611 |
Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device |
Jun. 29, 2004 |
| 6727559 |
Compound semiconductor device |
Apr. 27, 2004 |
| 6713845 |
Nitride-based semiconductor element |
Mar. 30, 2004 |
| 6653660 |
Vertical cavity-type semiconductor light-emitting device and optical module using vertical cavity-type semiconductor light-emitting device |
Nov. 25, 2003 |
| 6653663 |
Nitride semiconductor device |
Nov. 25, 2003 |
| 6573528 |
Detector diode with internal calibration structure |
Jun. 3, 2003 |
| 6504185 |
Compound semiconductor device and method for controlling characteristics of the same |
Jan. 7, 2003 |
| 6469389 |
Contact plug |
Oct. 22, 2002 |
| 6429471 |
Compound semiconductor field effect transistor and method for the fabrication thereof |
Aug. 6, 2002 |
| 6335562 |
Method and design for the suppression of single event upset failures in digital circuits made from GaAs and related compounds |
Jan. 1, 2002 |
| 6252262 |
Metal passivating layer for III-V semiconductors, and improved gate contact for III-V-based metal-insulator-semiconductor (MIS) devices |
Jun. 26, 2001 |
| 6232623 |
Semiconductor device on a sapphire substrate |
May. 15, 2001 |
| 6144050 |
Electronic devices with strontium barrier film and process for making same |
Nov. 7, 2000 |
| 6015979 |
Nitride-based semiconductor element and method for manufacturing the same |
Jan. 18, 2000 |
| 6008525 |
Minority carrier device comprising a passivating layer including a Group 13 element and a chalcogenide component |
Dec. 28, 1999 |
| 5965935 |
Low loss ridged microstrip line for monolithic microwave integrated circuit (MMIC) applications |
Oct. 12, 1999 |
| 5949095 |
Enhancement type MESFET |
Sep. 7, 1999 |
| 5945718 |
Self-aligned metal-oxide-compound semiconductor device and method of fabrication |
Aug. 31, 1999 |
| 5942792 |
Compound semiconductor device having a multilayer silicon structure between an active region and insulator layer for reducing surface state density at interface |
Aug. 24, 1999 |
| 5930611 |
Method for fabricating MIS device having GATE insulator of GaS or gallium sulfide |
Jul. 27, 1999 |
| 5903037 |
GaAs-based MOSFET, and method of making same |
May. 11, 1999 |
| 5825055 |
Fabricating high-dielectric constant oxides on semiconductors using a GE buffer layer |
Oct. 20, 1998 |
| 5811843 |
Field effect transistor |
Sep. 22, 1998 |
| 5796127 |
High electron mobility transistor |
Aug. 18, 1998 |
| 5760462 |
Metal, passivating layer, semiconductor, field-effect transistor |
Jun. 2, 1998 |
| 5753968 |
Low loss ridged microstrip line for monolithic microwave integrated circuit (MMIC) applications |
May. 19, 1998 |
| 5686756 |
Compound field effect transistor having a conductive layer comprising a III-V group compound |
Nov. 11, 1997 |
| 5682046 |
Heterojunction bipolar semiconductor device and its manufacturing method |
Oct. 28, 1997 |
| 5677565 |
Monocrystalline compound semiconductor wafer including non-monocrystalline peripheral region |
Oct. 14, 1997 |
| 5650638 |
Semiconductor device having a passivation layer |
Jul. 22, 1997 |
| 5646437 |
Indium antimonide (InSb) photodetector device and structure for infrared, visible and ultraviolet radiation |
Jul. 8, 1997 |
| 5616947 |
Semiconductor device having an MIS structure |
Apr. 1, 1997 |
| 5567980 |
Native oxide of an aluminum-bearing group III-V semiconductor |
Oct. 22, 1996 |
| 5557141 |
Method of doping, semiconductor device, and method of fabricating semiconductor device |
Sep. 17, 1996 |
| 5541118 |
Process for producing cadmium sulfide on a cadmium telluride surface |
Jul. 30, 1996 |
| 5541426 |
Semiconductor device with surface-inactivated layer |
Jul. 30, 1996 |
| 5539248 |
Semiconductor device with improved insulating/passivating layer of indium gallium fluoride (InGaF) |
Jul. 23, 1996 |
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