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Class Information
Number: 257/631
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With means to control surface effects > In compound semiconductor material (e.g., gaas)
Description: Subject matter wherein the means to control surface effects are provided in a compound semiconductor material (e.g., GaAs).










Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8415772 Method to prevent surface decomposition of III-V compound semiconductors Apr. 9, 2013
8217407 Light emitting device and method of manufacturing the same Jul. 10, 2012
8178951 Compound semiconductor substrate and control for electrical property thereof May. 15, 2012
8148802 Passivation of aluminum nitride substrates Apr. 3, 2012
8143686 Laser-induced structuring of substrate surfaces Mar. 27, 2012
8143147 Methods and systems for forming thin films Mar. 27, 2012
8129260 Semiconductor substrates having low defects and methods of manufacturing the same Mar. 6, 2012
8022412 Epitaxial structure having low defect density Sep. 20, 2011
7919815 Spinel wafers and methods of preparation Apr. 5, 2011
7858418 Light emitting device and method of manufacturing the same Dec. 28, 2010
7619301 GaAs semiconductor substrate and fabrication method thereof Nov. 17, 2009
7592629 Gallium nitride thin film on sapphire substrate having reduced bending deformation Sep. 22, 2009
7550782 Semiconductor device having an undercoat layer and method of manufacturing the same Jun. 23, 2009
7518151 Gallium nitride/sapphire thin film having reduced bending deformation Apr. 14, 2009
7442628 Semiconductor laser manufacturing method Oct. 28, 2008
7315045 Sapphire/gallium nitride laminate having reduced bending deformation Jan. 1, 2008
7291874 Laser dicing apparatus for a gallium arsenide wafer and method thereof Nov. 6, 2007
7192851 Semiconductor laser manufacturing method Mar. 20, 2007
7187058 Semiconductor component having a pn junction and a passivation layer applied on a surface Mar. 6, 2007
7109530 Nitride-based semiconductor element Sep. 19, 2006
7053480 Integrated circuit with offset pins May. 30, 2006
7030462 Heterojunction bipolar transistor having specified lattice constants Apr. 18, 2006
6963090 Enhancement mode metal-oxide-semiconductor field effect transistor Nov. 8, 2005
6906350 Delta doped silicon carbide metal-semiconductor field effect transistors having a gate disposed in a double recess structure Jun. 14, 2005
6841409 Group III-V compound semiconductor and group III-V compound semiconductor device using the same Jan. 11, 2005
6797991 Nitride semiconductor device Sep. 28, 2004
6759139 Nitride-based semiconductor element and method of forming nitride-based semiconductor Jul. 6, 2004
6756611 Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device Jun. 29, 2004
6727559 Compound semiconductor device Apr. 27, 2004
6713845 Nitride-based semiconductor element Mar. 30, 2004
6653663 Nitride semiconductor device Nov. 25, 2003
6653660 Vertical cavity-type semiconductor light-emitting device and optical module using vertical cavity-type semiconductor light-emitting device Nov. 25, 2003
6573528 Detector diode with internal calibration structure Jun. 3, 2003
6504185 Compound semiconductor device and method for controlling characteristics of the same Jan. 7, 2003
6469389 Contact plug Oct. 22, 2002
6429471 Compound semiconductor field effect transistor and method for the fabrication thereof Aug. 6, 2002
6335562 Method and design for the suppression of single event upset failures in digital circuits made from GaAs and related compounds Jan. 1, 2002
6252262 Metal passivating layer for III-V semiconductors, and improved gate contact for III-V-based metal-insulator-semiconductor (MIS) devices Jun. 26, 2001
6232623 Semiconductor device on a sapphire substrate May. 15, 2001
6144050 Electronic devices with strontium barrier film and process for making same Nov. 7, 2000
6015979 Nitride-based semiconductor element and method for manufacturing the same Jan. 18, 2000
6008525 Minority carrier device comprising a passivating layer including a Group 13 element and a chalcogenide component Dec. 28, 1999
5965935 Low loss ridged microstrip line for monolithic microwave integrated circuit (MMIC) applications Oct. 12, 1999
5949095 Enhancement type MESFET Sep. 7, 1999
5945718 Self-aligned metal-oxide-compound semiconductor device and method of fabrication Aug. 31, 1999
5942792 Compound semiconductor device having a multilayer silicon structure between an active region and insulator layer for reducing surface state density at interface Aug. 24, 1999
5930611 Method for fabricating MIS device having GATE insulator of GaS or gallium sulfide Jul. 27, 1999
5903037 GaAs-based MOSFET, and method of making same May. 11, 1999
5825055 Fabricating high-dielectric constant oxides on semiconductors using a GE buffer layer Oct. 20, 1998
5811843 Field effect transistor Sep. 22, 1998

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