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Class Information
Number: 257/630
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With means to control surface effects > With inversion-preventing shield electrode
Description: Subject matter wherein the means to control surface effects includes an electrode, insulated from the semiconductor surface, which electrode is configured to prevent inversion of the conductivity type of the surface due to surface effects.










Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8674471 Semiconductor device supplying charging current to element to be charged Mar. 18, 2014
8552535 Trench shielding structure for semiconductor device and method Oct. 8, 2013
8502311 Semiconductor transistor comprising two electrically conductive shield elements Aug. 6, 2013
8120107 Semiconductor device internally having insulated gate bipolar transistor Feb. 21, 2012
8110888 Edge termination for high voltage semiconductor device Feb. 7, 2012
7919836 Semiconductor device Apr. 5, 2011
7898029 Semiconductor device internally having insulated gate bipolar transistor Mar. 1, 2011
7893439 Silicon nitride film and semiconductor device Feb. 22, 2011
7875914 Switch mode power amplifier using mis-HEMT with field plate extension Jan. 25, 2011
RE41866 Semiconductor device and method of fabricating same Oct. 26, 2010
7808033 Shield plate electrode for semiconductor device Oct. 5, 2010
7741662 Ultra high voltage MOS transistor device Jun. 22, 2010
7576414 Electrostatic discharge (ESD) protection structure Aug. 18, 2009
7548112 Switch mode power amplifier using MIS-HEMT with field plate extension Jun. 16, 2009
7545025 Semiconductor device Jun. 9, 2009
7525178 Semiconductor device with capacitively coupled field plate Apr. 28, 2009
7473974 Semiconductor circuit device including a protection circuit Jan. 6, 2009
7456451 Ultra high voltage MOS transistor device Nov. 25, 2008
7307314 LDMOS transistor with improved gate shield Dec. 11, 2007
7227214 Semiconductor device and method of manufacturing the same Jun. 5, 2007
7071530 Multiple layer structure for substrate noise isolation Jul. 4, 2006
7029981 Radiation hardened bipolar junction transistor Apr. 18, 2006
6998679 Semiconductor device and method of fabricating the same Feb. 14, 2006
6940151 Silicon-rich low thermal budget silicon nitride for integrated circuits Sep. 6, 2005
6917076 Semiconductor device, a method of manufacturing the semiconductor device and a method of deleting information from the semiconductor device Jul. 12, 2005
6882014 Protection circuit for MOS components Apr. 19, 2005
6838770 Semiconductor device, designing method and designing device thereof Jan. 4, 2005
6797991 Nitride semiconductor device Sep. 28, 2004
6777767 Methods for producing packaged integrated circuit devices & packaged integrated circuit devices produced thereby Aug. 17, 2004
6765266 Semiconductor device with peripheral portion for withstanding surge voltage Jul. 20, 2004
6756619 Semiconductor constructions Jun. 29, 2004
6653663 Nitride semiconductor device Nov. 25, 2003
6642551 Stable high voltage semiconductor device structure Nov. 4, 2003
6597053 Integrated circuit arrangement with a number of structural elements and method for the production thereof Jul. 22, 2003
6563197 MOSgated device termination with guard rings under field plate May. 13, 2003
6515349 Semiconductor device and process for the same Feb. 4, 2003
6504185 Compound semiconductor device and method for controlling characteristics of the same Jan. 7, 2003
6472722 Termination structure for high voltage devices Oct. 29, 2002
6472723 Substrate contacts and shielding devices in a semiconductor component Oct. 29, 2002
6437409 Semiconductor device Aug. 20, 2002
6424014 Semiconductor element with electric field reducing device mounted therein for increasing dielectric strength Jul. 23, 2002
6420741 Ferroelectric memory having electromagnetic wave shield structure Jul. 16, 2002
6414362 Power semiconductor device Jul. 2, 2002
6414383 Very low magnetic field integrated circuit Jul. 2, 2002
6407445 MOSFET-based electrostatic discharge (ESD) protection structure with a floating heat sink Jun. 18, 2002
6404040 Semiconductor device with metal peripheral area Jun. 11, 2002
6380008 Edge stress reduction by noncoincident layers Apr. 30, 2002
6373088 Edge stress reduction by noncoincident layers Apr. 16, 2002
6344680 Planar semiconductor device Feb. 5, 2002
6323539 High voltage integrated circuit, high voltage junction terminating structure, and high voltage MIS transistor Nov. 27, 2001

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