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Browse by Category: Main > Physics
Class Information
Number: 257/63
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Non-single crystal, or recrystallized, semiconductor material forms part of active junction (including field-induced active junction) > Amorphous semiconductor material > Amorphous semiconductor is alloy or contains material to change band gap (e.g., si x ge 1-x , sin y )
Description: Subject matter wherein the amorphous semiconductor material is an alloy or contains material to change the energy gap between the valence and conduction bands.


Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
7449712 CMOS image sensor and method for fabricating the same Nov. 11, 2008
7427779 Microstructure for formation of a silicon and germanium on insulator substrate of Si1-XGeX type Sep. 23, 2008
7423283 Strain-silicon CMOS using etch-stop layer and method of manufacture Sep. 9, 2008
7417248 Transistor with shallow germanium implantation region in channel Aug. 26, 2008
7361420 Structure, magnetic recording medium, and method of producing the same Apr. 22, 2008
7348598 Thin film transistor and liquid crystal display device using the same Mar. 25, 2008
7341883 Silicon germanium semiconductive alloy and method of fabricating same Mar. 11, 2008
7339188 Polycrystalline silicon film containing Ni Mar. 4, 2008
7303949 High performance stress-enhanced MOSFETs using Si:C and SiGe epitaxial source/drain and method of manufacture Dec. 4, 2007
7297977 Semiconductor device Nov. 20, 2007
7274055 Method for improving transistor performance through reducing the salicide interface resistance Sep. 25, 2007
7262428 Strained Si/SiGe/SOI islands and processes of making same Aug. 28, 2007
7259387 Nonvolatile semiconductor memory device Aug. 21, 2007
7259427 Semiconductor device and method of manufacturing the same Aug. 21, 2007
7211458 Methods of fabricating strained semiconductor-on-insulator field-effect transistors and related devices May. 1, 2007
7205586 Semiconductor device having SiGe channel region Apr. 17, 2007
7196400 Semiconductor device with enhanced orientation ratio and method of manufacturing same Mar. 27, 2007
7176504 SiGe MOSFET with an erosion preventing Si.sub.x1Ge.sub.y1 layer Feb. 13, 2007
7176481 In situ doped embedded sige extension and source/drain for enhanced PFET performance Feb. 13, 2007
7157349 Method of manufacturing a semiconductor device with field isolation regions consisting of grooves filled with isolation material Jan. 2, 2007
7145175 Semiconductor circuit and method of fabricating the same Dec. 5, 2006
7119369 FET having epitaxial silicon growth Oct. 10, 2006
7112836 Method of forming a chalcogenide memory cell having a horizontal electrode and a memory cell produced by the method Sep. 26, 2006
7081387 Damascene gate multi-mesa MOSFET Jul. 25, 2006
7078345 Method for manufacturing a semiconductor device Jul. 18, 2006
7023018 SiGe transistor with strained layers Apr. 4, 2006
7015507 Thin film transistor and method of fabricating the same Mar. 21, 2006
7009208 Memory device and method of production and method of use of same and semiconductor device and method of production of same Mar. 7, 2006
7009200 Field effect transistor Mar. 7, 2006
7005676 Semiconductor device manufacturing method Feb. 28, 2006
6969870 Semiconductor device having an amorphous silicon-germanium gate electrode Nov. 29, 2005
6969878 Surround-gate semiconductor device encapsulated in an insulating medium Nov. 29, 2005
6951802 Crystalline semiconductor film, method of manufacturing the same, and semiconductor device Oct. 4, 2005
6936875 Insulated-gate field-effect transistor, method of fabricating same, and semiconductor device employing same Aug. 30, 2005
6930326 Semiconductor circuit and method of fabricating the same Aug. 16, 2005
6927417 Photoelectric conversion element and method of manufacturing the same Aug. 9, 2005
6924216 Semiconductor device having improved doping profiles and method of improving the doping profiles of a semiconductor device Aug. 2, 2005
6921914 Process for producing semiconductor article using graded epitaxial growth Jul. 26, 2005
6885028 Transistor array and active-matrix substrate Apr. 26, 2005
6872638 Method of manufacturing a semiconductor device Mar. 29, 2005
6872972 Method for forming silicon film with changing grain size by thermal process Mar. 29, 2005
6856002 Graded GexSe100-x concentration in PCRAM Feb. 15, 2005
6855992 Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same Feb. 15, 2005
6852602 Semiconductor crystal film and method for preparation thereof Feb. 8, 2005
6847093 Semiconductor integrated circuit device Jan. 25, 2005
6838695 CMOS device structure with improved PFET gate electrode Jan. 4, 2005
6815269 Thin-film transistor and method for manufacturing the same Nov. 9, 2004
6815802 Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology Nov. 9, 2004
6812490 Thin-film transistor, panel, and methods for producing them Nov. 2, 2004
6800874 CMOS process for double vertical channel thin film transistor Oct. 5, 2004

1 2 3


 
 
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