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Class Information
Number: 257/63
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Non-single crystal, or recrystallized, semiconductor material forms part of active junction (including field-induced active junction) > Amorphous semiconductor material > Amorphous semiconductor is alloy or contains material to change band gap (e.g., si x ge 1-x , sin y )
Description: Subject matter wherein the amorphous semiconductor material is an alloy or contains material to change the energy gap between the valence and conduction bands.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7612364 |
MOS devices with source/drain regions having stressed regions and non-stressed regions |
Nov. 3, 2009 |
| 7518212 |
Graded Ge.sub.xSe.sub.100-x concentration in PCRAM |
Apr. 14, 2009 |
| 7495313 |
Germanium substrate-type materials and approach therefor |
Feb. 24, 2009 |
| 7482616 |
Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same |
Jan. 27, 2009 |
| 7479667 |
Semiconductor device with modified mobility and thin film transistor having the same |
Jan. 20, 2009 |
| 7449712 |
CMOS image sensor and method for fabricating the same |
Nov. 11, 2008 |
| 7427779 |
Microstructure for formation of a silicon and germanium on insulator substrate of Si1-XGeX type |
Sep. 23, 2008 |
| 7423283 |
Strain-silicon CMOS using etch-stop layer and method of manufacture |
Sep. 9, 2008 |
| 7417248 |
Transistor with shallow germanium implantation region in channel |
Aug. 26, 2008 |
| 7361420 |
Structure, magnetic recording medium, and method of producing the same |
Apr. 22, 2008 |
| 7348598 |
Thin film transistor and liquid crystal display device using the same |
Mar. 25, 2008 |
| 7341883 |
Silicon germanium semiconductive alloy and method of fabricating same |
Mar. 11, 2008 |
| 7339188 |
Polycrystalline silicon film containing Ni |
Mar. 4, 2008 |
| 7303949 |
High performance stress-enhanced MOSFETs using Si:C and SiGe epitaxial source/drain and method of manufacture |
Dec. 4, 2007 |
| 7297977 |
Semiconductor device |
Nov. 20, 2007 |
| 7274055 |
Method for improving transistor performance through reducing the salicide interface resistance |
Sep. 25, 2007 |
| 7262428 |
Strained Si/SiGe/SOI islands and processes of making same |
Aug. 28, 2007 |
| 7259387 |
Nonvolatile semiconductor memory device |
Aug. 21, 2007 |
| 7259427 |
Semiconductor device and method of manufacturing the same |
Aug. 21, 2007 |
| 7211458 |
Methods of fabricating strained semiconductor-on-insulator field-effect transistors and related devices |
May. 1, 2007 |
| 7205586 |
Semiconductor device having SiGe channel region |
Apr. 17, 2007 |
| 7196400 |
Semiconductor device with enhanced orientation ratio and method of manufacturing same |
Mar. 27, 2007 |
| 7176504 |
SiGe MOSFET with an erosion preventing Si.sub.x1Ge.sub.y1 layer |
Feb. 13, 2007 |
| 7176481 |
In situ doped embedded sige extension and source/drain for enhanced PFET performance |
Feb. 13, 2007 |
| 7157349 |
Method of manufacturing a semiconductor device with field isolation regions consisting of grooves filled with isolation material |
Jan. 2, 2007 |
| 7145175 |
Semiconductor circuit and method of fabricating the same |
Dec. 5, 2006 |
| 7119369 |
FET having epitaxial silicon growth |
Oct. 10, 2006 |
| 7112836 |
Method of forming a chalcogenide memory cell having a horizontal electrode and a memory cell produced by the method |
Sep. 26, 2006 |
| 7081387 |
Damascene gate multi-mesa MOSFET |
Jul. 25, 2006 |
| 7078345 |
Method for manufacturing a semiconductor device |
Jul. 18, 2006 |
| 7023018 |
SiGe transistor with strained layers |
Apr. 4, 2006 |
| 7015507 |
Thin film transistor and method of fabricating the same |
Mar. 21, 2006 |
| 7009208 |
Memory device and method of production and method of use of same and semiconductor device and method of production of same |
Mar. 7, 2006 |
| 7009200 |
Field effect transistor |
Mar. 7, 2006 |
| 7005676 |
Semiconductor device manufacturing method |
Feb. 28, 2006 |
| 6969870 |
Semiconductor device having an amorphous silicon-germanium gate electrode |
Nov. 29, 2005 |
| 6969878 |
Surround-gate semiconductor device encapsulated in an insulating medium |
Nov. 29, 2005 |
| 6951802 |
Crystalline semiconductor film, method of manufacturing the same, and semiconductor device |
Oct. 4, 2005 |
| 6936875 |
Insulated-gate field-effect transistor, method of fabricating same, and semiconductor device employing same |
Aug. 30, 2005 |
| 6930326 |
Semiconductor circuit and method of fabricating the same |
Aug. 16, 2005 |
| 6927417 |
Photoelectric conversion element and method of manufacturing the same |
Aug. 9, 2005 |
| 6924216 |
Semiconductor device having improved doping profiles and method of improving the doping profiles of a semiconductor device |
Aug. 2, 2005 |
| 6921914 |
Process for producing semiconductor article using graded epitaxial growth |
Jul. 26, 2005 |
| 6885028 |
Transistor array and active-matrix substrate |
Apr. 26, 2005 |
| 6872638 |
Method of manufacturing a semiconductor device |
Mar. 29, 2005 |
| 6872972 |
Method for forming silicon film with changing grain size by thermal process |
Mar. 29, 2005 |
| 6856002 |
Graded GexSe100-x concentration in PCRAM |
Feb. 15, 2005 |
| 6855992 |
Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same |
Feb. 15, 2005 |
| 6852602 |
Semiconductor crystal film and method for preparation thereof |
Feb. 8, 2005 |
| 6847093 |
Semiconductor integrated circuit device |
Jan. 25, 2005 |
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