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Browse by Category: Main > Physics
Class Information
Number: 257/63
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Non-single crystal, or recrystallized, semiconductor material forms part of active junction (including field-induced active junction) > Amorphous semiconductor material > Amorphous semiconductor is alloy or contains material to change band gap (e.g., si x ge 1-x , sin y )
Description: Subject matter wherein the amorphous semiconductor material is an alloy or contains material to change the energy gap between the valence and conduction bands.










Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8704229 Partial poly amorphization for channeling prevention Apr. 22, 2014
8703528 Method for forming a back-side illuminated image sensor with a junction insulation Apr. 22, 2014
8614007 Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gases Dec. 24, 2013
8390028 Semiconductor device with epitaxial crystal layer embedded within susbstrate of dummy pattern region Mar. 5, 2013
8384080 Thin film transistor, display device, and electronic device Feb. 26, 2013
8386883 Lengthening life of a limited life memory Feb. 26, 2013
8314420 Semiconductor device with multiple component oxide channel Nov. 20, 2012
8288760 Field effect transistor, integrated circuit element, and method for manufacturing the same Oct. 16, 2012
8252638 Method for forming under a thin layer of a first material portions of another material and/or empty areas Aug. 28, 2012
8106466 MOS transistor and method for fabricating the same Jan. 31, 2012
8053666 Solar cell and manufacturing method of the solar cell Nov. 8, 2011
8013340 Semiconductor device with semiconductor body and method for the production of a semiconductor device Sep. 6, 2011
7999250 Silicon-germanium-carbon semiconductor structure Aug. 16, 2011
7993947 Silicon/germanium oxide particle inks, inkjet printing and processes for doping semiconductor substrates Aug. 9, 2011
7994508 Thin film transistors using thin film semiconductor materials Aug. 9, 2011
7973384 Phase change memory cell including multiple phase change material portions Jul. 5, 2011
7927713 Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gases Apr. 19, 2011
7884354 Germanium on insulator (GOI) semiconductor substrates Feb. 8, 2011
7872249 Nonvolatile memory device and methods of operating and fabricating the same Jan. 18, 2011
7855127 Method for manufacturing semiconductor substrate Dec. 21, 2010
7750338 Dual-SiGe epitaxy for MOS devices Jul. 6, 2010
7728324 Field effect transistor, integrated circuit element, and method for manufacturing the same Jun. 1, 2010
7719060 Tensile strain source using silicon/germanium in globally strained silicon May. 18, 2010
7700165 Method of forming deposited film and method of forming photovoltaic element Apr. 20, 2010
7659537 Field effect transistor Feb. 9, 2010
7612364 MOS devices with source/drain regions having stressed regions and non-stressed regions Nov. 3, 2009
7518212 Graded Ge.sub.xSe.sub.100-x concentration in PCRAM Apr. 14, 2009
7495313 Germanium substrate-type materials and approach therefor Feb. 24, 2009
7482616 Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same Jan. 27, 2009
7479667 Semiconductor device with modified mobility and thin film transistor having the same Jan. 20, 2009
7449712 CMOS image sensor and method for fabricating the same Nov. 11, 2008
7427779 Microstructure for formation of a silicon and germanium on insulator substrate of Si1-XGeX type Sep. 23, 2008
7423283 Strain-silicon CMOS using etch-stop layer and method of manufacture Sep. 9, 2008
7417248 Transistor with shallow germanium implantation region in channel Aug. 26, 2008
7361420 Structure, magnetic recording medium, and method of producing the same Apr. 22, 2008
7348598 Thin film transistor and liquid crystal display device using the same Mar. 25, 2008
7341883 Silicon germanium semiconductive alloy and method of fabricating same Mar. 11, 2008
7339188 Polycrystalline silicon film containing Ni Mar. 4, 2008
7303949 High performance stress-enhanced MOSFETs using Si:C and SiGe epitaxial source/drain and method of manufacture Dec. 4, 2007
7297977 Semiconductor device Nov. 20, 2007
7274055 Method for improving transistor performance through reducing the salicide interface resistance Sep. 25, 2007
7262428 Strained Si/SiGe/SOI islands and processes of making same Aug. 28, 2007
7259387 Nonvolatile semiconductor memory device Aug. 21, 2007
7259427 Semiconductor device and method of manufacturing the same Aug. 21, 2007
7211458 Methods of fabricating strained semiconductor-on-insulator field-effect transistors and related devices May. 1, 2007
7205586 Semiconductor device having SiGe channel region Apr. 17, 2007
7196400 Semiconductor device with enhanced orientation ratio and method of manufacturing same Mar. 27, 2007
7176481 In situ doped embedded sige extension and source/drain for enhanced PFET performance Feb. 13, 2007
7176504 SiGe MOSFET with an erosion preventing Si.sub.x1Ge.sub.y1 layer Feb. 13, 2007
7157349 Method of manufacturing a semiconductor device with field isolation regions consisting of grooves filled with isolation material Jan. 2, 2007

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