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Class Information
Number: 257/628
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Physical configuration of semiconductor (e.g., mesa, bevel, groove, etc.) > With specified crystal plane or axis > Major crystal plane or axis other than (100), (110), or (111) (e.g., (731) axis, crystal plane several degrees from (100) toward (011), etc.)
Description: Subject matter wherein the major crystal plane or axis is other than (100), (110), or (111).










Patents under this class:
1 2 3 4 5 6 7

Patent Number Title Of Patent Date Issued
8709923 Method of manufacturing III-nitride crystal Apr. 29, 2014
8704340 Stacked single crystal compound semiconductor substrates Apr. 22, 2014
8686561 Nitride-based semiconductor device and method for fabricating the same Apr. 1, 2014
8686435 Silicon carbide semiconductor device Apr. 1, 2014
8686434 Silicon carbide semiconductor device and method for manufacturing the same Apr. 1, 2014
8686398 Semiconductor light emitting device Apr. 1, 2014
8673697 Thin film transistor, method of fabricating the same and organic light emitting diode display device having the same Mar. 18, 2014
8674433 Semiconductor process Mar. 18, 2014
8652918 Nitride semiconductor structure Feb. 18, 2014
8618639 Semiconductor structure, semiconductor device having a semiconductor structure, and method for manufacturing a semiconductor structure Dec. 31, 2013
8592316 Nitride semiconductor substrate, production method therefor and nitride semiconductor device Nov. 26, 2013
8575728 Method and surface morphology of non-polar gallium nitride containing substrates Nov. 5, 2013
8575729 Semiconductor chip with linear expansion coefficients in direction parallel to sides of hexagonal semiconductor substrate and manufacturing method Nov. 5, 2013
8569106 Method for manufacturing silicon carbide semiconductor device Oct. 29, 2013
8558354 Semiconductor device and method for manufacturing the same Oct. 15, 2013
8536625 Electronic shutter with photogenerated charge extinguishment capability for back-illuminated image sensors Sep. 17, 2013
8519416 Method of fabricating nitride-based semiconductor light-emitting device and nitride-based semiconductor light-emitting device Aug. 27, 2013
8513676 Semiconductor device and method for manufacturing same Aug. 20, 2013
8507921 Single crystal compound semiconductor substrate Aug. 13, 2013
8502354 Break pattern of silicon wafer, silicon wafer, and silicon substrate Aug. 6, 2013
8492879 Semiconductor substrate and semiconductor device Jul. 23, 2013
8487327 Group-III nitride semiconductor device, epitaxial substrate, and method of fabricating group-III nitride semiconductor device Jul. 16, 2013
8445930 Nitride semiconductor element, methods for manufacturing nitride semiconductor element and nitride semiconductor layer, and nitride semiconductor light-emitting element May. 21, 2013
8441108 Nitride semiconductor element having electrode on m-plane and method for producing the same May. 14, 2013
RE44215 Semiconductor optoelectric device and method of manufacturing the same May. 14, 2013
8441045 Semiconductor device and method for manufacturing the same May. 14, 2013
8404042 Group-III nitride crystal composite Mar. 26, 2013
8384196 Formation of devices by epitaxial layer overgrowth Feb. 26, 2013
8378463 Orientation of electronic devices on mis-cut substrates Feb. 19, 2013
8368147 Strained semiconductor device with recessed channel Feb. 5, 2013
8368183 Nitride semiconductor device Feb. 5, 2013
8362575 Controlling the shape of source/drain regions in FinFETs Jan. 29, 2013
8350273 Semiconductor structure and a method of forming the same Jan. 8, 2013
8344402 Semiconductor light emitting device Jan. 1, 2013
8344403 Semiconductor light emitting device Jan. 1, 2013
8294246 Semiconductor structures including square cuts in single crystal silicon and method of forming same Oct. 23, 2012
8278672 Semiconductor light-emitting device and fabrication method thereof Oct. 2, 2012
8258051 Method of manufacturing III-nitride crystal, and semiconductor device utilizing the crystal Sep. 4, 2012
8247887 Method and surface morphology of non-polar gallium nitride containing substrates Aug. 21, 2012
8227898 Ohmic contact on a p-type principal surface tilting with respect to the c-plane Jul. 24, 2012
8212287 Nitride semiconductor structure and method of making same Jul. 3, 2012
8212336 Field effect transistor source or drain with a multi-facet surface Jul. 3, 2012
8207544 Group-III nitride semiconductor device, epitaxial substrate, and method of fabricating group-III nitride semiconductor device Jun. 26, 2012
8203151 Semiconductor device and method for fabricating the same Jun. 19, 2012
8183670 Semiconductor device and method of manufacturing the same May. 22, 2012
8174095 Semiconductor device and manufacturing method thereof May. 8, 2012
8159051 Semiconductor device and manufacturing method of semiconductor device Apr. 17, 2012
8110482 Miscut semipolar optoelectronic device Feb. 7, 2012
8110459 MOSFET having a channel region with enhanced stress and method of forming same Feb. 7, 2012
8089096 Field effect transistor with main surface including C-axis Jan. 3, 2012

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