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Class Information
Number: 257/627
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Physical configuration of semiconductor (e.g., mesa, bevel, groove, etc.) > With specified crystal plane or axis
Description: Subject matter wherein the physical configuration of the device is along a specified crystal plane or axis.


Sub-classes under this class:

Class Number Class Name Patents
257/628 Major crystal plane or axis other than (100), (110), or (111) (e.g., (731) axis, crystal plane several degrees from (100) toward (011), etc.) 202


Patents under this class:
1 2 3 4 5 6 7

Patent Number Title Of Patent Date Issued
7459720 Single crystal wafer and solar battery cell Dec. 2, 2008
7456040 Method for producing semiconductor optical device Nov. 25, 2008
7456450 CMOS devices with hybrid channel orientations and method for fabricating the same Nov. 25, 2008
7449767 Mixed orientation and mixed material semiconductor-on-insulator wafer Nov. 11, 2008
7446361 Capacitor and semiconductor device having a ferroelectric material Nov. 4, 2008
7439110 Strained HOT (hybrid orientation technology) MOSFETs Oct. 21, 2008
7432570 Semiconductor device and manufacturing method thereof Oct. 7, 2008
7423303 Strained silicon directly-on-insulator substrate with hybrid crystalline orientation and different stress levels Sep. 9, 2008
7420261 Bulk nitride mono-crystal including substrate for epitaxy Sep. 2, 2008
7414313 Polymeric conductor donor and transfer method Aug. 19, 2008
7411273 Nitride semiconductor substrate Aug. 12, 2008
7411274 Silicon semiconductor substrate and its manufacturing method Aug. 12, 2008
7405436 Stressed field effect transistors on hybrid orientation substrate Jul. 29, 2008
7400030 Schottky diode with silver layer contacting the ZnO and Mg.sub.xZn.sub.1-xO films Jul. 15, 2008
7396407 Trench-edge-defect-free recrystallization by edge-angle-optimized solid phase epitaxy: method and applications to hybrid orientation substrates Jul. 8, 2008
7388278 High performance field effect transistors on SOI substrate with stress-inducing material as buried insulator and methods Jun. 17, 2008
7385258 Transistors having v-shape source/drain metal contacts Jun. 10, 2008
7382029 Method and apparatus for improving integrated circuit device performance using hybrid crystal orientations Jun. 3, 2008
7368763 Semiconductor device and manufacturing method thereof May. 6, 2008
7348658 Multilayer silicon over insulator device Mar. 25, 2008
7339213 Semiconductor device having a triple gate transistor and method for manufacturing the same Mar. 4, 2008
7339255 Semiconductor device having bidirectionally inclined toward <1-100> and <11-20> relative to {0001} crystal planes Mar. 4, 2008
7335910 Thin film transistor, semiconductor device, display, crystallization method, and method of manufacturing thin film transistor Feb. 26, 2008
7329923 High-performance CMOS devices on hybrid crystal oriented substrates Feb. 12, 2008
7307282 Thin film transistors and semiconductor device Dec. 11, 2007
7298009 Semiconductor method and device with mixed orientation substrate Nov. 20, 2007
7285820 Flash memory device using semiconductor fin and method thereof Oct. 23, 2007
7285799 Semiconductor light emitting devices including in-plane light emitting layers Oct. 23, 2007
7282379 Nitride semiconductor, semiconductor device, and method of manufacturing the same Oct. 16, 2007
7282738 Fabrication of crystalline materials over substrates Oct. 16, 2007
7271043 Method for manufacturing strained silicon directly-on-insulator substrate with hybrid crystalline orientation and different stress levels Sep. 18, 2007
7271467 Multiple oxide thicknesses for merged memory and logic applications Sep. 18, 2007
7268377 Structure and method of fabricating a hybrid substrate for high-performance hybrid-orientation silicon-on-insulator CMOS devices Sep. 11, 2007
7256478 Notched compound semiconductor wafer Aug. 14, 2007
7256477 Notched compound semiconductor wafer Aug. 14, 2007
7256476 Notched compound semiconductor wafer Aug. 14, 2007
7226805 Sequential lithographic methods to reduce stacking fault nucleation sites Jun. 5, 2007
7208803 Method of forming a raised source/drain and a semiconductor device employing the same Apr. 24, 2007
7208815 CMOS logic gate fabricated on hybrid crystal orientations and method of forming thereof Apr. 24, 2007
7199451 Growing [110] silicon on [001]-oriented substrate with rare-earth oxide buffer film Apr. 3, 2007
7196400 Semiconductor device with enhanced orientation ratio and method of manufacturing same Mar. 27, 2007
7190076 Electrode for p-type Group III nitride compound semiconductor layer and method for producing the same Mar. 13, 2007
7190050 Integrated circuit on corrugated substrate Mar. 13, 2007
7187059 Compressive SiGe <110> growth and structure of MOSFET devices Mar. 6, 2007
7183629 Metal line having an increased resistance to electromigration along an interface of a dielectric barrier layer by implanting material into the metal line Feb. 27, 2007
7164172 Semiconductor device and method of manufacturing same Jan. 16, 2007
7148559 Substrate engineering for optimum CMOS device performance Dec. 12, 2006
7132730 Bulk nitride mono-crystal including substrate for epitaxy Nov. 7, 2006
7109568 Semiconductor device including n-channel fets and p-channel fets with improved drain current characteristics Sep. 19, 2006
7102166 Hybrid orientation field effect transistors (FETs) Sep. 5, 2006

1 2 3 4 5 6 7


 
 
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