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Class Information
Number: 257/624
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Physical configuration of semiconductor (e.g., mesa, bevel, groove, etc.) > Mesa structure (e.g., including undercut or stepped mesa configuration or having constant slope taper) > With low resistance ohmic connection means along exposed mesa edge (e.g., contact or heavily doped region along exposed mesa to reduce "skin effect" losses in microwave diode)
Description: Subject matter wherein there is a low resistance ohmic connection means along the exposed edge of the mesa.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7381997 |
Lateral silicided diodes |
Jun. 3, 2008 |
| 7368822 |
Copper metalized ohmic contact electrode of compound device |
May. 6, 2008 |
| 7335927 |
Lateral silicided diodes |
Feb. 26, 2008 |
| 7208784 |
Single-electron transistor for detecting biomolecules |
Apr. 24, 2007 |
| 7170101 |
Nitride-based semiconductor light-emitting device and manufacturing method thereof |
Jan. 30, 2007 |
| 7154148 |
Hybrid circuit and electronic device using same |
Dec. 26, 2006 |
| 6906401 |
Method to fabricate high-performance NPN transistors in a BiCMOS process |
Jun. 14, 2005 |
| 6888171 |
Light emitting diode |
May. 3, 2005 |
| 6853079 |
Conductive trace with reduced RF impedance resulting from the skin effect |
Feb. 8, 2005 |
| 6835967 |
Semiconductor diodes with fin structure |
Dec. 28, 2004 |
| 6818952 |
Damascene gate multi-mesa MOSFET |
Nov. 16, 2004 |
| 6794720 |
Dynamic threshold voltage metal insulator field effect transistor |
Sep. 21, 2004 |
| 6710410 |
Hybrid circuit and electronic device using same |
Mar. 23, 2004 |
| 6653653 |
Single-electron transistors and fabrication methods in which a projecting feature defines spacing between electrodes |
Nov. 25, 2003 |
| 6515334 |
Hybrid circuit and electronic device using same |
Feb. 4, 2003 |
| 6515348 |
Semiconductor device with FET MESA structure and vertical contact electrodes |
Feb. 4, 2003 |
| 6515340 |
Semiconductor device |
Feb. 4, 2003 |
| 6437423 |
Method for fabricating semiconductor components with high aspect ratio features |
Aug. 20, 2002 |
| 6407443 |
Nanoscale patterning for the formation of extensive wires |
Jun. 18, 2002 |
| 6359290 |
Self-aligned bump bond infrared focal plane array architecture |
Mar. 19, 2002 |
| 6337513 |
Chip packaging system and method using deposited diamond film |
Jan. 8, 2002 |
| 6329702 |
High frequency carrier |
Dec. 11, 2001 |
| 6274889 |
Method for forming ohmic electrode, and semiconductor device |
Aug. 14, 2001 |
| 6268655 |
Semiconductor device including edge bond pads and methods |
Jul. 31, 2001 |
| 6268642 |
Wafer level package |
Jul. 31, 2001 |
| 6245653 |
Method of filling an opening in an insulating layer |
Jun. 12, 2001 |
| 6034415 |
Lateral RF MOS device having a combined source structure |
Mar. 7, 2000 |
| 5986331 |
Microwave monolithic integrated circuit with coplaner waveguide having silicon-on-insulator composite substrate |
Nov. 16, 1999 |
| 5977604 |
Buried layer in a semiconductor formed by bonding |
Nov. 2, 1999 |
| 5793055 |
Hybrid electronic devices, particularly Josephson transistors |
Aug. 11, 1998 |
| 5668401 |
Chessboard pattern layout for scribe lines |
Sep. 16, 1997 |
| 5640043 |
High voltage silicon diode with optimum placement of silicon-germanium layers |
Jun. 17, 1997 |
| 5525818 |
Reducing extrinsic base-collector capacitance |
Jun. 11, 1996 |
| 5463246 |
Large scale high density semiconductor apparatus |
Oct. 31, 1995 |
| 5449953 |
Monolithic microwave integrated circuit on high resistivity silicon |
Sep. 12, 1995 |
| 5343070 |
Mesa type PIN diode |
Aug. 30, 1994 |
| 5343071 |
Semiconductor structures having dual surface via holes |
Aug. 30, 1994 |
| 5231302 |
Semiconductor device including an oblique surface and an electrode crossing the oblique surface |
Jul. 27, 1993 |
| 5187554 |
Bipolar transistor |
Feb. 16, 1993 |
| 5166759 |
Semiconductor-type laminated ceramic capacitor with a grain boundary-insulated structure |
Nov. 24, 1992 |
| 5122849 |
Silicon thin film transistor |
Jun. 16, 1992 |
| 4947223 |
Semiconductor devices incorporating multilayer interference regions |
Aug. 7, 1990 |
| 4943839 |
Contact type image sensor |
Jul. 24, 1990 |
| 4937638 |
Edge emitting light emissive diode |
Jun. 26, 1990 |
| 4933737 |
Polysilon contacts to IC mesas |
Jun. 12, 1990 |
| 4916716 |
Varactor diode |
Apr. 10, 1990 |
| 4910154 |
Manufacture of monolithic infrared focal plane arrays |
Mar. 20, 1990 |
| 4889565 |
High temperature photovoltaic system |
Dec. 26, 1989 |
| 4876212 |
Process for fabricating complimentary semiconductor devices having pedestal structures |
Oct. 24, 1989 |
| 4871921 |
Detector array assembly having bonding means joining first and second surfaces except where detectors are disposed |
Oct. 3, 1989 |
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