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Class Information
Number: 257/62
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Non-single crystal, or recrystallized, semiconductor material forms part of active junction (including field-induced active junction) > Amorphous semiconductor material > With impurity other than hydrogen to passivate dangling bonds (e.g., halide)
Description: Subject matter wherein the semiconductor active junction amorphous field effect device is doped with an impurity other than hydrogen (e.g., a halide) for providing electrical stability by completing chemical bonds between semiconductor atoms which were not completed due to the amorphous nature of the semiconductor active layer material.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7405474 |
Low cost thermally enhanced semiconductor package |
Jul. 29, 2008 |
| 7208751 |
Non-volatile semiconductor memory device allowing shrinking of memory cell |
Apr. 24, 2007 |
| 7196400 |
Semiconductor device with enhanced orientation ratio and method of manufacturing same |
Mar. 27, 2007 |
| 7145175 |
Semiconductor circuit and method of fabricating the same |
Dec. 5, 2006 |
| 7119363 |
Thin film transistor formed on a transparent substrate |
Oct. 10, 2006 |
| 7112545 |
Passivation of material using ultra-fast pulsed laser |
Sep. 26, 2006 |
| 7098476 |
Multilayer interconnect structure containing air gaps and method for making |
Aug. 29, 2006 |
| 7034336 |
Capacitorless 1-transistor DRAM cell and fabrication method |
Apr. 25, 2006 |
| 6930326 |
Semiconductor circuit and method of fabricating the same |
Aug. 16, 2005 |
| 6873055 |
Integrated circuit arrangement with field-shaping electrical conductor |
Mar. 29, 2005 |
| 6818496 |
Silicon on insulator DRAM process utilizing both fully and partially depleted devices |
Nov. 16, 2004 |
| 6812136 |
Method of making a semiconductor device having a multilayer metal film of titanium/titanium nitride/tungsten/tungsten carbide |
Nov. 2, 2004 |
| 6787804 |
Semiconductor acceleration sensor |
Sep. 7, 2004 |
| 6734499 |
Operation method of semiconductor devices |
May. 11, 2004 |
| 6720575 |
Semiconductor device with a semiconductor layer over a surface having a recess pitch no smaller than 0.3 microns |
Apr. 13, 2004 |
| 6707064 |
Test element group structure |
Mar. 16, 2004 |
| 6664566 |
Photoelectric conversion device and method of making the same |
Dec. 16, 2003 |
| 6600196 |
Thin film transistor, and manufacturing method thereof |
Jul. 29, 2003 |
| 6576925 |
Thin film transistor, liquid crystal display panel, and manufacturing method of thin film transistor |
Jun. 10, 2003 |
| 6521991 |
Thermoelectric module |
Feb. 18, 2003 |
| 6448577 |
Semiconductor device with grain boundaries |
Sep. 10, 2002 |
| 6346716 |
Semiconductor material having particular oxygen concentration and semiconductor device comprising the same |
Feb. 12, 2002 |
| 6294814 |
Cleaved silicon thin film with rough surface |
Sep. 25, 2001 |
| 6288412 |
Thin film transistors for display devices having two polysilicon active layers of different thicknesses |
Sep. 11, 2001 |
| 6265730 |
Thin-film transistor and method of producing the same |
Jul. 24, 2001 |
| 6225667 |
Leaky lower interface for reduction of floating body effect in SOI devices |
May. 1, 2001 |
| 6184541 |
Thin film transistor and method of producing the same |
Feb. 6, 2001 |
| 6144041 |
Semiconductor device having an active layer with no grain boundary |
Nov. 7, 2000 |
| 6140667 |
Semiconductor thin film in semiconductor device having grain boundaries |
Oct. 31, 2000 |
| 6114734 |
Transistor structure incorporating a solid deuterium source for gate interface passivation |
Sep. 5, 2000 |
| 6093937 |
Semiconductor thin film, semiconductor device and manufacturing method thereof |
Jul. 25, 2000 |
| 6057557 |
Semiconductor substrate semiconductor device and liquid crystal display device |
May. 2, 2000 |
| 6011271 |
Semiconductor device and method of fabricating the same |
Jan. 4, 2000 |
| 5959312 |
Sensor with doped microcrystalline silicon channel leads with bubble formation protection means |
Sep. 28, 1999 |
| 5959313 |
Thin film semiconductor having a monocrystalline region containing carbon, nitrogen and oxygen and crystallization promotor metal component |
Sep. 28, 1999 |
| 5950067 |
Method of fabricating a thermoelectric module |
Sep. 7, 1999 |
| 5923050 |
Amorphous silicon TFT |
Jul. 13, 1999 |
| 5808318 |
Polycrystalline semiconductor thin film for semiconductor TFT on a substrate having a mobility in a longitudinal direction greater than in a width direction |
Sep. 15, 1998 |
| 5744818 |
Insulated gate field effect semiconductor device |
Apr. 28, 1998 |
| 5731613 |
Semiconductor device having a monocrystalline layer composed of carbon, oxygen, hydrogen and nitrogen atoms |
Mar. 24, 1998 |
| 5682037 |
Thin film detector of ultraviolet radiation, with high spectral selectivity option |
Oct. 28, 1997 |
| 5644145 |
Process for the formation of an amorphous silicon deposited film with intermittent irradiation of inert gas plasma |
Jul. 1, 1997 |
| 5565691 |
Thin film semiconductor system |
Oct. 15, 1996 |
| 5371380 |
Si- and/or Ge-containing non-single crystalline semiconductor film with an average radius of 3.5 A or less as for microvoids contained therein and a microvoid density 1.times.10.sup.(19) (cm.s |
Dec. 6, 1994 |
| 5308999 |
MOS FET having a thin film SOI structure |
May. 3, 1994 |
| 5103284 |
Semiconductor with ordered clusters |
Apr. 7, 1992 |
| 5060041 |
Amorphous silicon photosensor |
Oct. 22, 1991 |
| 5051786 |
Passivated polycrystalline semiconductors quantum well/superlattice structures fabricated thereof |
Sep. 24, 1991 |
| 5034795 |
Electrically insulating substrate |
Jul. 23, 1991 |
| 4893154 |
Electroluminescent device |
Jan. 9, 1990 |
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