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Class Information
Number: 257/618
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Physical configuration of semiconductor (e.g., mesa, bevel, groove, etc.)
Description: Subject matter wherein the device has a particular physical form, such as a mesa or bevel or groove.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 5208469 |
Wafer scale integrated circuit and method of forming signal propagation path therein |
May. 4, 1993 |
| 5196378 |
Method of fabricating an integrated circuit having active regions near a die edge |
Mar. 23, 1993 |
| 5164815 |
Integrated circuit device and method to prevent cracking during surface mount |
Nov. 17, 1992 |
| 5132751 |
Light-emitting diode array with projections |
Jul. 21, 1992 |
| 5121180 |
Accelerometer with central mass in support |
Jun. 9, 1992 |
| 5109264 |
Semiconductor wafers having a shape suitable for thermal treatment |
Apr. 28, 1992 |
| 5087949 |
Light-emitting diode with diagonal faces |
Feb. 11, 1992 |
| 5072312 |
Thyristor with high positive and negative blocking capability |
Dec. 10, 1991 |
| 5021862 |
Beveled semiconductor silicon wafer and manufacturing method thereof |
Jun. 4, 1991 |
| 5003368 |
Turn-off thyristor |
Mar. 26, 1991 |
| 5001535 |
Static induction type thyristor |
Mar. 19, 1991 |
| 4896194 |
Semiconductor device having an integrated circuit formed on a compound semiconductor layer |
Jan. 23, 1990 |
| 4894698 |
Field effect pressure sensor |
Jan. 16, 1990 |
| 4893155 |
Heterojunction field effect transistor device and process of fabrication thereof |
Jan. 9, 1990 |
| 4888300 |
Submerged wall isolation of silicon islands |
Dec. 19, 1989 |
| 4823180 |
Photo-transistor in MOS thin-film technology and method for production and operation thereof |
Apr. 18, 1989 |
| 4783225 |
Wafer and method of working the same |
Nov. 8, 1988 |
| 4748483 |
Mechanical pressure Schottky contact array |
May. 31, 1988 |
| 4742377 |
Schottky barrier device with doped composite guard ring |
May. 3, 1988 |
| 4706100 |
High temperature hetero-epitaxial pressure sensor |
Nov. 10, 1987 |
| 4675716 |
Insulator coating for improved step coverage in VLSI devices |
Jun. 23, 1987 |
| 4672415 |
Power thyristor on a substrate |
Jun. 9, 1987 |
| 4651189 |
Semiconductor device provided with electrically floating control electrode |
Mar. 17, 1987 |
| 4586070 |
Thyristor with abrupt anode emitter junction |
Apr. 29, 1986 |
| 4570173 |
High-aspect-ratio hollow diffused regions in a semiconductor body |
Feb. 11, 1986 |
| 4547789 |
High current thin film transistor |
Oct. 15, 1985 |
| 4471369 |
Robotic pressure imagers |
Sep. 11, 1984 |
| 4443811 |
CMOS Integrated circuit device |
Apr. 17, 1984 |
| 4441115 |
Thyristor having a center pn junction formed by plastic deformation of the crystal lattice |
Apr. 3, 1984 |
| 4432007 |
Ultrasonic transducer fabricated as an integral part of a monolithic integrated circuit |
Feb. 14, 1984 |
| 4403241 |
Method for etching III-V semiconductors and devices made by this method |
Sep. 6, 1983 |
| 4366494 |
Josephson junction and a method of making the same |
Dec. 28, 1982 |
| 4339689 |
Light emitting diode and method of making the same |
Jul. 13, 1982 |
| 4317091 |
Negative semiconductor resistance |
Feb. 23, 1982 |
| 4316208 |
Light-emitting semiconductor device and method of fabricating same |
Feb. 16, 1982 |
| 4191595 |
Method of manufacturing PN junctions in a semiconductor region to reach an isolation layer without exposing the semiconductor region surface |
Mar. 4, 1980 |
| 4178197 |
Formation of epitaxial tunnels utilizing oriented growth techniques |
Dec. 11, 1979 |
| 4173494 |
Glass support light energy converter |
Nov. 6, 1979 |
| 4170496 |
Beveled wafer for thermal gradient zone melting utilizing a beveled wafer edge |
Oct. 9, 1979 |
| 4170490 |
Process for thermal gradient zone melting utilizing a beveled wafer edge |
Oct. 9, 1979 |
| 4168992 |
Process for thermal gradient zone melting utilizing a beveled wafer and a beveled guard ring |
Sep. 25, 1979 |
| 4153910 |
Molded semiconductor device with header leads |
May. 8, 1979 |
| 4137543 |
Light detector arrangement |
Jan. 30, 1979 |
| 4127862 |
Integrated optical detectors |
Nov. 28, 1978 |
| 4104085 |
Method of manufacturing a semiconductor device by implanting ions through bevelled oxide layer in single masking step |
Aug. 1, 1978 |
| 4102714 |
Process for fabricating a low breakdown voltage device for polysilicon gate technology |
Jul. 25, 1978 |
| 4024559 |
Electroluminescent diodes and a method of manufacturing same |
May. 17, 1977 |
| 4023196 |
Negative resistance element composed of a semiconductor element |
May. 10, 1977 |
| 4010534 |
Process for making a deep diode atomic battery |
Mar. 8, 1977 |
| 4011574 |
Junction arrays for superconducting and nonsuperconducting application |
Mar. 8, 1977 |
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