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Class Information
Number: 257/618
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Physical configuration of semiconductor (e.g., mesa, bevel, groove, etc.)
Description: Subject matter wherein the device has a particular physical form, such as a mesa or bevel or groove.


Sub-classes under this class:

Class Number Class Name Patents
257/622 Groove 611
257/623 Mesa structure (e.g., including undercut or stepped mesa configuration or having constant slope taper) 393
257/621 With electrical contact in hole in semiconductor (e.g., lead extends through semiconductor body) 252
257/620 With peripheral feature due to separation of smaller semiconductor chip from larger wafer (e.g., scribe region, or means to prevent edge effects such as leakage current at peripheral chip separation area) 451
257/627 With specified crystal plane or axis 339
257/619 With thin active central semiconductor portion surrounded by thicker inactive shoulder (e.g., for mechanical support) 120


Patents under this class:
1 2 3 4 5 6 7 8 9 10

Patent Number Title Of Patent Date Issued
6291897 Carriers including projected contact structures for engaging bumped semiconductor devices Sep. 18, 2001
6291863 Thin film transistor having a multi-layer stacked channel and its manufacturing method Sep. 18, 2001
6288648 Apparatus and method for determining a need to change a polishing pad conditioning wheel Sep. 11, 2001
6285072 Semiconductor device containing a porous structure and method of manufacturing the same Sep. 4, 2001
6271578 Crack stops Aug. 7, 2001
6268655 Semiconductor device including edge bond pads and methods Jul. 31, 2001
6268641 Semiconductor wafer having identification indication and method of manufacturing the same Jul. 31, 2001
6265234 Alignment system for a spherical device Jul. 24, 2001
6255721 Method and tool for handling micro-mechanical structures Jul. 3, 2001
6245630 Spherical shaped semiconductor integrated circuit Jun. 12, 2001
6245653 Method of filling an opening in an insulating layer Jun. 12, 2001
6246090 Power trench transistor device source region formation using silicon spacer Jun. 12, 2001
6242817 Fabricated wafer for integration in a wafer structure Jun. 5, 2001
6242761 Nitride compound semiconductor light emitting device Jun. 5, 2001
6242783 Semiconductor device with insulated gate transistor Jun. 5, 2001
6236102 Chip type thin film capacitor, and manufacturing method therefor May. 22, 2001
6236104 Silicon on insulator structure from low defect density single crystal silicon May. 22, 2001
6223331 Semiconductor circuit design method for employing spacing constraints and circuits thereof Apr. 24, 2001
6221165 High temperature plasma-assisted diffusion Apr. 24, 2001
6218701 Power MOS device with increased channel width and process for forming same Apr. 17, 2001
6215172 Grinding technique for integrated circuits Apr. 10, 2001
6208007 Buried layer in a semiconductor formed by bonding Mar. 27, 2001
6198158 Memory circuit including a semiconductor structure having more usable substrate area Mar. 6, 2001
6184570 Integrated circuit dies including thermal stress reducing grooves and microelectronic packages utilizing the same Feb. 6, 2001
6178654 Method and system for aligning spherical-shaped objects Jan. 30, 2001
6150708 Advanced CMOS circuitry that utilizes both sides of a wafer surface for increased circuit density Nov. 21, 2000
6136617 Alignment system for a spherical shaped device Oct. 24, 2000
6127714 Method for producing semiconductor device and photodetector device Oct. 3, 2000
6127717 Totally self-aligned transistor with polysilicon shallow trench isolation Oct. 3, 2000
6121651 Dram cell with three-sided-gate transfer device Sep. 19, 2000
6114747 Process design for wafer edge in VLSI Sep. 5, 2000
6104081 Semiconductor device with semiconductor elements formed in a layer of semiconductor material glued on a support wafer Aug. 15, 2000
6100533 Three-axis asymmetric radiation detector system Aug. 8, 2000
6100576 Silicon substrate having a recess for receiving an element Aug. 8, 2000
6097050 Memory configuration with self-aligning non-integrated capacitor configuration Aug. 1, 2000
6093935 Transistor and method for manufacturing the same Jul. 25, 2000
6091083 Gallium nitride type compound semiconductor light-emitting device having buffer layer with non-flat surface Jul. 18, 2000
6091130 Semiconductor device having structure suitable for CMP process Jul. 18, 2000
6071315 Two-dimensional to three-dimensional VLSI design Jun. 6, 2000
6060665 Grooved paths for printed wiring board with obstructions May. 9, 2000
6054748 High voltage semiconductor power device Apr. 25, 2000
6054768 Metal fill by treatment of mobility layers Apr. 25, 2000
6051889 Semiconductor device having a flip-chip structure Apr. 18, 2000
6051871 Heterojunction bipolar transistor having improved heat dissipation Apr. 18, 2000
6043507 Thin film transistors and methods of making Mar. 28, 2000
6040618 Multi-chip module employing a carrier substrate with micromachined alignment structures and method of forming Mar. 21, 2000
6034417 Semiconductor structure having more usable substrate area and method for forming same Mar. 7, 2000
6028347 Semiconductor structures and packaging methods Feb. 22, 2000
6025638 Structure for precision multichip assembly Feb. 15, 2000
6020624 Semiconductor package with bi-substrate die Feb. 1, 2000

1 2 3 4 5 6 7 8 9 10


 
 
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