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Class Information
Number: 257/616
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Including semiconductor material other than silicon or gallium arsenide (gaas) (e.g., pb x sn 1-x te) > Containing germanium, ge
Description: Subject matter wherein the semiconducting material other than silicon or gallium arsenide contains germanium (Ge).
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7459406 |
Laser processing unit, laser processing method, and method for manufacturing semiconductor device |
Dec. 2, 2008 |
| 7446393 |
Co-sputter deposition of metal-doped chalcogenides |
Nov. 4, 2008 |
| 7442993 |
Ultra-thin, high quality strained silicon-on-insulator formed by elastic strain transfer |
Oct. 28, 2008 |
| 7436035 |
Method of fabricating a field effect transistor structure with abrupt source/drain junctions |
Oct. 14, 2008 |
| 7436046 |
Semiconductor device and manufacturing method of the same |
Oct. 14, 2008 |
| 7432559 |
Silicide formation on SiGe |
Oct. 7, 2008 |
| 7416957 |
Method for forming a strained Si-channel in a MOSFET structure |
Aug. 26, 2008 |
| 7405465 |
Deposited semiconductor structure to minimize n-type dopant diffusion and method of making |
Jul. 29, 2008 |
| 7402891 |
Semiconductor polymers, method for the production thereof and an optoelectronic component |
Jul. 22, 2008 |
| 7397101 |
Germanium silicon heterostructure photodetectors |
Jul. 8, 2008 |
| 7393735 |
Structure for and method of fabricating a high-mobility field-effect transistor |
Jul. 1, 2008 |
| 7391098 |
Semiconductor substrate, semiconductor device and method of manufacturing the same |
Jun. 24, 2008 |
| 7365410 |
Semiconductor structure having a metallic buffer layer and method for forming |
Apr. 29, 2008 |
| 7358571 |
Isolation spacer for thin SOI devices |
Apr. 15, 2008 |
| 7355214 |
Field effect transistor and fabrication thereof, semiconductor device and fabrication thereof, logic circuit including the semiconductor device, and semiconductor substrate |
Apr. 8, 2008 |
| 7335929 |
Transistor with a strained region and method of manufacture |
Feb. 26, 2008 |
| 7329923 |
High-performance CMOS devices on hybrid crystal oriented substrates |
Feb. 12, 2008 |
| 7326969 |
Semiconductor device incorporating thyristor-based memory and strained silicon |
Feb. 5, 2008 |
| 7320931 |
Interfacial layer for use with high k dielectric materials |
Jan. 22, 2008 |
| 7317242 |
Semiconductor device including p-type silicon layer including implanted germanium |
Jan. 8, 2008 |
| 7307908 |
Software refreshed memory device and method |
Dec. 11, 2007 |
| 7303949 |
High performance stress-enhanced MOSFETs using Si:C and SiGe epitaxial source/drain and method of manufacture |
Dec. 4, 2007 |
| 7304328 |
Use of hydrogen implantation to improve material properties of silicon-germanium-on-insulator material made by thermal diffusion |
Dec. 4, 2007 |
| 7288819 |
Stable PD-SOI devices and methods |
Oct. 30, 2007 |
| 7279751 |
Semiconductor laser device and manufacturing method thereof |
Oct. 9, 2007 |
| 7262465 |
P-channel MOS transistor and fabrication process thereof |
Aug. 28, 2007 |
| 7253045 |
Selective P-channel V.sub.T adjustment in SiGe system for leakage optimization |
Aug. 7, 2007 |
| 7247546 |
Method of forming strained silicon materials with improved thermal conductivity |
Jul. 24, 2007 |
| 7244654 |
Drive current improvement from recessed SiGe incorporation close to gate |
Jul. 17, 2007 |
| 7244958 |
Integration of strained Ge into advanced CMOS technology |
Jul. 17, 2007 |
| 7238985 |
Trench type mosgated device with strained layer on trench sidewall |
Jul. 3, 2007 |
| 7235812 |
Method of creating defect free high Ge content (>25%) SiGe-on-insulator (SGOI) substrates using wafer bonding techniques |
Jun. 26, 2007 |
| 7235469 |
Semiconductor device and method for manufacturing the same |
Jun. 26, 2007 |
| 7233051 |
Germanium/silicon avalanche photodetector with separate absorption and multiplication regions |
Jun. 19, 2007 |
| 7214993 |
Non-planar transistor having germanium channel region and method of manufacturing the same |
May. 8, 2007 |
| 7205586 |
Semiconductor device having SiGe channel region |
Apr. 17, 2007 |
| 7202503 |
III-V and II-VI compounds as template materials for growing germanium containing film on silicon |
Apr. 10, 2007 |
| 7196400 |
Semiconductor device with enhanced orientation ratio and method of manufacturing same |
Mar. 27, 2007 |
| 7193322 |
Sacrificial shallow trench isolation oxide liner for strained-silicon channel CMOS devices |
Mar. 20, 2007 |
| 7183576 |
Epitaxial and polycrystalline growth of Si.sub.1-x-yGe.sub.xC.sub.y and Si.sub.1-yC.sub.y alloy layers on Si by UHV-CVD |
Feb. 27, 2007 |
| 7183611 |
SRAM constructions, and electronic systems comprising SRAM constructions |
Feb. 27, 2007 |
| 7180138 |
SOI structure having a SiGe layer interposed between the silicon and the insulator |
Feb. 20, 2007 |
| 7176504 |
SiGe MOSFET with an erosion preventing Si.sub.x1Ge.sub.y1 layer |
Feb. 13, 2007 |
| 7170110 |
Semiconductor device and method for fabricating the same |
Jan. 30, 2007 |
| 7170145 |
Method of manufacturing semiconductor device, flexible substrate, and semiconductor device |
Jan. 30, 2007 |
| 7157737 |
Structures with seeded single-crystal domains |
Jan. 2, 2007 |
| 7151307 |
Integrated semiconductor circuits on photo-active Germanium substrates |
Dec. 19, 2006 |
| 7148526 |
Germanium MOSFET devices and methods for making same |
Dec. 12, 2006 |
| 7145168 |
Semiconductor device |
Dec. 5, 2006 |
| 7135721 |
Heterojunction bipolar transistor having reduced driving voltage requirements |
Nov. 14, 2006 |
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