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Class Information
Number: 257/616
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Including semiconductor material other than silicon or gallium arsenide (gaas) (e.g., pb x sn 1-x te) > Containing germanium, ge
Description: Subject matter wherein the semiconducting material other than silicon or gallium arsenide contains germanium (Ge).










Patents under this class:
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Patent Number Title Of Patent Date Issued
8710490 Semiconductor device having germanium active layer with underlying parasitic leakage barrier layer Apr. 29, 2014
8703596 Semiconductor device and method of manufacturing semiconductor device Apr. 22, 2014
8669163 Tunnel field-effect transistors with superlattice channels Mar. 11, 2014
8664095 Black GE based on crystalline/amorphous core/shell nanoneedle arrays Mar. 4, 2014
8624295 SRAM devices utilizing strained-channel transistors and methods of manufacture Jan. 7, 2014
8624356 Group III nitride semiconductor substrate production method, and group III nitride semiconductor substrate Jan. 7, 2014
8598042 Device manufacturing and cleaning method Dec. 3, 2013
8580686 Silicidation and/or germanidation on SiGe or Ge by cosputtering Ni and Ge and using an intralayer for thermal stability Nov. 12, 2013
8575652 Semiconductor device and manufacturing method thereof Nov. 5, 2013
8564018 Relaxed silicon germanium substrate with low defect density Oct. 22, 2013
8557670 SOI lateral bipolar junction transistor having a wide band gap emitter contact Oct. 15, 2013
8558282 Germanium lateral bipolar junction transistor Oct. 15, 2013
8536621 Quantum-well-based semiconductor devices Sep. 17, 2013
8507913 Method of bonding wafers Aug. 13, 2013
8502301 Semiconductor device and method for fabricating the same Aug. 6, 2013
8502284 Semiconductor device and method of manufacturing semiconductor device Aug. 6, 2013
8501141 Method for producing group III nitride semiconductor Aug. 6, 2013
8476716 Band edge engineered Vt offset device Jul. 2, 2013
8471307 In-situ carbon doped e-SiGeCB stack for MOS transistor Jun. 25, 2013
8471366 Nitride semiconductor substrate Jun. 25, 2013
8466450 Semiconductor device and fabrication method thereof Jun. 18, 2013
8461666 Gallium nitride-based semiconductor device and method for manufacturing the same Jun. 11, 2013
8461625 Carrier mobility enhanced channel devices and method of manufacture Jun. 11, 2013
8455881 Ge quantum dots for dislocation engineering of III-N on silicon Jun. 4, 2013
8421190 Group III nitride semiconductor substrate and manufacturing method thereof Apr. 16, 2013
8421191 Monolayer dopant embedded stressor for advanced CMOS Apr. 16, 2013
8362575 Controlling the shape of source/drain regions in FinFETs Jan. 29, 2013
8354695 Tunnel field-effect transistor with narrow band-gap channel and strong gate coupling Jan. 15, 2013
8354344 Methods for forming metal-germanide layers and devices obtained thereby Jan. 15, 2013
8344455 Semiconductor device and fabrication method for the same Jan. 1, 2013
8338261 Semiconductor device including field effect transistor and method of forming the same Dec. 25, 2012
8334561 Nonvolatile semiconductor memory device and method of manufacturing the same Dec. 18, 2012
RE43840 Silicon carbide semiconductor device Dec. 4, 2012
8304810 Semiconductor device and semiconductor substrate having selectively etched portions filled with silicon germanium Nov. 6, 2012
8304859 Optical interconnection device Nov. 6, 2012
8294222 Band edge engineered Vt offset device Oct. 23, 2012
8288825 Formation of raised source/drain structures in NFET with embedded SiGe in PFET Oct. 16, 2012
8288758 SOI SiGe-base lateral bipolar junction transistor Oct. 16, 2012
8278686 Structure and method for forming planar gate field effect transistor with low resistance channel region Oct. 2, 2012
8269256 Semiconductor device and manufacturing method thereof Sep. 18, 2012
8258543 Quantum-well-based semiconductor devices Sep. 4, 2012
8231726 Semiconductor light emitting element, group III nitride semiconductor substrate and method for manufacturing such group III nitride semiconductor substrate Jul. 31, 2012
8232581 Method for manufacturing an III-V engineered substrate and the III-V engineered substrate thereof Jul. 31, 2012
8222657 Light emitting apparatus Jul. 17, 2012
8217379 Arsenic-containing variable resistance materials Jul. 10, 2012
8207523 Metal oxide semiconductor field effect transistor with strained source/drain extension layer Jun. 26, 2012
8178443 Hardmask materials May. 15, 2012
8154051 MOS transistor with in-channel and laterally positioned stressors Apr. 10, 2012
8154082 Semiconductor device and manufacturing method thereof Apr. 10, 2012
8154084 Performance enhancement in PMOS and NMOS transistors on the basis of silicon/carbon material Apr. 10, 2012

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