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Class Information
Number: 257/615
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Including semiconductor material other than silicon or gallium arsenide (gaas) (e.g., pb x sn 1-x te) > Group iii-v compound (e.g., inp)
Description: Subject matter wherein the semiconducting material other than silicon or gallium arsenide is a compound of the periodic table group III-V (e.g., InP).
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7456445 |
Group III nitride semiconductor light emitting device |
Nov. 25, 2008 |
| 7439609 |
Doping of gallium nitride by solid source diffusion and resulting gallium nitride structures |
Oct. 21, 2008 |
| 7436045 |
Gallium nitride-based semiconductor device |
Oct. 14, 2008 |
| 7429747 |
Sb-based CMOS devices |
Sep. 30, 2008 |
| 7420261 |
Bulk nitride mono-crystal including substrate for epitaxy |
Sep. 2, 2008 |
| 7405096 |
Manufacturing method of nitride semiconductor device and nitride semiconductor device |
Jul. 29, 2008 |
| 7394114 |
Semiconductor device and manufacturing method therefor |
Jul. 1, 2008 |
| 7364929 |
Nitride semiconductor based light-emitting device and manufacturing method thereof |
Apr. 29, 2008 |
| 7348200 |
Method of growing non-polar a-plane gallium nitride |
Mar. 25, 2008 |
| 7339255 |
Semiconductor device having bidirectionally inclined toward <1-100> and <11-20> relative to {0001} crystal planes |
Mar. 4, 2008 |
| 7312472 |
Compound semiconductor element based on Group III element nitride |
Dec. 25, 2007 |
| 7304325 |
Group III nitride compound semiconductor light-emitting device |
Dec. 4, 2007 |
| 7288830 |
III-V nitride semiconductor substrate and its production method |
Oct. 30, 2007 |
| 7276779 |
III-V group nitride system semiconductor substrate |
Oct. 2, 2007 |
| 7271404 |
Group III-V nitride-based semiconductor substrate and method of making same |
Sep. 18, 2007 |
| 7253499 |
III-V group nitride system semiconductor self-standing substrate, method of making the same and III-V group nitride system semiconductor wafer |
Aug. 7, 2007 |
| 7247889 |
III-nitride material structures including silicon substrates |
Jul. 24, 2007 |
| 7242034 |
Method for fabricating a component having an electrical contact region, and component having an electrical contact region |
Jul. 10, 2007 |
| 7242041 |
Field-effect transistors with weakly coupled layered inorganic semiconductors |
Jul. 10, 2007 |
| 7235819 |
Semiconductor device having group III nitride buffer layer and growth layers |
Jun. 26, 2007 |
| 7221037 |
Method of manufacturing group III nitride substrate and semiconductor device |
May. 22, 2007 |
| 7198971 |
Nitride semiconductor thin film having fewer defects and method of growing the same |
Apr. 3, 2007 |
| 7196399 |
Epitaxially grown nitride-based compound semiconductor crystal substrate structure with low dislocation density |
Mar. 27, 2007 |
| 7190047 |
Transistors and methods for making the same |
Mar. 13, 2007 |
| 7176479 |
Nitride compound semiconductor element |
Feb. 13, 2007 |
| 7154131 |
Nitride semiconductor substrate and method of producing same |
Dec. 26, 2006 |
| 7154163 |
Epitaxial structure of gallium nitride series semiconductor device utilizing two buffer layers |
Dec. 26, 2006 |
| 7135710 |
Semiconductor light-emitting device |
Nov. 14, 2006 |
| 7132730 |
Bulk nitride mono-crystal including substrate for epitaxy |
Nov. 7, 2006 |
| 7129521 |
Semiconductor device and manufacture method thereof |
Oct. 31, 2006 |
| 7122734 |
Isoelectronic surfactant suppression of threading dislocations in metamorphic epitaxial layers |
Oct. 17, 2006 |
| 7053375 |
Scintillator including a group III nitride compound semiconductor and a scintillation counter including a scintillator including a group III nitride compound semiconductor |
May. 30, 2006 |
| 7037817 |
Semiconductor device and method for fabricating the same |
May. 2, 2006 |
| 7038250 |
Semiconductor device suited for a high frequency amplifier |
May. 2, 2006 |
| 7026669 |
Lateral channel transistor |
Apr. 11, 2006 |
| 7015565 |
Gallium nitride type semiconductor laser device |
Mar. 21, 2006 |
| 7015515 |
Group III nitride compound semiconductor device having a superlattice structure |
Mar. 21, 2006 |
| 7012318 |
Oxygen-doped n-type gallium nitride freestanding single crystal substrate |
Mar. 14, 2006 |
| 7002184 |
Light-emitting device comprising a gallum-nitride-group compound-semiconductor |
Feb. 21, 2006 |
| 6998690 |
Gallium nitride based III-V group compound semiconductor device and method of producing the same |
Feb. 14, 2006 |
| 6995454 |
Semiconductor optical integrated device having a light emitting portion, a modulation section and a separation portion |
Feb. 7, 2006 |
| 6995427 |
Semiconductor structure for providing strained crystalline layer on insulator and method for fabricating same |
Feb. 7, 2006 |
| 6956245 |
Group III nitride compound semiconductor light-emitting element |
Oct. 18, 2005 |
| 6956250 |
Gallium nitride materials including thermally conductive regions |
Oct. 18, 2005 |
| 6943381 |
III-nitride light-emitting devices with improved high-current efficiency |
Sep. 13, 2005 |
| 6936868 |
Sequential mesa avalanche photodiode capable of realizing high sensitization and method of manufacturing the same |
Aug. 30, 2005 |
| 6936863 |
Boron phosphide-based semiconductor light-emitting device, production method thereof and light-emitting diode |
Aug. 30, 2005 |
| 6936860 |
Light emitting diode having an insulating substrate |
Aug. 30, 2005 |
| 6936859 |
Light-emitting semiconductor device using group III nitride compound |
Aug. 30, 2005 |
| 6933545 |
Hetero-bipolar transistor having the base interconnection provided on the normal mesa surface of the collector mesa |
Aug. 23, 2005 |
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