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Class Information
Number: 257/615
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Including semiconductor material other than silicon or gallium arsenide (gaas) (e.g., pb x sn 1-x te) > Group iii-v compound (e.g., inp)
Description: Subject matter wherein the semiconducting material other than silicon or gallium arsenide is a compound of the periodic table group III-V (e.g., InP).










Patents under this class:
1 2 3 4 5 6 7 8 9 10 11

Patent Number Title Of Patent Date Issued
8709859 Method for fabricating solar cell Apr. 29, 2014
8709923 Method of manufacturing III-nitride crystal Apr. 29, 2014
8710543 Cascode circuit device with improved reverse recovery characteristic Apr. 29, 2014
8704314 Mechanical memory transistor Apr. 22, 2014
8704340 Stacked single crystal compound semiconductor substrates Apr. 22, 2014
8686562 Refractory metal nitride capped electrical contact and method for frabricating same Apr. 1, 2014
8679248 GaN whiskers and methods of growing them from solution Mar. 25, 2014
8680581 Method for producing group III nitride semiconductor and template substrate Mar. 25, 2014
8679942 Strain engineered composite semiconductor substrates and methods of forming same Mar. 25, 2014
8674405 Gallium--nitride-on-diamond wafers and devices, and methods of manufacture Mar. 18, 2014
8674398 Group III nitride semiconductor light emitting device and production method thereof, and lamp Mar. 18, 2014
8663389 Method and apparatus for crystal growth using a membrane-assisted semi-closed reactor Mar. 4, 2014
8664688 Nitride semiconductor light-emitting chip, method of manufacture thereof, and semiconductor optical device Mar. 4, 2014
8658449 Semiconductor layer, method of manufacturing the same, laser diode, and method of manufacturing the same Feb. 25, 2014
8652959 n- and p-channel field effect transistors with single quantum well for complementary circuits Feb. 18, 2014
8647901 Method for forming a nitride semiconductor layer and method for separating the nitride semiconductor layer from the substrate Feb. 11, 2014
8643024 In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In)N Feb. 4, 2014
8637960 Nitride semiconductor substrate Jan. 28, 2014
8633569 AlN inter-layers in III-N material grown on REO/silicon substrate Jan. 21, 2014
8629531 Structure and method to reduce wafer warp for gallium nitride on silicon wafer Jan. 14, 2014
8624356 Group III nitride semiconductor substrate production method, and group III nitride semiconductor substrate Jan. 7, 2014
8617945 Stacking fault and twin blocking barrier for integrating III-V on Si Dec. 31, 2013
8617968 Strained silicon and strained silicon germanium on insulator metal oxide semiconductor field effect transistors (MOSFETs) Dec. 31, 2013
8618577 Compound semiconductor device and manufacturing method thereof Dec. 31, 2013
8618578 Field effect transistor Dec. 31, 2013
8613802 Nitride semiconductor crystal manufacturing apparatus, nitride semiconductor crystal manufacturing method, and nitride semiconductor crystal Dec. 24, 2013
8609461 Semiconductor epitaxy on diamond for heat spreading applications Dec. 17, 2013
8609517 MOCVD for growing III-V compound semiconductors on silicon substrates Dec. 17, 2013
8610118 Flexible display panel having curvature that matches curved surface of vehicle part Dec. 17, 2013
8598685 GaN single crystal substrate and method of manufacturing thereof and GaN-based semiconductor device and method of manufacturing thereof Dec. 3, 2013
8598605 Semiconductor light-emitting device Dec. 3, 2013
8598042 Device manufacturing and cleaning method Dec. 3, 2013
8597967 Method and system for dicing substrates containing gallium and nitrogen material Dec. 3, 2013
8591652 Semi-conductor substrate and method of masking layer for producing a free-standing semi-conductor substrate by means of hydride-gas phase epitaxy Nov. 26, 2013
8592289 Epitaxial wafer, method for manufacturing gallium nitride semiconductor device, gallium nitride semiconductor device and gallium oxide wafer Nov. 26, 2013
8592298 Fabrication of floating guard rings using selective regrowth Nov. 26, 2013
8592316 Nitride semiconductor substrate, production method therefor and nitride semiconductor device Nov. 26, 2013
8592802 (Al, In, Ga, B)N device structures on a patterned substrate Nov. 26, 2013
8592948 Substrate, epitaxial layer provided substrate, method for producing substrate, and method for producing epitaxial layer provided substrate Nov. 26, 2013
8586433 Compound semiconductor device and manufacturing method thereof Nov. 19, 2013
8581335 Compound semiconductor device and manufacturing method thereof Nov. 12, 2013
8581367 Semiconductor device having electrode film in which film thickness of periphery is thinner than film thickness of center Nov. 12, 2013
8569796 Semiconductor wafer and semiconductor device having multilayered nitride semiconductor layer Oct. 29, 2013
RE44538 Indium gallium nitride channel high electron mobility transistors, and method of making the same Oct. 15, 2013
8552464 CMOS-compatible movable microstructure based devices Oct. 8, 2013
8552531 Nitride-based compound semiconductor and nitride-based compound semiconductor device Oct. 8, 2013
8536674 Integrated circuit and method of fabricating same Sep. 17, 2013
8536622 Semiconductor device and power supply apparatus Sep. 17, 2013
8536621 Quantum-well-based semiconductor devices Sep. 17, 2013
8536030 Semipolar semiconductor crystal and method for manufacturing the same Sep. 17, 2013

1 2 3 4 5 6 7 8 9 10 11










 
 
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